Abstract:
Semiconductor trench inductor and transformer structures are provided, which include thin film conductive layers and magnetic layers formed within trenches etched in semiconductor substrates. Semiconductor trench devices effectively provide vertical oriented inductor and transformer structures whereby conductive coils and magnetic layers are vertically oriented on edge within trenches, thereby providing a space-saving compact design, and which allows the conductive layers within the trench to be enclosed by magnetic material, thereby providing a density of magnetic material that increases the storable energy density.
Abstract:
A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
Abstract:
A method of modifying via and solder ball shapes for maximizing semiconductor chip or silicon carrier strengths relative to thermal expansion and bending load zero points. The method entails modifying circular annular vias into elliptical annular vias so as to reduce stress concentration factors in the chip or carrier at the vias and solder balls. The reduction in the stress concentration is effected in the semiconductor chip or silicon carrier in regions proximate the vias and in wiring layers at the ends of the vias.
Abstract:
A structure for cooling an electronic device is disclosed. The structure includes a top layer disposed over the electronic device. The structure further includes a plurality of spring elements disposed between the top layer and the electronic device, wherein at least one of the spring elements comprises a spring portion and a fin portion. At least one of the spring elements provides a heat path from the electronic device and provides mechanical compliance. In another embodiment, the structure further includes a heat-conducting layer disposed over the electronic device, wherein the fin portion of each of at least one of the spring elements is coupled to the heat-conducting layer.
Abstract:
An apparatus and method providing flexibility to a silicon chip carrier which, in at least one embodiment, comprises multiple chips and a silicon chip carrier having thinned regions between some adjacent chips, thus, allowing for increased flexibility and reduced package warpage.
Abstract:
A system and method for self-servo-writing of multi-slot timing patterns is described. Individual timing marks are replaced with groups of timing mark slots. At each timing mark location, a time measurement is made by detecting a timing mark in one of the slots. Also, extensions to the existing timing marks are written in other slots. The combination of timing measurements at every timing mark and extensions to those timing marks written at every opportunity improves the overall precision of the timing propagation. The improved accuracy of timing mark placement produces a commensurate improvement in the placement of the concomitantly written servo-data. In addition, the alignment accuracy of the written pattern is less sensitive to variations in rotation speed and variations in the shape of written transitions. Moreover, only a single disk revolution is required at each servo radius to write servo data and propagate the timing marks.
Abstract:
A mechanism for servowriting on a storage medium of a storage device. The storage device has a transducer and a servo loop for positioning the transducer with respect to the storage medium. At least one transition is written on a track of the storage medium, while servoing on other transitions previously recorded on the storage medium. A reference waveform is derived as a function of a closed loop response of the servo loop and a position error waveform. The position error waveform corresponds to one or more position errors of the transducer relative to the previously recorded transitions. The reference waveform is usable in writing subsequent tracks on the storage medium. Using the reference waveform for writing subsequent tracks provides a substantial rejection of mechanical disturbances by the servo loop.
Abstract:
A thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
Abstract:
Semiconductor trench inductor and transformer structures are provided, which include thin film conductive layers and magnetic layers formed within trenches etched in semiconductor substrates. Semiconductor trench devices effectively provide vertical oriented inductor and transformer structures whereby conductive coils and magnetic layers are vertically oriented on edge within trenches, thereby providing a space-saving compact design, and which allows the conductive layers within the trench to be enclosed by magnetic material, thereby providing a density of magnetic material that increases the storable energy density.
Abstract:
A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.