Anisotropic wetting behavior on one-dimensional patterned surfaces for applications to microfluidic devices
    231.
    发明授权
    Anisotropic wetting behavior on one-dimensional patterned surfaces for applications to microfluidic devices 有权
    用于微流体装置的一维图案化表面上的各向异性润湿行为

    公开(公告)号:US08377390B1

    公开(公告)日:2013-02-19

    申请号:US12475371

    申请日:2009-05-29

    Abstract: In accordance with the invention, there are surfaces exhibiting anisotropic wetting, microfluidic devices and microreactors including the surfaces and methods of controlling anisotropic wetting behavior of the surfaces. The exemplary surface can include a substrate and a plurality of rectangular shaped structures arranged to form a macroscopic pattern over the substrate, wherein the plurality of rectangular shaped structures delineate a top surface of the rectangular structures from a surface of the substrate, the rectangular shaped structures including substantially vertical walls having a height of about 100 nm to about 10 μm and wherein the shape of the macroscopic pattern, the height of the substantially vertical walls, and a surface chemistry of the top surface controls anisotropic wetting at the top surface of the rectangular structures.

    Abstract translation: 根据本发明,存在表现出各向异性润湿,微流体装置和微反应器的表面,包括表面和控制表面各向异性润湿行为的方法。 示例性表面可以包括衬底和布置成在衬底上形成宏观图案的多个矩形结构,其中多个矩形结构从衬底的表面描绘矩形结构的顶表面,矩形结构 包括具有约100nm至约10μm的高度的基本垂直的壁,并且其中宏观图案的形状,基本上垂直的壁的高度以及顶部表面的表面化学性能控制矩形顶部表面处的各向异性润湿 结构。

    Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
    232.
    发明授权
    Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays 有权
    三维超声波换能器阵列,制造超声波换能器阵列的方法以及包括超声换能器阵列的装置

    公开(公告)号:US08372680B2

    公开(公告)日:2013-02-12

    申请号:US11685199

    申请日:2007-03-12

    Applicant: Jingkuang Chen

    Inventor: Jingkuang Chen

    Abstract: Medical imaging devices may comprise an array of ultrasonic transducer elements. Each transducer element may comprise a substrate having a doped surface creating a highly conducting surface layer, a layer of thermal oxide on the substrate, a layer of silicon nitride on the layer of thermal oxide, a layer of silicon dioxide on the layer of silicon nitride, and a layer of conducting thin film on the layer of silicon dioxide. The layers of silicon dioxide and thermal oxide may sandwich the layer of silicon nitride, and the layer of conducting thin film may be separated from the layer of silicon nitride by the layer of silicon dioxide.

    Abstract translation: 医疗成像装置可以包括超声换能器元件阵列。 每个换能器元件可以包括具有掺杂表面的衬底,其产生高导电表面层,衬底上的热氧化物层,热氧化层上的氮化硅层,氮化硅层上的二氧化硅层 ,以及二氧化硅层上的导电薄膜层。 二氧化硅和热氧化物层可以夹持氮化硅层,并且导电薄膜层可以通过二氧化硅层与氮化硅层分离。

    Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers
    234.
    发明授权
    Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers 有权
    工程锗硅片上的无浆化学机械平面化(CMP)

    公开(公告)号:US08338301B1

    公开(公告)日:2012-12-25

    申请号:US12613161

    申请日:2009-11-05

    CPC classification number: H01L21/02024 H01L21/30625

    Abstract: Exemplary embodiments provide methods for planarizing a semiconductor surface. In embodiments, the disclosed planarizing methods can include a chemical mechanical planarization (CMP) process using a slurry-free solution that includes hydrogen peroxide (H2O2) but is free of particles such as oxide particles. A semiconductor surface (e.g., germanium) can then be planarized to provide a desirable surface roughness. In embodiments, high-quality Group III-V materials can be formed on the planarized semiconductor surface.

