Cathode ray tube comprising a semiconductor cathode
    241.
    发明授权
    Cathode ray tube comprising a semiconductor cathode 失效
    包括半导体阴极的阴极射线管

    公开(公告)号:US6140664A

    公开(公告)日:2000-10-31

    申请号:US408088

    申请日:1995-03-21

    CPC classification number: H01J1/308 H01J29/04 H01J2201/319

    Abstract: To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

    Abstract translation: 为了防止位于栅电极下方的绝缘层的击穿,栅电极通过高欧姆电阻连接到外部端子。 高欧姆电阻可以形成用于多个栅电极的偏置电压的电阻网络的一部分。 电阻网络可以部分地实现在绝缘层上。

    Electric field emission cold cathode
    242.
    发明授权
    Electric field emission cold cathode 失效
    电场发射冷阴极

    公开(公告)号:US6084341A

    公开(公告)日:2000-07-04

    申请号:US912645

    申请日:1997-08-18

    Inventor: Hisashi Takemura

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: An electric field emission cold cathode which is free of short-circuited damage upon discharge is provided by forming a highly voltage-withstandable control mechanism, which is capable of limiting generation of current upon discharge, with a simple structure and through simple fabrication processes. The electric field emission cold cathode includes a sharp-pointed emitter, a gate electrode having an aperture surrounding the emitter, and a cathode electrode connected to the emitter. The electric field emission cold cathode further includes an n-type diffused layer connected to the emitter and the cathode electrode, and a p-type silicon substrate electrically connected to the cathode electrode at least at a side thereof facing the emitter. A pinch-off resistor is provided between the emitter and the cathode electrode. The pinch-off resistor has a saturation current value smaller than a short-circuit breakdown current of the emitter.

    Abstract translation: 通过形成一种能够以简单的结构和简单的制造工艺限制放电时产生电流的高电压可承受的控制机构来提供放电时没​​有短路损坏的电场发射冷阴极。 电场发射冷阴极包括尖锐的发射极,具有围绕发射极的孔的栅电极和连接到发射极的阴极。 电场发射冷阴极还包括连接到发射极和阴极的n型扩散层,以及至少在面向发射极的一侧与阴极电连接的p型硅衬底。 在发射极和阴极之间设置夹断电阻。 夹断电阻的饱和电流值小于发射极的短路击穿电流。

    Microtip emissive cathode electron source having conductive elements for
improving the uniformity of electron emission
    245.
    发明授权
    Microtip emissive cathode electron source having conductive elements for improving the uniformity of electron emission 失效
    具有用于改善电子发射均匀性的导电元件的微尖端发射阴极电子源

    公开(公告)号:US6043592A

    公开(公告)日:2000-03-28

    申请号:US401134

    申请日:1995-03-08

    Inventor: Pierre Vaudaine

    CPC classification number: H01J1/3042 H01J3/022 H01J2201/319

    Abstract: A microtip emissive cathode electron source has a series of cathode conductors carrying a plurality of microtips and a series of grids. Each of the electrodes of at least one of the series is in contact with a resistive layer having meshes, a group of the microtips facing each mesh. A conductive element faces the interior of each mesh in front of the group of microtips corresponding to the mesh and is in contact with the resistive layer.

    Abstract translation: 微尖端发射阴极电子源具有承载多个微尖端和一系列栅极的一系列阴极导体。 该系列中的至少一个的每个电极与具有网格的电阻层接触,一组微尖端面对每个网。 导电元件面对对应于网状物的一组微尖端前面的每个网格的内部,并且与电阻层接触。

    Field emitter device having porous dielectric anodic oxide layer
    246.
    发明授权
    Field emitter device having porous dielectric anodic oxide layer 失效
    具有多孔介电阳极氧化层的场致发射器件

    公开(公告)号:US6034468A

    公开(公告)日:2000-03-07

    申请号:US776907

    申请日:1997-02-14

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/319

    Abstract: A field emitter device comprises a dielectric anodic aluminum oxide layer having pores with wires the front ends of which constitute individual field emitting cathodes, a gate eleectrode overlying a front surface of the layer, and an address electrode overlying a back surface of the layer and in electrical contact with the wires. The problem of short circuit between the gate electrode and the field emitter is overcome by cleaning the pore walls adjacent the gate electrode and/or by selectively dissolving the back ends of individual wires.

    Abstract translation: PCT No.PCT / GB95 / 01943 Sec。 371日期1997年2月14日 102(e)日期1997年2月14日PCT 1995年8月16日PCT PCT。 公开号WO96 / 06443 日期:1996年2月29日一种场致发射器件包括具有导电孔的电介质阳极氧化铝层,其前端构成单独的场发射阴极,覆盖该层前表面的栅极电极和覆盖在该背面上的寻址电极 并与电线电接触。 通过清洁邻近栅电极的孔壁和/或通过选择性地溶解单根线的后端来克服栅电极和场发射极之间的短路问题。

    Field emission device micropoint with current-limiting resistive
structure and method for making same
    248.
    发明授权
    Field emission device micropoint with current-limiting resistive structure and method for making same 失效
    具有限流电阻结构的场发射器件微点及其制造方法

    公开(公告)号:US6012958A

    公开(公告)日:2000-01-11

    申请号:US992166

    申请日:1997-12-14

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/319 H01J2329/00

    Abstract: A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further indudes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.

    Abstract translation: 公开了一种包括基板,形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件(“FED”)的微点组件。 微点组件还包括与特定FED元件相关联的电阻结构,其将电流限制到最大水平并且使对器件的剩余元件的影响最小化。 电阻率的任何变化是均匀分布的,因为相同的过程一贯地应用于多个元件位置。

    Field emission device with low driving voltage
    250.
    发明授权
    Field emission device with low driving voltage 失效
    低驱动电压的场致发射器件

    公开(公告)号:US5939833A

    公开(公告)日:1999-08-17

    申请号:US951177

    申请日:1997-10-15

    Abstract: The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

    Abstract translation: 本发明涉及将场致发射器件(或场发射极)施加到平板显示器上的场发射显示器。 根据本发明的场发射显示器具有其中像素阵列和扫描和数据驱动电路集成在一个绝缘基板上的下板,因此,可以实现能够提供高质量图像的场致发射显示 价格低廉。 电压被施加到扫描,并且数据驱动电路可以通过连接到每个像素的锡膜晶体管显着地减小。 场发射特性通过附着在场发射器件上的电阻来稳定,从而可以制造可靠的场发射显示。 此外,由于所有的工艺都是在低温下进行的,所以价格低廉且面积大的玻璃可以用作绝缘基板。

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