公开(公告)号：US20090246652A1

公开(公告)日：2009-10-01

申请号：US12479619

申请日：2009-06-05

Applicant: Pin-Chen CHEN ,  Hui-Lung KUO ,  Chih-Ho CHIU ,  Liang-Bin YU

Inventor： Pin-Chen CHEN ,  Hui-Lung KUO ,  Chih-Ho CHIU ,  Liang-Bin YU

IPC: G03F1/00

CPC classification number: G02B5/201

Abstract: A color filter having a bi-layer metal grating is formed by nanoimprint lithography. Nanoimprint lithography, a low cost technology, includes two alternatives, i.e., hotembossing nanoimprint lithography and UV-curable nanoimprint lithography. Manufacture steps comprises providing a substrate with a polymer material layer disposed thereon. A plurality of lands and grooves are formed in the polymer material layer, and a first metal layer and a second metal layer are disposed on the surfaces of the lands and grooves, respectively. Finally, a color filter having a bi-layer metal grating is obtained.

Abstract translation: 具有双层金属光栅的滤色器通过纳米压印光刻形成。 纳米压印光刻技术是一种低成本技术，包括两个替代方案，即热压纳米压印光刻和紫外线固化纳米压印光刻。 制造步骤包括提供其上设置有聚合物材料层的基底。 在聚合物材料层中形成多个焊盘和沟槽，并且第一金属层和第二金属层分别设置在焊盘和焊盘的表面上。 最后，获得具有双层金属光栅的滤色器。

公开(公告)号：US20090135353A1

公开(公告)日：2009-05-28

申请号：US12365471

申请日：2009-02-04

Applicant: Chi-Nan Liao ,  Liang-Bin Yu ,  Yuh-Huah Wang

Inventor： Chi-Nan Liao ,  Liang-Bin Yu ,  Yuh-Huah Wang

IPC: G02F1/1335

CPC classification number: G02F1/1395 ,  G02F1/133512 ,  G02F2001/134381 ,  G02F2201/122

Abstract: A pixel structure of a color filtering array substrate includes a color filtering layer, a black matrix layer, and an electrode layer. The black matrix layer surrounds the color filtering layer. The electrode layer covers the color filtering layer and the black matrix layer. Besides, the electrode layer has at least one opening therein, and the opening is located above the black matrix layer.

Abstract translation: 彩色滤光阵列基板的像素结构包括滤色层，黑矩阵层和电极层。 黑矩阵层围绕着彩色滤光层。 电极层覆盖滤色层和黑矩阵层。 此外，电极层在其中具有至少一个开口，并且开口位于黑矩阵层上方。

公开(公告)号：US20090073353A1

公开(公告)日：2009-03-19

申请号：US11854595

申请日：2007-09-13

Applicant: Liang-Bin Yu ,  Yi-Han Chao

Inventor： Liang-Bin Yu ,  Yi-Han Chao

IPC: G02F1/1335

CPC classification number: G02F1/13362

Abstract: An optical film and a liquid crystal display are provided. The liquid crystal display includes a twisted nematic type liquid crystal panel and a backlight module. The liquid crystal panel includes a bottom polarizer, a liquid crystal cell, and a top polarizer. The liquid crystal cell is placed between the bottom polarizer and the top polarizer. The backlight includes a reflective polarizer and a half-wave plate, and the half-wave plate is placed on the reflective polarizer. The transmission axis of the bottom polarizer and the principle axis of the bottom polarizer differ a first angle. The transmission axis of the bottom polarizer and the reflective polarizer differ a second angle. The first angle is half of the second angle.

Abstract translation: 提供了一种光学膜和液晶显示器。 液晶显示器包括扭转向列型液晶面板和背光模块。 液晶面板包括底部偏振器，液晶单元和顶部偏振器。 液晶单元被放置在底部偏振器和顶部偏振器之间。 背光源包括反射偏振器和半波片，并且半波片被放置在反射偏振器上。 底部偏振器的透射轴和底部偏振器的主轴不同于第一角度。 底部偏振器和反射偏振器的透射轴相差第二个角度。 第一个角度是第二个角度的一半。

公开(公告)号：US07432557B1

公开(公告)日：2008-10-07

申请号：US10755344

申请日：2004-01-13

Applicant: Matthew S. Buynoski ,  Judy Xilin An ,  Bin Yu

Inventor： Matthew S. Buynoski ,  Judy Xilin An ,  Bin Yu

IPC: H01L23/62

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming one or more FinFET devices includes forming a source region and a drain region in an oxide layer, where the oxide layer is disposed on a substrate, and etching the oxide layer between the source region and the drain region to form a group of oxide walls and channels for a first device. The method further includes depositing a connector material over the oxide walls and channels for the first device, forming a gate mask for the first device, removing the connector material from the channels, depositing channel material in the channels for the first device, forming a gate dielectric for first device over the channels, depositing a gate material over the gate dielectric for the first device, and patterning and etching the gate material to form at least one gate electrode for the first device.

