公开(公告)号：US5844742A

公开(公告)日：1998-12-01

申请号：US735924

申请日：1996-10-24

申请人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

发明人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

IPC分类号： G11B5/012 ,  G11B5/55 ,  G11B5/596 ,  G11B21/10 ,  G11B5/02

CPC分类号： G11B5/5534 ,  G11B21/10 ,  G11B21/106 ,  G11B5/59633 ,  G11B5/59644

摘要： During a write revolution of a storage medium, a transition is written on the storage medium while servoing on another transition previously recorded on the storage medium. During that write revolution, a position error signal corresponding to the position error of the transducer relative to the previously recorded transition is determined. That position error signal is then stored, during the write revolution, to be used in computing a reference track value associated with the transition being written in order to correct for the position error

摘要翻译： 在存储介质的写入转动期间，在先前记录在存储介质上的另一个转换上进行伺服处理，在存储介质上写入转换。 在该写入旋转期间，确定对应于换能器相对于先前记录的转变的位置误差的位置误差信号。 然后，在写入旋转期间，存储该位置误差信号以用于计算与被写入的转换相关联的参考轨迹值，以便校正位置误差

公开(公告)号：US5659436A

公开(公告)日：1997-08-19

申请号：US405261

申请日：1995-03-16

申请人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

发明人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

IPC分类号： G11B5/012 ,  G11B5/55 ,  G11B5/596 ,  G11B21/10

CPC分类号： G11B5/5534 ,  G11B21/10 ,  G11B21/106 ,  G11B5/59633 ,  G11B5/59644

摘要： A mechanism for servowriting on a storage medium of a storage device. The storage device has a transducer and a servo loop for positioning the transducer with respect to the storage medium. At least one transition is written on a track of the storage medium, while servoing on other transitions previously recorded on the storage medium. A reference waveform is derived as a function of a closed loop response of the servo loop and a position error waveform. The position error waveform corresponds to one or more position errors of the transducer relative to the previously recorded transitions. The reference waveform is usable in writing subsequent tracks on the storage medium. Using the reference waveform for writing subsequent tracks provides a substantial rejection of mechanical disturbances by the servo loop.

摘要翻译： 一种用于在存储设备的存储介质上进行伺服驱动的机制。 存储装置具有用于相对于存储介质定位换能器的换能器和伺服回路。 至少一个转换被写在存储介质的轨道上，同时伺服在先前记录在存储介质上的其它转换。 作为伺服环路的闭环响应和位置误差波形的函数导出参考波形。 位置误差波形对应于传感器相对于先前记录的转换的一个或多个位置误差。 参考波形可用于将后续轨道写入存储介质上。 使用参考波形写入后续轨道可以显着抑制伺服回路的机械扰动。

公开(公告)号：US5991115A

公开(公告)日：1999-11-23

申请号：US211138

申请日：1998-12-14

申请人： Timothy Joseph Chainer ,  Anthony Paul Praino ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Edward John Yarmchuk

发明人： Timothy Joseph Chainer ,  Anthony Paul Praino ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Edward John Yarmchuk

IPC分类号： G11B5/55 ,  G11B5/596 ,  G11B19/04 ,  G11B21/10

CPC分类号： G11B19/04 ,  G11B21/106 ,  G11B5/5565 ,  G11B5/59633

摘要： Improvements in placement of timing patterns in self servo writing include correcting for random and systematic errors due to geometric effects. In a disk drive having a recording head with separate read and write elements, a method for determining separation between the elements and for correcting for such errors as a function of skew angle between the head and the disk. Errors resulting from misalignment and non-parallelism of the elements as well as misalignment of the head on it its actuator are also detected and corrected. Errors due to changes in rotational velocity of the disk and misplacement of timing patterns with respect to adjacent timing patterns are detected and corrected. In general, a single revolution process may be used to both write and detect random errors on each track and corrected on subsequent tracks.

