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    SYSTEM FOR BALANCING THE VOLTAGE OF SERIES-CONNECTED SEMICONDUCTOR ELEMENTS
    245.
    发明申请
    SYSTEM FOR BALANCING THE VOLTAGE OF SERIES-CONNECTED SEMICONDUCTOR ELEMENTS 审中-公开
    用于平衡串联连接半导体元件电压的系统

    公开(公告)号：US20170075371A1

    公开(公告)日：2017-03-16

    申请号：US15363648

    申请日：2016-11-29

    Applicant: STMICROELECTRONICS (TOURS) SAS

    Inventor： BERTRAND RIVET ,  DAVID JOUVE

    IPC: G05F1/613 ,  G05F1/46

    CPC classification number: G05F1/613 ,  G05F1/468 ,  H03K17/102

    Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

    Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。

    HIGH-VOLTAGE GALLIUM NITRIDE SCHOTTKY DIODE
    246.
    发明申请
    HIGH-VOLTAGE GALLIUM NITRIDE SCHOTTKY DIODE 有权
    高压氮化镓肖特基二极管

    公开(公告)号：US20170062625A1

    公开(公告)日：2017-03-02

    申请号：US15055791

    申请日：2016-02-29

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Arnaud Yvon

    IPC: H01L29/872 ,  H01L29/205 ,  H01L27/08 ,  H01L23/48 ,  H01L27/02 ,  H01L29/20 ,  H01L29/417

    CPC classification number: H01L29/872 ,  H01L23/481 ,  H01L27/0207 ,  H01L27/0814 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66212

    Abstract: A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.

    Abstract translation: 在硅载体上形成肖特基二极管。 非掺杂GaN层覆盖硅载体。 AlGaN层覆盖在非掺杂GaN层上。 形成欧姆接触的第一金属化和形成肖特基接触的第二金属化被提供在AlGaN层中和其上。 第一通孔从第一金属化延伸到硅支撑。 第二通孔从第二金属化延伸到上表面。

    BARIUM-STRONTIUM-TITANIUM (BST) CAPACITOR CONFIGURATION METHOD
    247.
    发明申请
    BARIUM-STRONTIUM-TITANIUM (BST) CAPACITOR CONFIGURATION METHOD 有权
    （BST）电容器配置方法（BSTIUM-STRONTIUM-TITANIUM（BST）CAPACITOR CONFIGURATION METHOD）

    公开(公告)号：US20160372266A1

    公开(公告)日：2016-12-22

    申请号：US14964654

    申请日：2015-12-10

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Sylvain Charley

    IPC: H01G7/06

    CPC classification number: H01G7/06 ,  G01R15/165 ,  G05F5/00 ,  H03H5/12 ,  H03H7/0153 ,  H04B1/0458

    Abstract: A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.

    Abstract translation: 电容器具有可由偏置电压设定的可变电容。 一种用于设置偏置电压的方法，包括以下步骤：（a）注入恒定电流以偏置电容器; （b）在时间间隔结束时测量电容器电压; （c）计算在时间间隔结束时获得的电容值; （d）将该值与期望值进行比较; 并且（e）只要计算值与设定值不同，则重复步骤（a）至（d）。 当计算值与设定值相匹配时; 测量的电容器电压被存储为施加到电容器的偏置电压以设置可变电容。

    POWER CONVERTER WITH INRUSH CURRENT LIMITATION
    249.
    发明申请
    POWER CONVERTER WITH INRUSH CURRENT LIMITATION 有权
    功率转换器具有浪涌电流限制

    公开(公告)号：US20160301298A1

    公开(公告)日：2016-10-13

    申请号：US14956660

    申请日：2015-12-02

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Laurent Gonthier ,  Muriel Nina

    IPC: H02M1/32 ,  H02M7/515

    CPC classification number: H02M1/32 ,  H02M1/36 ,  H02M7/062 ,  H02M7/125 ,  H02M7/162 ,  H02M7/515 ,  H02M2001/325

    Abstract: An AC/DC converter receives an AC voltage at a first terminal and a second terminal. A rectifying bridge has a first input terminal coupled via a resistive element to the first terminal and a second input terminal connected to the second terminal, with output terminals of the rectifying bridge coupled to third and fourth terminals of the converter for generating a DC voltage. A first controllable rectifying thyristor couples the first terminal to the third terminal and a second controllable rectifying thyristor couples the fourth terminal to the first terminal. The resistive element functions as an inrush protection device during a first phase when the thyristors are turned off. In a second phase, the thyristors are selectively actuated.

    Abstract translation: AC / DC转换器在第一端子和第二端子处接收AC电压。 整流桥具有经由电阻元件耦合到第一端子的第一输入端子和连接到第二端子的第二输入端子，整流桥的输出端子耦合到转换器的第三和第四端子，用于产生直流电压。 第一可控整流晶闸管将第一端子耦合到第三端子，而第二可控整流晶闸管将第四端子耦合到第一端子。 当晶闸管关断时，电阻元件在第一阶段用作浪涌保护器件。 在第二阶段中，选择性地致动晶闸管。

    POWER UNIT USING FLEXIBLE CONDUCTIVE MEMBER
    250.
    发明申请
    POWER UNIT USING FLEXIBLE CONDUCTIVE MEMBER 有权
    电力单元使用灵活的导电构件

    公开(公告)号：US20160301037A1

    公开(公告)日：2016-10-13

    申请号：US14681237

    申请日：2015-04-08

    Applicant: STMicroelectronics (Tours) SAS

    Inventor： Alexis Durand ,  Franck Dosseul

    IPC: H01M2/02 ,  H01M10/04

    CPC classification number: H01M2/0202 ,  H01M2/0478 ,  H01M2/22 ,  H01M10/0436 ,  H01M2220/30

    Abstract: An electronic device includes a flexible conductive member having a first length, and a battery substrate having a second length shorter or equal than the first length. There is an active battery on the battery substrate. An adhesive layer couples the active battery and the battery substrate to the flexible conductive member such that the active battery and the flexible conductive member are electrically coupled, and such that the flexible substrate encapsulates the active battery and the upper portion of the battery substrate without an intervening layer. The flexible conductive member includes an insulating flexible base layer having a conductive via formed therein. Upper and lower metallized layers are formed on the insulating flexible base layer and are electrically coupled to one another by the conductive via.

    Abstract translation: 电子设备包括具有第一长度的柔性导电构件和具有短于或等于第一长度的第二长度的电池基板。 电池基板上有一个有源电池。 粘合剂层将活性电池和电池基底连接到柔性导电构件上，使得活性电池和柔性导电构件电耦合，并且使得柔性基板封装有源电池和电池基板的上部，而没有 中间层 柔性导电构件包括其中形成有导电通孔的绝缘柔性基底层。 上部和下部金属化层形成在绝缘柔性基底层上，并通过导电通孔彼此电耦合。

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