Abstract translation: 半导体器件包括源极区域，漏极区域和形成在源极区域和漏极区域之间的沟道组。 通道组中的至少一个通道通过氧化物结构与通道组中的另一个通道分离。 半导体器件还包括至少一个形成在该组沟道的至少一部分上的栅极。

公开(公告)号：US20080197025A1

公开(公告)日：2008-08-21

申请号：US11090944

申请日：2005-03-25

Applicant: Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

Inventor： Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

IPC: G01N27/406

CPC classification number: C12Q1/6825 ,  C12Q2600/156 ,  G01N27/333 ,  C12Q2565/518

Abstract: Ionic interactions are monitored to detect hybridization. The measurement may be done measuring the potential change in the solution with the ion sensitive electrode (which may be the conducting polymer (e.g., polyaniline) itself), without applying any external energy during the binding. The double helix formation during the complimentary hybridization makes this electrode act as an ion selective electrode—the nucleotide hydrogen bonding is specific and thus monitoring the ionic phosphate group addition becomes selective. Polyaniline on the surface of nylon film forms a positively charged polymer film. Thiol linkage can be utilized for polyaniline modification and thiol-modified single strand oligonucleotide chains can be added to polyaniline. The sensitivity is because the double helix formation during the complimentary hybridization makes this electrode act as an ion selective electrode as the nucleotide hydrogen bonding is specific and thus monitoring the ionic phosphate group addition becomes selective.

Abstract translation: 监测离子相互作用以检测杂交。 测量可以通过离子敏感电极（其可以是导电聚合物（例如聚苯胺）本身））测量溶液中的潜在变化，而在结合期间不施加任何外部能量。 在互补杂交期间的双螺旋形成使得该电极用作离子选择性电极 - 核苷酸氢键是特异性的，因此监测离子性磷酸酯基添加成为选择性的。 尼龙膜表面的聚苯胺形成带正电的聚合物膜。 硫醇连接可用于聚苯胺改性，硫醇改性的单链寡核苷酸链可以加入到聚苯胺中。 敏感性是因为互补杂交期间的双螺旋形成使得该电极作为离子选择性电极，因为核苷酸氢键是特异性的，因此监测离子性磷酸酯基添加成为选择性的。

公开(公告)号：US20080094331A1

公开(公告)日：2008-04-24

申请号：US11625348

申请日：2007-01-22

Applicant: Feng-Shou Lin ,  Yu-Yuan Chang ,  Kuo-Liang Shen ,  Liang-Bin Yu

Inventor： Feng-Shou Lin ,  Yu-Yuan Chang ,  Kuo-Liang Shen ,  Liang-Bin Yu

IPC: G09G3/36

CPC classification number: G09G3/3614 ,  G09G3/3655 ,  G09G2310/0235 ,  G09G2310/06 ,  G09G2320/0242

Abstract: A driving method for reducing the color shift suitable for driving a display panel is disclosed. The display panel includes at least one scan line, at least one data line, and at least one pixel unit electrically connected to the scan line and the data line. The driving method includes the following steps. First, turn on the pixel unit by the scan line during a frame period. Transmit a frame signal to the pixel unit by the data line during the frame period as the pixel unit is turned on. Turn on the pixel unit by the scan line between the present frame period and the next frame period. Transmit a revising signal to the pixel unit by the data line between the present frame period and the next frame period as the pixel unit is turned on, so as to reduce the color shift of the pixel unit.

Abstract translation: 公开了一种用于减少适于驱动显示面板的色移的驱动方法。 显示面板包括至少一条扫描线，至少一条数据线，以及电连接到扫描线和数据线的至少一个像素单元。 驱动方法包括以下步骤。 首先，在帧周期期间通过扫描线打开像素单元。 在像素单元接通时，在帧周期期间通过数据线将帧信号发送到像素单元。 在当前帧周期和下一帧周期之间通过扫描线打开像素单元。 在像素单元导通时，通过当前帧周期与下一帧周期之间的数据线将修正信号发送到像素单元，以减少像素单元的色移。

公开(公告)号：US20080054431A1

公开(公告)日：2008-03-06

申请号：US11513765

申请日：2006-08-31

Applicant: Tingqing Wang ,  Moon Wang ,  Bin Yu

Inventor： Tingqing Wang ,  Moon Wang ,  Bin Yu

IPC: H01L23/12 ,  H01L21/58

CPC classification number: H01L21/565 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2225/06568 ,  H01L2924/01079 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A stacked chip semiconductor package may be formed in a “package in package” arrangement. The internal package may include two substrates. One substrate may have two dice stacked on each of two opposed sides and the other substrate may have two dice stacked on it as well. The two stacked substrates may be separated by molding compound and then electrically coupled to a third substrate. Thereafter, the entire assembly may be encapsulated.

