公开(公告)号：US20050127363A1

公开(公告)日：2005-06-16

申请号：US10496801

申请日：2002-11-08

Applicant: Hirohiko Nishiki ,  Osamu Sakai ,  Akitsugu Hatano

Inventor： Hirohiko Nishiki ,  Osamu Sakai ,  Akitsugu Hatano

IPC: G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/144 ,  H01L29/786 ,  H01L51/50 ,  H01L29/15

CPC classification number: G02F1/1368 ,  G02F2001/13629 ,  H01L27/144

Abstract: An active-matrix substrate 30 includes multiple function lines 31, a structure for fixing up the arrangement of the function lines, a first conductive layer 43, a second conductive layer 42, multiple transistors 32 and multiple pixel electrodes 33. Each of the function lines 31 includes: a core 36, at least the surface of which has electrical conductivity; an insulating layer 37 that covers the surface of the core; and a semiconductor layer 38 that covers the insulating layer. Some portions of the first and second conductive layers 43 and 42 overlap with the respective semiconductor layers of the function lines but the others not. The transistors 32 are provided so as to have their channel defined as a region 44 in the semiconductor layer by the first and second conductive layers. The pixel electrodes 33 are electrically connected to the first conductive layer 43.

Abstract translation: 有源矩阵基板30包括多个功能线31，用于固定功能线的布置的结构，第一导电层43，第二导电层42，多晶体管32和多个像素电极33.每个功能线 31包括：芯36，至少其表面具有导电性; 覆盖芯的表面的绝缘层37; 以及覆盖绝缘层的半导体层38。 第一和第二导电层43和42的一些部分与功能线的各个半导体层重叠，而另一些不是。 晶体管32被设置成通过第一和第二导电层将其沟道定义为半导体层中的区域44。 像素电极33电连接到第一导电层43。

公开(公告)号：US06380603B1

公开(公告)日：2002-04-30

申请号：US09707158

申请日：2000-11-07

Applicant: Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

Inventor： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

IPC: H01L3106

CPC classification number: H01L31/02024 ,  H01L27/144

Abstract: A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

Abstract translation: 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

公开(公告)号：US5982011A

公开(公告)日：1999-11-09

申请号：US977468

申请日：1997-11-24

Applicant: Alexander Kalnitsky ,  Marco Sabatini

Inventor： Alexander Kalnitsky ,  Marco Sabatini

IPC: H01L27/144 ,  H01L27/14

CPC classification number: H01L27/144

Abstract: A photodiode structure augmented with active area photosensitive regions is used for detecting impinging radiation. The photodiode includes a semiconductor base layer doped with impurities of a first carrier type, a field oxide layer disposed upon the base layer with an opening formed therethrough, a plurality of auxiliary oxide layers wherein each is separately disposed upon the base layer, and a semiconductor diffusion layer doped with impurities of a second carrier type arranged upon the base layer and in contact with the oxide layers. When the photodiode is electrically energized, a plurality of integral photosensitive regions is created within the depletion region to facilitate the detection of impinging radiation at an increased quantum efficiency.

Abstract translation: 增加了有源区光敏区域的光电二极管结构用于检测入射辐射。 光电二极管包括掺杂有第一载流子类型的杂质的半导体基底层，设置在其上形成有开口的基底层上的场氧化物层，其中分别设置在基底层上的多个辅助氧化物层，以及半导体 扩散层，掺杂有布置在基底层上并与氧化物层接触的第二载体类型的杂质。 当光电二极管被通电时，在耗尽区内产生多个整体感光区域，以便以增加的量子效率检测入射辐射。

公开(公告)号：US5920091A

公开(公告)日：1999-07-06

申请号：US15448

申请日：1998-01-29

Applicant: Chih Hung Lin

Inventor： Chih Hung Lin

IPC: H01L27/144 ,  H01L31/105 ,  H01L29/04

CPC classification number: H01L27/144 ,  H01L31/1055

Abstract: An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.