摘要翻译： 自动写入中定时模式布置的改进包括纠正由于几何效应引起的随机和系统误差。 在具有具有分离的读取和写入元件的记录头的磁盘驱动器中，确定元件之间的间隔并用于校正这种错误的方法，其作为头部和盘之间的歪斜角的函数。 元件的不对准和不平行度导致的误差以及头部在其致动器上的未对准性也被检测和校正。 检测并纠正由于盘的旋转速度的变化引起的错误和定时图案相对于相邻的定时图案的错位。 通常，可以使用单次旋转处理来写入和检测每个轨道上的随机误差并在随后的轨道上进行校正。

公开(公告)号：US5901003A

公开(公告)日：1999-05-04

申请号：US628910

申请日：1996-04-08

申请人： Timothy Joseph Chainer ,  Anthony Paul Praino ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Edward John Yarmchuk

发明人： Timothy Joseph Chainer ,  Anthony Paul Praino ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Edward John Yarmchuk

IPC分类号： G11B5/55 ,  G11B5/596 ,  G11B19/04 ,  G11B21/10 ,  G11B5/09

CPC分类号： G11B19/04 ,  G11B21/106 ,  G11B5/5565 ,  G11B5/59633

摘要： Improvements in placement of timing patterns in self servo writing include correcting for random and systematic errors due to geometric effects. In a disk drive having a recording head with separate read and write elements, a method for determining separation between the elements and for correcting for such errors as a function of skew angle between the head and the disk. Errors resulting from misalignment and non-parallelism of the elements as well as misalignment of the head on it its actuator are also detected and corrected. Errors due to changes in rotational velocity of the disk and misplacement of timing patterns with respect to adjacent timing patterns are detected and corrected. In general, a single revolution process may be used to both write and detect random errors on each track and corrected on subsequent tracks.

摘要翻译： 自动写入中定时模式布置的改进包括纠正由于几何效应引起的随机和系统误差。 在具有具有分离的读取和写入元件的记录头的磁盘驱动器中，确定元件之间的间隔并用于校正这种错误的方法，其作为头部和盘之间的歪斜角的函数。 元件的不对准和不平行度导致的误差以及头部在其致动器上的未对准性也被检测和校正。 检测并纠正由于盘的旋转速度的变化引起的错误和定时图案相对于相邻的定时图案的错位。 通常，可以使用单次旋转处理来写入和检测每个轨道上的随机误差并在随后的轨道上进行校正。

公开(公告)号：US5907447A

公开(公告)日：1999-05-25

申请号：US893316

申请日：1997-07-16

申请人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

发明人： Edward John Yarmchuk ,  Mark Delorman Schultz ,  Bucknell C. Webb ,  Timothy Joseph Chainer

IPC分类号： G11B5/596 ,  G11B21/10 ,  G11B5/012

CPC分类号： G11B21/106 ,  G11B21/10 ,  G11B5/59633 ,  G11B5/59644

摘要： A mechanism for servowriting on a storage medium of a storage device. The storage device has a transducer and a servo loop for positioning the transducer with respect to the storage medium. At least one transition is written on a track of the storage medium, while servoing on other transitions previously recorded on the storage medium. A reference waveform is derived as a function of a closed loop response of the servo loop and a position error waveform. The position error waveform corresponds to one or more position errors of the transducer relative to the previously recorded transitions. The reference waveform is usable in writing subsequent tracks on the storage medium. Using the reference waveform for writing subsequent tracks provides a substantial rejection of mechanical disturbances by the servo loop.

摘要翻译： 一种用于在存储设备的存储介质上进行伺服驱动的机制。 存储装置具有用于相对于存储介质定位换能器的换能器和伺服回路。 至少一个转换被写在存储介质的轨道上，同时伺服在先前记录在存储介质上的其它转换。 作为伺服环路的闭环响应和位置误差波形的函数导出参考波形。 位置误差波形对应于传感器相对于先前记录的转换的一个或多个位置误差。 参考波形可用于将后续轨道写入存储介质上。 使用参考波形写入后续轨道可以显着抑制伺服回路的机械扰动。

公开(公告)号：US10173888B2

公开(公告)日：2019-01-08

申请号：US15650788

申请日：2017-07-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bucknell C. Webb

发明人： Bucknell C. Webb

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01R33/02 ,  G01R33/028 ,  H01H51/22

摘要： Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US20170166438A1

公开(公告)日：2017-06-15

申请号：US14969329

申请日：2015-12-15

申请人： Bucknell C. Webb

发明人： Bucknell C. Webb

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0056 ,  B81B2201/012 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0109 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0078

摘要： Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US20140013606A1

公开(公告)日：2014-01-16

申请号：US13567567

申请日：2012-08-06

申请人： Jae-Woong Nah ,  Katsuyuki Sakuma ,  Bucknell C. Webb

发明人： Jae-Woong Nah ,  Katsuyuki Sakuma ,  Bucknell C. Webb

IPC分类号： B43L7/00

CPC分类号： H01L21/50 ,  H01L21/561 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/32225 ,  H01L2224/81 ,  H01L2924/014

摘要： A template having tapered openings can be employed to enable injection of underfill material through gaps having a width less than a lateral dimension of an injector needle for the underfill material. Each tapered opening has a first lateral dimension on an upper side and a second lateral dimension on a lower side. Compliant material portions can be employed to accommodate variations in distance between the template and stacked semiconductor chips and/or an injector head. Optionally, another head can be employed to apply compressed gas to push out the underfill material after the underfill material is applied to the gaps. Multiple injector heads can be employed to simultaneously inject the underfill material at different sites. An adhesive layer can be substituted for the at least one lower compliant material portion.