Abstract translation: 堆叠式芯片半导体封装可以形成为“封装封装”布置。 内部封装可以包括两个基板。 一个基底可以具有两个堆叠在两个相对侧中的每一个上的骰子，另一个基底也可以在其上堆叠两个骰子。 两个堆叠的基板可以通过模制化合物分离，然后电耦合到第三基板。 此后，整个组件可以被封装。

公开(公告)号：US07288776B2

公开(公告)日：2007-10-30

申请号：US10874236

申请日：2004-06-24

Applicant: Chih Kung Lee ,  Liang Bin Yu ,  Jiunn Woei Liaw ,  Ding Zheng Lin ,  Jyi Tyan Yeh ,  Yu Tsung Chiu ,  Chun Ti Chen ,  Chyan Chi Wu ,  Chau Shioung Yeh ,  You Chia Chang ,  Kuo Tung Huang ,  Yi Chun Chen ,  Yeong Feng Wang

Inventor： Chih Kung Lee ,  Liang Bin Yu ,  Jiunn Woei Liaw ,  Ding Zheng Lin ,  Jyi Tyan Yeh ,  Yu Tsung Chiu ,  Chun Ti Chen ,  Chyan Chi Wu ,  Chau Shioung Yeh ,  You Chia Chang ,  Kuo Tung Huang ,  Yi Chun Chen ,  Yeong Feng Wang

IPC: G21G4/00

CPC classification number: G03F7/70383 ,  G01Q60/22 ,  G01Q80/00 ,  G02B27/58 ,  G11B7/1387

Abstract: The present invention provides an optical head with a single or multiple sub-wavelength light beams, which can be used in arenas such as photolithography, optical storage, optical microscopy, to name a few. The present invention includes a transparent substrate, a thin film, and a surface structure with sub-wavelength surface profile. The incident light transmits through the transparent substrate, forms a surface plasma wave along the sub-wavelength aperture located within the thin film, and finally re-emits through spatial coupling with the sub-wavelength profile of the surface structure. As the coupled re-emitting light beam or light beams can maintain the waist less than that of the diffraction limit for a few micrometers out of the surface with sub-wavelength profile in many cases, this invention can have applications ranging from micro or nano manufacturing, metrology, and manipulation by using light beams with waist smaller than the diffraction limit.

Abstract translation: 本发明提供了具有单个或多个亚波长光束的光学头，其可以用于诸如光刻，光学存储，光学显微镜等领域。 本发明包括透明基板，薄膜和具有亚波长表面轮廓的表面结构。 入射光透过透明基板，沿着位于薄膜内的亚波长孔径形成表面等离子体波，最后通过与表面结构的亚波长分布的空间耦合重新发射。 由于耦合的再发射光束或光束在许多情况下可以使具有亚波长分布的表面中几微米的衍射极限的腰部能够保持较小的范围，所以本发明可以具有从微或纳米制造的应用 ，计量和使用腰围小于衍射极限的光束进行操纵。

公开(公告)号：US07235436B1

公开(公告)日：2007-06-26

申请号：US10614051

申请日：2003-07-08

Applicant: Ming-Ren Lin ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

Inventor： Ming-Ren Lin ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC: H01L21/84

CPC classification number: H01L21/845 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin structure of the first area and the second area, and annealing the first area and the second area to dope the fin structures.

Abstract translation: 在FinFET器件中掺杂鳍结构的方法包括在第一区域和第二区域的鳍结构上形成第一玻璃层。 该方法还包括从第二区域去除第一玻璃层，在第一区域和第二区域的翅片结构上形成第二玻璃层，并退火第一区域和第二区域以掺杂翅片结构。

公开(公告)号：US07211489B1

公开(公告)日：2007-05-01

申请号：US10934378

申请日：2004-09-07

Applicant: Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

Inventor： Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

IPC: H01L21/336

CPC classification number: H01L21/268 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659

Abstract: The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.

Abstract translation: 本发明能够制造改进的高可靠性，高密度的半导体器件。 本发明通过减小诸如栅极沟道长度的半导体器件结构的尺寸来提供高密度半导体器件。 通过使用在器件通道中形成的高度局部化的注入区来防止短沟道效应。 通过倾斜预非晶化植入和晕圈植入区域的激光热退火形成高度局部化的注入区域。