    Abstract translation: 示例性实施例提供了用于平坦化半导体表面的方法。 在实施例中,所公开的平面化方法可以包括使用包含过氧化氢(H 2 O 2)但不含诸如氧化物颗粒的颗粒的无浆液的化学机械平面化(CMP)工艺。 然后可以将半导体表面(例如,锗)平坦化以提供期望的表面粗糙度。 在实施例中,可以在平坦化的半导体表面上形成高质量的III-V族材料。

    Dual data rate flip-flop circuit
    237.
    发明授权
    Dual data rate flip-flop circuit 有权
    双数据率触发器电路

    公开(公告)号:US08324951B1

    公开(公告)日:2012-12-04

    申请号:US13082826

    申请日:2011-04-08

    CPC classification number: H03K3/0375

    Abstract: A dual data rate flip-flop circuit for reducing single event upset errors in the flip-flop circuit including two or more latch circuits connected in parallel. The latch circuits each have a clock input, data input, and latch circuit output. The dual data rate flip-flop circuit also includes a C-element, which has a plurality of inputs and a C-element output. The outputs of the latch circuits are provided to inputs of the C-element, and a keeper circuit is connected to the C-element output. An output buffer inverter connects to the C-element output and has an output corresponding to the dual data rate flip-flop circuit output.

    Abstract translation: 一种双数据率触发器电路,用于减少包括并联连接的两个或多个锁存电路的触发器电路中的单个事件不正常错误。 锁存电路各有一个时钟输入,数据输入和锁存电路输出。 双数据率触发器电路还包括具有多个输入和C元件输出的C元件。 锁存电路的输出被提供给C元件的输入,并且保持器电路连接到C元件输出。 输出缓冲器反相器连接到C元件输出,并且具有对应于双数据速率触发器电路输出的输出。

    Rapid generation of carbon filament structures of controlled geometries at low temperatures
    239.
    发明授权
    Rapid generation of carbon filament structures of controlled geometries at low temperatures 有权
    在低温下快速生成受控几何的碳丝结构

    公开(公告)号:US08298615B2

    公开(公告)日:2012-10-30

    申请号:US12355265

    申请日:2009-01-16

    Abstract: Exemplary embodiments provide methodologies for generating structures of filamentous carbon (or carbon filaments) with controlled geometries. In one exemplary embodiment of forming the carbon filament structure, a metal template can be exposed to a fuel rich gaseous mixture to form a carbon filament structure at an appropriate gas flow and/or at an appropriate temperature on the metal template. The metal template can have one or more metal surfaces with controlled geometries. Carbon filament structures can then be grown on the metal surfaces having corresponding geometries (or shapes) in the growth direction. The carbon filament structure can be two or three dimensional and can have high density. In various embodiments, the metal template can be removed to leave a self-supporting carbon filament structure.

    Abstract translation: 示例性实施例提供了用于产生具有受控几何形状的丝状碳(或碳丝)的结构的方法。 在形成碳丝结构的一个示例性实施方案中,可以将金属模板暴露于富燃料气体混合物,以在适当的气流和/或在金属模板上的合适温度下形成碳丝结构。 金属模板可以具有一个或多个受控几何形状的金属表面。 然后可以在生长方向上具有相应几何形状(或形状)的金属表面上生长碳丝结构。 碳丝结构可以是二维或三维,并且可以具有高密度。 在各种实施方案中,可以除去金属模板以留下自支撑碳丝结构。

    Magnetically susceptible particles and apparatuses for mixing the same
    240.
    发明授权
    Magnetically susceptible particles and apparatuses for mixing the same 有权
    易磁粒子及其混合装置

    公开(公告)号:US08283185B2

    公开(公告)日:2012-10-09

    申请号:US12447060

    申请日:2007-10-30

    CPC classification number: G01N33/54326 B03C1/288 B03C2201/18 B03C2201/22

    Abstract: The present invention includes a magnetically susceptible polymer component, a method of making the same, and apparatuses and systems for mixing, separating or localizing a magnetically susceptible polymer compound in a reaction. The magnetically susceptible polymer component includes a polymer and a magnetically susceptible particle of a predetermined size, which yields a component having a much-improved magnetic reactivity due to the increase in magnetic material by mass percentage. The apparatuses and systems of the present invention employ controllable magnetic fields distributable in perpendicular directions in order to precisely control the orientation, position and relative motion of any magnetically susceptible components within a reaction vessel.

    Abstract translation: 本发明包括磁敏感聚合物组分,其制备方法以及用于在反应中混合,分离或定位磁敏感性聚合物化合物的装置和系统。 磁敏感聚合物组分包括预定尺寸的聚合物和磁敏感颗粒,其由于磁性材料以质量百分比的增加而产生具有大大提高的磁反应性的组分。 本发明的装置和系统采用可分散在垂直方向上的可控磁场,以便精确地控制反应容器内的任何磁敏组件的取向,位置和相对运动。

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