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    Rate Enhanced Pulsed DC Sputtering System
    235.
    发明申请
    Rate Enhanced Pulsed DC Sputtering System 有权
    速率增强型脉冲直流溅射系统

    公开(公告)号：US20160314946A1

    公开(公告)日：2016-10-27

    申请号：US14697267

    申请日：2015-04-27

    申请人： Advanced Energy Industries, Inc.

    发明人： Douglas Pelleymounter

    IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35

    CPC分类号： H01J37/3476 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/3467 ,  H01J2237/2485 ,  H01J2237/327 ,  H01J2237/332

    摘要： A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.

    摘要翻译： 公开了一种脉冲直流溅射系统和方法。 该系统具有具有两个靶的等离子体室，两个磁控管和一个阳极，第一电源和第二电源。 第一电源耦合到第一磁控管和阳极，并且在阳极和第一磁控管之间的每个循环期间提供具有正电位和负电位的循环第一电源电压。 第二电源耦合到第二磁控管和阳极，并提供循环的第二电源电压。 控制器将同步并控制第一电源电压和第二电源电压以施加组合的阳极电压，并将第一磁控管电压与第二磁控管电压相位同步，其中施加到 阳极具有第一磁控管电压和第二磁控管电压之和的幅度的至少80％的量值。

    DC power source, and DC power source control method
    236.
    发明授权
    DC power source, and DC power source control method 有权
    直流电源和直流电源控制方式

    公开(公告)号：US09450519B2

    公开(公告)日：2016-09-20

    申请号：US14765702

    申请日：2013-12-26

    申请人： KYOSAN ELECTRIC MFG. CO., LTD.

    发明人： Itsuo Yuzurihara ,  Shinichi Kodama ,  Toshiyuki Adachi

    IPC分类号： H02M7/5387 ,  H02M3/158 ,  H05H1/46 ,  H02M1/36 ,  H02M3/155 ,  H02M1/00

    CPC分类号： H02M7/53871 ,  H01J37/32027 ,  H01J37/3444 ,  H02M1/36 ,  H02M3/155 ,  H02M3/1582 ,  H02M7/48 ,  H02M2001/007 ,  H05H1/46

    摘要： A DC power source to supply DC power to a plasma generator is configured as a simple and small-sized device that forms high voltage for generating a plasma discharge. A step of passing a short-circuit current for extremely short time through the voltage source step-down chopper provided in the DC power source and accumulating energy in a reactor is performed repeatedly more than once, so as to discharge the energy accumulated in the reactor to the output capacitance and raise the output voltage sequentially, thereby boosting the voltage up to the ignition set voltage. The short-circuit current is formed by a switching element of a boosting circuit provided in the DC power source. Boosting the voltage at the output terminal by accumulating and discharging the short-circuit current is repeated to raise the voltage at the output terminal of the DC power source up to the ignition set voltage.

    摘要翻译： 为等离子体发生器提供直流电力的直流电源被配置为形成用于产生等离子体放电的高电压的简单且小型的装置。 通过设置在直流电源中的电压源降压斩波器将短路电流极短地通过反应堆中的能量进行反复的步骤，多次重复进行，以排出积聚在反应器中的能量 到输出电容并依次升高输出电压，从而将电压升高到点火设定电压。 短路电流由设置在直流电源中的升压电路的开关元件形成。 重复通过蓄电和放电短路电流来提高输出端子处的电压，以将直流电源的输出端子处的电压升高到点火设定电压。

    SPUTTERING APPARATUS
    237.
    发明申请
    SPUTTERING APPARATUS 审中-公开
    溅射装置

    公开(公告)号：US20160225591A1

    公开(公告)日：2016-08-04

    申请号：US15094608

    申请日：2016-04-08

    申请人： Sputtering Components, Inc.

    发明人： Daniel Theodore Crowley ,  Patrick Lawrence Morse ,  John Robert German ,  William A. Meredith, JR.

    IPC分类号： H01J37/34 ,  C23C14/52 ,  C23C14/35

    CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/52 ,  H01J37/34 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3479

    摘要： A magnetron assembly for a rotary target cathode comprises an elongated support structure, a magnet bar structure movably positioned below the support structure, and a plurality of drive modules coupled to the support structure. The drive modules each include a motorized actuation mechanism operatively coupled to the magnet bar structure. A controller and battery module is coupled to the support structure and is in operative communication with the drive modules. The controller and battery module includes an electronic controller and at least one rechargeable battery. The battery is configured to energize each motorized actuation mechanism and the electronic controller. One or more power generation modules is coupled to the support structure and in electrical communication with the battery, such that electrical energy output from the power generation modules recharges the battery.