Abstract translation: 公开了一种改进的光传感器的结构。 其结构特征是通过MOSFET从PIN光电二极管放大检测到的小光电流，在MOSFET中分配PIN光电二极管; 以避免常规PIN光电二极管的缺点，提高光感测灵敏度。

公开(公告)号：US5714773A

公开(公告)日：1998-02-03

申请号：US729884

申请日：1996-10-15

Applicant: Ellsworth C. Burrows ,  Andrew Gomperz Dentai ,  Clinton Randy Giles

Inventor： Ellsworth C. Burrows ,  Andrew Gomperz Dentai ,  Clinton Randy Giles

IPC: H01L27/146 ,  H01L31/0352 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L31/035281 ,  H01L27/144 ,  Y02E10/50

Abstract: The specification describes lightwave systems with remotely powered photoelectric generators. Optical power transmitted through the fiber is incident on a remotely located photodiode array. High power conversion efficiency coupled with a specially designed diode array generates sufficient power to operate electromechanical or electrooptic apparatus in the remote station. Long wavelength photodiodes are serially connected to increase the voltage to practical operating levels. In a communication system, with an optical signal transmitted with the optical power, multiplexers are used for separating the optical power from the optical signal. Also disclosed are optimally designed photodetector arrays in which the photodetector elements are segments of a circular or polygonal circularly symmetric array to increase the fill factor of the array.

Abstract translation: 该规范描述了具有远程供电的光电发生器的光波系统。 通过光纤传输的光功率入射到位于远处的光电二极管阵列上。 与专门设计的二极管阵列耦合的高功率转换效率产生足够的功率来在远程站中操作机电或电光设备。 长波长光电二极管串联连接以将电压提高到实际操作水平。 在通信系统中，利用光功率发送的光信号，使用多路复用器将光功率与光信号分离。 还公开了最佳设计的光电检测器阵列，其中光电检测器元件是圆形或多边形圆对称阵列的段，以增加阵列的填充因子。

公开(公告)号：US5576221A

公开(公告)日：1996-11-19

申请号：US358455

申请日：1994-12-19

Applicant: Hisashi Takemura ,  Tsutomu Tashiro

Inventor： Hisashi Takemura ,  Tsutomu Tashiro

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/0352 ,  H01L21/20

CPC classification number: B82Y20/00 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/035254

Abstract: To selectively grow a P type silicon layer and a Si/Ge.sub.x Si.sub.1-x superlattice layer under low temperature conditions in the area encircled with a groove, at least the side walls of which consist of silicon oxide film, which is formed in the silicon substrate. Thereby, the leak at the side of the superlattice layer can be reduced. Furthermore, by burying a metal film in the groove, the loss of light at the side of the superlattice layer can be suppressed to the minimum. Thus a light receiver having silicon/germanium silicon-mixed-crystal layer is stably formed in a silicon semiconductor substrate and optical absorption efficiency can be improved.

Abstract translation: 为了在包围沟槽的区域中，在低温条件下选择性地生长P型硅层和Si / GexSi1-x超晶格层，至少其侧壁由在硅衬底中形成的氧化硅膜构成。 由此，可以减少超晶格层侧的泄漏。 此外，通过将金属膜埋入凹槽中，可以将超晶格层侧的光的损失抑制到最小。 因此，在硅半导体衬底中稳定地形成具有硅/锗硅 - 混合晶层的光接收器，并且可以提高光吸收效率。

公开(公告)号：US5523557A

公开(公告)日：1996-06-04

申请号：US427872

申请日：1995-04-26

Applicant: Adrien Bruno

Inventor： Adrien Bruno

IPC: G02B6/12 ,  G02B6/42 ,  H01L27/144 ,  H01J40/14

CPC classification number: G02B6/12004 ,  G02B6/42 ,  H01L27/144

Abstract: Optoelectronic device integrating a photodetector having two diodes arranged side by side, constructed from layers of semiconductor material on a substrate that also incorporates a light guide for directing light to the diodes. The two identical, juxtaposed diodes (D1, D2) are arranged head to tail. The diode ensuring the photodetection is that which is reverse biased.

