公开(公告)号：US10177218B2

公开(公告)日：2019-01-08

申请号：US15365335

申请日：2016-11-30

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frédéric Lanois ,  Alexei Ankoudinov ,  Vladimir Rodov

IPC: H02M3/158 ,  H01L29/06 ,  H01L29/861 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L27/06 ,  H01L27/092

Abstract: A diode includes upper and lower electrodes and first and second N-type doped semiconductor substrate portions connected to the lower electrode. A first vertical transistor and a second transistor are formed in the first portion and series-connected between the electrodes. The gate of the first transistor is N-type doped and coupled to the upper electrode. The second transistor has a P channel and has a P-type doped gate. First and second doped areas of the second conductivity type are located in the second portion and are separated by a substrate portion topped with another N-type doped gate. The first doped area is coupled to the gate of the second transistor. The second doped area and the other gate are coupled to the upper electrode.

公开(公告)号：US20180351210A1

公开(公告)日：2018-12-06

申请号：US16053223

申请日：2018-08-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien Ladroue ,  Mohamed Boufnichel

IPC: H01M10/0585 ,  H01M4/04 ,  H01M6/40 ,  H01M10/04

CPC classification number: H01M10/0585 ,  H01M4/0404 ,  H01M4/0407 ,  H01M6/40 ,  H01M10/0436 ,  H01M2220/30

Abstract: A self-supporting thin-film battery is manufacture by forming on the upper surface of a support substrate a vertical active stack having as a lower layer a metal layer having formed therein a first contact terminal of a first polarity of the battery and having formed therein as an upper layer a metal layer having a second contact terminal of a second polarity of the battery. A support film is then bonded to an upper surface of the upper layer. The lower layer is the separated from the substrate by projecting a laser beam through the substrate from a lower surface thereof to impinge on the lower layer.

公开(公告)号：US10069001B2

公开(公告)日：2018-09-04

申请号：US15243552

申请日：2016-08-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard

IPC: H01L29/747 ,  H01L29/74 ,  H01L27/02 ,  H01L29/87 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/0248 ,  H01L29/41716 ,  H01L29/42308 ,  H01L29/7404 ,  H01L29/7416 ,  H01L29/747 ,  H01L29/87

Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.

公开(公告)号：US20180233769A1

公开(公告)日：2018-08-16

申请号：US15692045

申请日：2017-08-31

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien Ladroue ,  Fabien Pierre

IPC: H01M10/0525 ,  H01M4/13 ,  H01M4/58 ,  H01M4/136 ,  H01M4/1391 ,  H01M10/0567

CPC classification number: H01M10/0525 ,  H01M4/13 ,  H01M4/136 ,  H01M4/1391 ,  H01M4/58 ,  H01M10/0562 ,  H01M10/0567 ,  H01M2010/0495

Abstract: In manufacturing a lithium battery, a plasma deposition of a layer of LiPON is made on a structure that includes an anode contact zone and a cathode contact zone. Before making the deposition of layer of LiPON, a conductive portion is deposited to short the anode contact zone to the cathode contact zone. After the deposition of the layer of LiPON in completed, the conductive portion is cut to sever the short between the anode and cathode contact zones.

公开(公告)号：US20180205137A1

公开(公告)日：2018-07-19

申请号：US15691285

申请日：2017-08-30

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Benoit Bonnet

IPC: H01Q1/24 ,  H01Q9/04 ,  H01Q5/30

CPC classification number: H01Q1/242 ,  H01Q1/243 ,  H01Q1/48 ,  H01Q5/30 ,  H01Q5/328 ,  H01Q9/0421 ,  H01Q9/42

Abstract: The invention relates to an antenna comprising: an elongate conducting band; an antenna socket; a connection to earth; at least one first capacitive element of adjustable capacitance; and at least one first inductive element in series with the first capacitive element.

公开(公告)号：US20180190562A1

公开(公告)日：2018-07-05

申请号：US15689828

申请日：2017-08-29

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics (Grenoble 2) SAS

Inventor： Laurent Figuiere ,  Gaetan Lobascio ,  Alexandre Mas

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/31 ,  H01L21/304 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L23/367 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3178 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/3675 ,  H01L23/3733 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2741 ,  H01L2224/27848 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/40227 ,  H01L2224/40499 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/83365 ,  H01L2224/84365 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/07811

Abstract: An electronic device includes a support plate having a mounting face. An electronic chip has a front face mounted on the mounting face of the support plate. A rear face of the electronic chip located opposite to the front face is provided with rear grooves that define, between the grooves, rear zones. A rear layer made of a heat-conducting material is spread over the rear face of the electronic chip so as to at least partly cover the rear zones and at least partially fill the rear grooves.

公开(公告)号：US20180152116A1

公开(公告)日：2018-05-31

申请号：US15877854

申请日：2018-01-23

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Ghafour BENABDELAZIZ ,  Laurent GONTHIER

IPC: H02M7/06 ,  H02M1/08 ,  H02M1/32 ,  H02M1/42 ,  H02M1/36

CPC classification number: H02M7/06 ,  H02M1/08 ,  H02M1/32 ,  H02M1/36 ,  H02M1/42 ,  H02M7/1623

Abstract: A rectifying circuit including: between a first terminal of application of an AC voltage and a first rectified voltage delivery terminal, at least one first diode; and between a second terminal of application of the AC voltage and a second rectified voltage delivery terminal, at least one first anode-gate thyristor, the anode of the first thyristor being connected to the second rectified voltage delivery terminal; and at least one first stage for controlling the first thyristor, including: a first transistor coupling the thyristor gate to a terminal of delivery of a potential which is negative with respect to the potential of the second rectified voltage delivery terminal; and a second transistor connecting a control terminal of the first transistor to a terminal for delivering a potential which is positive with respect to the potential of the second rectified voltage delivery terminal, the anode of the first thyristor being connected to the common potential of voltages defined by said positive and negative potentials.

公开(公告)号：US20180108766A1

公开(公告)日：2018-04-19

申请号：US15834472

申请日：2017-12-07

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard

IPC: H01L29/747 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/747 ,  H01L29/408 ,  H01L29/66386

Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.

公开(公告)号：US20180068800A1

公开(公告)日：2018-03-08

申请号：US15812438

申请日：2017-11-14

Applicant: STMicroelectronics (Tours) SAS

Inventor： Sylvain CHARLEY

IPC: H01G7/00 ,  H03H11/48

CPC classification number: H01G7/00 ,  H03H11/481 ,  H03H11/483

Abstract: A circuit for controlling a capacitor having a capacitance adjustable by biasing, including an amplifier for delivering a D.C. bias voltage, having a feedback slowed down by a resistive and capacitive cell.

公开(公告)号：US09820056B2

公开(公告)日：2017-11-14

申请号：US14849964

申请日：2015-09-10

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Sophie Ngo ,  Dominique Certon ,  Daniel Alquier

IPC: H03H9/54 ,  H04R19/00 ,  B06B1/02 ,  H03H9/02 ,  H03H9/48

CPC classification number: H04R19/00 ,  B06B1/0292 ,  H03H9/02228

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.