摘要翻译： 可以使用具有锥形开口的模板，以使得能够通过具有小于底部填充材料的注射器针的横向尺寸的间隙的间隙注入底部填充材料。 每个锥形开口具有在上侧上的第一横向尺寸和在下侧上的第二横向尺寸。 可以采用符合材料的部分来适应模板和堆叠的半导体芯片和/或注射器头之间的距离的变化。 可选地，在将底部填充材料施加到间隙之后，可以使用另一个头部来施加压缩气体以推出底部填充材料。 可以使用多个注射器头来同时将底部填充材料注入不同的位置。 粘合剂层可以代替至少一个下顺应材料部分。

公开(公告)号：US08492901B2

公开(公告)日：2013-07-23

申请号：US12614062

申请日：2009-11-06

申请人： Bucknell C. Webb

发明人： Bucknell C. Webb

IPC分类号： H01L23/538

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A structure includes a wafer having a top wafer surface. The wafer defines an opening. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The wafer has a thickness in the first reference direction. The structure also includes a through-wafer via formed in the opening. The through-wafer via has a shape, when viewed in a plane perpendicular to the first reference direction and parallel to the top wafer surface, of at least one of a spiral and a C-shape. The through-wafer via has a height in the first reference direction essentially equal to the thickness of the wafer in the first reference direction. Manufacturing techniques are also disclosed.

摘要翻译： 一种结构包括具有顶部晶片表面的晶片。 晶片限定开口。 顶部晶片表面限定垂直于顶部晶片表面的第一参考方向。 晶片具有第一基准方向的厚度。 该结构还包括形成在开口中的贯通晶片通孔。 当在垂直于第一参考方向的平面中观察并且平行于顶部晶片表面时，贯穿晶片通孔具有螺旋形和C形中的至少一种形状。 贯通晶片通孔的第一参考方向的高度基本上等于晶片在第一参考方向上的厚度。 还公开了制造技术。

公开(公告)号：US08487447B2

公开(公告)日：2013-07-16

申请号：US13111283

申请日：2011-05-19

申请人： Mario J. Interrante ,  Gary LaFontant ,  Michael J. Shapiro ,  Thomas A. Wassick ,  Bucknell C. Webb

发明人： Mario J. Interrante ,  Gary LaFontant ,  Michael J. Shapiro ,  Thomas A. Wassick ,  Bucknell C. Webb

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3171 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02163 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05551 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/06131 ,  H01L2224/06134 ,  H01L2224/13005 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13026 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/05552

摘要： A semiconductor structure which includes a plurality of stacked semiconductor chips in a three dimensional configuration. There is a first semiconductor chip in contact with a second semiconductor chip. The first semiconductor chip includes a through silicon via (TSV) extending through the first semiconductor chip; an electrically conducting pad at a surface of the first semiconductor chip, the TSV terminating in contact at a first side of the electrically conducting pad; a passivation layer covering the electrically conducting pad, the passivation layer having a plurality of openings; and a plurality of electrically conducting structures formed in the plurality of openings and in contact with a second side of the electrically conducting pad, the contact of the plurality of electrically conducting structures with the electrically conducting pad being offset with respect to the contact of the TSV with the electrically conducting pad.

摘要翻译： 一种半导体结构，其包括三维结构中的多个层叠半导体芯片。 存在与第二半导体芯片接触的第一半导体芯片。 第一半导体芯片包括延伸穿过第一半导体芯片的贯穿硅通孔（TSV）; 在所述第一半导体芯片的表面处的导电焊盘，所述TSV终止于所述导电焊盘的第一侧接触; 覆盖所述导电焊盘的钝化层，所述钝化层具有多个开口; 以及形成在所述多个开口中并与所述导电垫的第二侧接触的多个导电结构，所述多个导电结构与所述导电垫的接触相对于所述TSV的接触而偏移 与导电垫。