Abstract translation: 集成了具有两个并排布置的二极管的光电检测器的光电子器件，其由衬底上的半导体材料层构成，其还包括用于将光引导到二极管的光导。 两个相同并置的二极管（D1，D2）头排配置。 确保光电检测的二极管是反向偏置的二极管。

公开(公告)号：US5276349A

公开(公告)日：1994-01-04

申请号：US976431

申请日：1992-11-13

Applicant: Seiji Takahara

Inventor： Seiji Takahara

IPC: H01L27/146 ,  H01L27/144 ,  H01L31/0216 ,  H01L27/14 ,  H01L27/02

CPC classification number: H01L27/144 ,  H01L31/02164

Abstract: A semiconductor integrated circuit device with a built-in photosensor is provided with a light shielding aluminum film which is formed on a whole surface of the semiconductor integrated circuit device continuously to prevent faulty operation of the semiconductor integrated circuit because of incident light. In order to reduce parasitic capacity generated between a light shielding aluminum film and a wiring for transmitting a high-frequency signal or other elements whereto a high-frequency signal is applied, a light shielding aluminum film is partially removed on the wiring and other elements as well as a photosensor and a pad.

Abstract translation: 具有内置光电传感器的半导体集成电路器件设置有遮光铝膜，其连续地形成在半导体集成电路器件的整个表面上，以防止由于入射光而导致的半导体集成电路的故障操作。 为了减少在遮光铝膜与用于传输高频信号的布线或施加高频信号的其它元件之间产生的寄生电容，在布线和其它元件上部分去除遮光铝膜 以及光电传感器和垫。

公开(公告)号：US4961096A

公开(公告)日：1990-10-02

申请号：US320305

申请日：1989-02-27

Applicant: Masanori Idesawa

Inventor： Masanori Idesawa

IPC: H01L27/144

CPC classification number: H01L27/144

Abstract: In a semiconductor image position sensitive device having a photoconductive layer and a resistive layer thereon, an image position sensitive region is divided into a plurality of sections and an output electrode is provided on each boundary between the sections. Firstly, by use of the output electrode flanking a plurality of the sections, an image existing section, which is narrower than the width of the plurality of the sections, is defined. Secondly, an image position within the image existing section is detected by use of the output electrodes flanking the image existing section. And finally, from the position of the previously defined image existing section and the image position within the image existing section, the image position is determined. The resolution of image position sensing can be improved in proportion to the number of the sections.

Abstract translation: PCT No.PCT / JP88 / 00662 Sec。 371日期1989年2月27日 102（e）日本1989年2月27日PCT申请日1988年7月1日。在其上具有光电导层和电阻层的半导体图像位置敏感器件中，图像位置敏感区域被分成多个部分和输出 电极设置在各部分之间的每个边界上。 首先，通过使用位于多个部分的侧面的输出电极，限定比多个部分的宽度窄的图像存在部分。 其次，通过使用图像存在部分侧面的输出电极来检测图像存在部分内的图像位置。 最后，从先前定义的图像存在部分的位置和图像现有部分内的图像位置，确定图像位置。 图像位置检测的分辨率可以与部分数量成比例地提高。

公开(公告)号：US4916505A

公开(公告)日：1990-04-10

申请号：US699375

申请日：1985-02-07

Applicant: James W. Holm-Kennedy

Inventor： James W. Holm-Kennedy

IPC: H01L27/07 ,  H01L27/144 ,  H01L29/73 ,  H01L29/739 ,  H01L31/11 ,  H01L31/113

CPC classification number: H01L31/113 ,  H01L27/0705 ,  H01L27/144 ,  H01L29/7302 ,  H01L29/739 ,  H01L31/1105

Abstract: A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect transistor structure is at least partially transparent to radiation of at least part of the electro-magnetic spectrum. In some embodiments radiation sensitive material is deposited upon the gate portion of the sourceless field-effect transistor structure.

Abstract translation: 一种复合单极双极性半导体器件，其中在结二极管结构的一个部件的外表面上制造无源场效应晶体管结构。 在一些实施例中，无源场效应晶体管结构的栅极部分对至少部分电磁光谱的辐射至少部分透明。 在一些实施例中，辐射敏感材料沉积在无源场效应晶体管结构的栅极部分上。