    摘要翻译： 用于旋转靶阴极的磁控管组件包括细长的支撑结构，可移动地定位在支撑结构下方的磁棒结构以及耦合到支撑结构的多个驱动模块。 驱动模块各自包括可操作地联接到磁棒结构的电动致动机构。 控制器和电池模块耦合到支撑结构并与驱动模块进行操作性通信。 控制器和电池模块包括电子控制器和至少一个可充电电池。 电池被配置成为每个电动致动机构和电子控制器通电。 一个或多个发电模块耦合到支撑结构并与电池电连通，使得从发电模块输出的电能为电池充电。

    High-power sputtering source
    238.
    发明授权
    High-power sputtering source 有权
    大功率溅射源

    公开(公告)号：US09376745B2

    公开(公告)日：2016-06-28

    申请号：US14112618

    申请日：2012-03-30

    申请人： Siegfried Krassnitzer ,  Kurt Ruhm

    发明人： Siegfried Krassnitzer ,  Kurt Ruhm

    IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/3467 ,  H01J37/3497

    摘要： The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

    摘要翻译： 本发明涉及一种磁控溅射工艺，其允许材料以目标表面溅射，使得高比例的溅射材料以离子的形式提供。 根据本发明，使用简单的发生器实现所述目的，其功率被馈送到在多个时间间隔内分布的多个磁控溅射源，即在一个时间间隔期间将最大功率提供给一个溅射源，并且最大值 在随后的时间间隔内向下一个溅射源供电，从而获得大于0.2A / cm 2的放电电流密度。 溅射靶可以在关闭时间内冷却，从而防止超出温度限制。

    CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM
    239.
    发明申请
    CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM 有权
    在非极性溅射系统中从电极中去除电荷

    公开(公告)号：US20160181074A1

    公开(公告)日：2016-06-23

    申请号：US15055761

    申请日：2016-02-29

    申请人： Advanced Energy Industries, Inc.

    发明人： Kenneth W. Finley

    IPC分类号： H01J37/34 ,  C23C14/34

    CPC分类号： H01J37/3444 ,  C23C14/3485 ,  H01J37/3467 ,  H05H1/46 ,  H05H2001/4682

    摘要： This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

    摘要翻译： 本公开描述了一种非耗散缓冲电路，其被配置为在负载的阻抗快速上升之后升高施加到负载的电压。 因此，由于负载阻抗上升而导致负载的功率递减降低后，电压提升可以引起更快速的电流斜坡。 特别地，缓冲器可以包括单向开关，电压倍增器和限流器的组合。 在某些情况下，这些组件可分别是二极管，倍压器和电感。

    WAVEFORM FOR IMPROVED ENERGY CONTROL OF SPUTTERED SPECIES
    240.
    发明申请
    WAVEFORM FOR IMPROVED ENERGY CONTROL OF SPUTTERED SPECIES 有权
    改善突击物种能量控制的波形

    公开(公告)号：US20160118233A1

    公开(公告)日：2016-04-28

    申请号：US14894264

    申请日：2014-05-01

    申请人： Michael Wayne STOWELL

    发明人： Michael Wayne Stowell, Jr.

    IPC分类号： H01J37/34 ,  C23C14/54 ,  C23C14/34

    CPC分类号： H01J37/3464 ,  C23C14/3485 ,  C23C14/54 ,  H01J37/34 ,  H01J37/3444 ,  H01J37/3467

    摘要： This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit.

    摘要翻译： 本公开描述了用于调节溅射沉积室中的离子的密度和动能的系统和方法。 产生具有调制RF信号的脉冲DC波形并将其施加到溅射室。 在脉冲DC波形的周期终止时，产生反向电压尖峰。 该反向电压尖峰使溅射室的阴极和阳极的极性反转一段时间。 提供反向电压限制电路，以便将反向电压尖峰限制到所选择的反向电压阈值。 可以使用控制器来控制DC波形的应用的定时和持续时间，RF波形的定时和持续时间以及反向限制电路的接合。