Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor
    21.
    发明授权
    Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor 有权
    使用突发MIT设备的可编程MIT传感器,以及包括MIT传感器的报警装置和二次电池防爆电路

    公开(公告)号:US08305221B2

    公开(公告)日:2012-11-06

    申请号:US12303000

    申请日:2007-05-30

    IPC分类号: G08B17/00

    CPC分类号: H01L49/003 G01K3/005

    摘要: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

    摘要翻译: 提供了具有可变MIT温度或电压的突发MIT装置,使用突发MIT装置的MIT传感器以及包括MIT传感器的报警装置和二次电池防爆电路。 MIT装置包括在转变温度或转变电压下经历突变MIT的突变MIT层和与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压,温度,电磁波,压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器,红外传感器,图像传感器,压力传感器,气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池,MIT传感器附接到二次电池以感测二次电池的温度,从而防止二次电池的可能的爆炸,以及由二次电池供电的保护电路体 。

    APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS
    24.
    发明申请
    APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS 审中-公开
    用于生长大面积二氧化硅薄膜的装置和在装置中生长大面积氧化物薄膜的方法

    公开(公告)号:US20100209623A1

    公开(公告)日:2010-08-19

    申请号:US12687185

    申请日:2010-01-14

    IPC分类号: C23C16/46 C23C16/00 C23C16/06

    摘要: Provided is a technology for in-situ growing a large area VO2 thin film which is an MIT material without using a conductive adhesive for high temperatures such as a silver paste. Generally, when a VO2 thin film, which is an MIT material, is grown using a PLD or sputtering method under a high temperature, a conductive adhesive is used to improve thermal conduction. However, the thin film may be contaminated by the conductive adhesive and the conductive adhesive should be removed after growing the thin film. Therefore, adherence between the substrate and the surface of a heater when growing the thin film needs to be improved, and thus, a large area VO2 thin film growing apparatus which may grow the large area VO2 thin film easily and a method of growing the large area VO2 thin film are provided.

    摘要翻译: 本发明提供一种用于原位生长大面积VO2薄膜的技术,该薄膜是MIT材料,而不使用高温下的导电粘合剂如银浆。 通常,当使用PLD或溅射法在高温下生长作为MIT材料的VO2薄膜时,使用导电粘合剂来改善导热性。 然而,薄膜可能被导电粘合剂污染,并且在生长薄膜之后应该去除导电粘合剂。 因此,需要提高生长薄膜时的基板与加热器表面的粘附性,能够容易地生长大面积VO2薄膜的大面积VO2薄膜生长装置, 提供面积VO2薄膜。

    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR
    26.
    发明申请
    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR 有权
    使用破碎麻醉器装置的可编程麻省传感器,以及包括麻省传感器的报警装置和二次电池防爆电路

    公开(公告)号:US20090315724A1

    公开(公告)日:2009-12-24

    申请号:US12303000

    申请日:2007-05-30

    CPC分类号: H01L49/003 G01K3/005

    摘要: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

    摘要翻译: 提供了具有可变MIT温度或电压的突变MIT装置,使用突发MIT装置的MIT传感器,以及包括MIT传感器的报警装置和二次电池防爆电路.MIT装置包括经历突发MIT的突发MIT层 在转变温度或过渡电压下,以及与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压,温度,电磁波,压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器,红外传感器,图像传感器,压力传感器,气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池,MIT传感器附接到二次电池以感测二次电池的温度,从而防止二次电池的可能的爆炸,以及由二次电池供电的保护电路体 。

    MIM Capacitor And Method For Manufacturing the Same
    27.
    发明申请
    MIM Capacitor And Method For Manufacturing the Same 有权
    MIM电容器及其制造方法

    公开(公告)号:US20090243039A1

    公开(公告)日:2009-10-01

    申请号:US12476923

    申请日:2009-06-02

    申请人: Bong Jun KIM

    发明人: Bong Jun KIM

    IPC分类号: H01L29/92

    CPC分类号: H01L21/76852

    摘要: Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.

    摘要翻译: 金属绝缘子金属电容器及其制造方法公开了一种MIM(金属 - 绝缘体 - 金属)电容器及其制造方法。 MIM电容器包括:在基板上的下金属层和下金属互连; 下金属层上的阻挡金属层; 阻挡金属层上的绝缘层; 绝缘层上的上金属层; 在下金属互连上具有通孔的层间绝缘层; 并插入通孔。

    MIM capacitor manufacturing method
    28.
    发明授权
    MIM capacitor manufacturing method 有权
    MIM电容器制造方法

    公开(公告)号:US07557003B2

    公开(公告)日:2009-07-07

    申请号:US11640154

    申请日:2006-12-15

    申请人: Bong Jun Kim

    发明人: Bong Jun Kim

    IPC分类号: H01L21/8242

    CPC分类号: H01L21/76852

    摘要: Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.

    摘要翻译: 金属 - 绝缘体 - 金属电容器及其制造方法公开了一种MIM(金属 - 绝缘体 - 金属)电容器。 MIM电容器包括:在基板上的下金属层和下金属互连; 下金属层上的阻挡金属层; 阻挡金属层上的绝缘层; 绝缘层上的上金属层; 在下金属互连上具有通孔的层间绝缘层; 并插入通孔。