公开(公告)号：US20060177600A1

公开(公告)日：2006-08-10

申请号：US11053363

申请日：2005-02-08

Applicant: Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

Inventor： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

IPC: H05H1/02 ,  C23C16/00 ,  H05H1/46

CPC classification number: H01J37/32688 ,  H01J37/321

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate within a substrate plane during substrate processing. A gas-delivery system is configured to introduce a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber. A magnetic confinement ring with magnetic dipoles is disposed circumferentially around a symmetry axis orthogonal to the substrate plane and provides a magnetic field with a net dipole moment substantially nonparallel with the substrate plane. A controller controls the gas-delivery system, the pressure-control system, and the high-density plasma system.

Abstract translation: 衬底处理系统具有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间将衬底支撑在衬底平面内。 气体输送系统构造成将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体产生系统与处理室可操作地耦合。 具有磁偶极子的磁约束环周围围绕与基板平面正交的对称轴设置，并提供具有与基板平面基本上不平行的净偶极矩的磁场。 控制器控制气体输送系统，压力控制系统和高密度等离子体系统。

公开(公告)号：US06894474B2

公开(公告)日：2005-05-17

申请号：US10165489

申请日：2002-06-07

Applicant: Michael S. Cox ,  Canfeng Lai ,  Qiwei Liang

Inventor： Michael S. Cox ,  Canfeng Lai ,  Qiwei Liang

IPC: H01J37/32 ,  H05H1/00 ,  G01N27/00

CPC classification number: H01J37/32935 ,  H05H1/0006

Abstract: A probe for measuring plasma properties in a processing chamber, comprises a conductive rod having a front portion and a rear portion. The front portion of the conductive rod comprises a probe surface adapted to be coplanar with an interior wall of the chamber. The probe also includes an insulating sheath circumscribing the conductive rod.

Abstract translation: 用于测量处理室中的等离子体特性的探针包括具有前部和后部的导电棒。 导电棒的前部包括适于与室的内壁共面的探针表面。 探头还包括一个围绕导电棒的绝缘护套。

公开(公告)号：US06869880B2

公开(公告)日：2005-03-22

申请号：US10057014

申请日：2002-01-24

Applicant: Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

Inventor： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC: C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C30B25/10 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/20

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

Abstract translation: 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US06682603B2

公开(公告)日：2004-01-27

申请号：US10141391

申请日：2002-05-07

Applicant: Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

Inventor： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC: C23C1600

CPC classification number: C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

Abstract: A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface is portion, without interfering with positioning of the substrate.

Abstract translation: 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会妨碍定位 的基底。

公开(公告)号：US06447651B1

公开(公告)日：2002-09-10

申请号：US09800798

申请日：2001-03-07

Applicant: Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

Inventor： Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

IPC: C23C1435

CPC classification number: C23C16/45508 ,  C23C16/507 ,  C23C16/52

Abstract: A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.

Abstract translation: 提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。 在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。 这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

公开(公告)号：US07651587B2

公开(公告)日：2010-01-26

申请号：US11202043

申请日：2005-08-11

Applicant: Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

Inventor： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Abstract translation: 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

公开(公告)号：US07572647B2

公开(公告)日：2009-08-11

申请号：US11670728

申请日：2007-02-02

Applicant: Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/00

CPC classification number: C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31608

Abstract: A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Abstract translation: 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20060150913A1

公开(公告)日：2006-07-13

申请号：US11034515

申请日：2005-01-10

Applicant: Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

Inventor： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

IPC: H05H1/24 ,  C23C16/00

CPC classification number: H01J37/321

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract translation: 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于10 11 / cm 3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

公开(公告)号：US20060075967A1

公开(公告)日：2006-04-13

申请号：US10963030

申请日：2004-10-12

Applicant: Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

Inventor： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

IPC: H01L21/20 ,  C23C16/00

CPC classification number: H01J37/321 ,  C23C16/045 ,  C23C16/401 ,  C23C16/507 ,  H05B6/26

Abstract: A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

Abstract translation: 衬底处理系统设置有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。 气体输送系统构造成将气体引入处理室。 提供压力控制系统以保持处理室内的选定压力。 高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。 它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。 还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

公开(公告)号：US06755150B2

公开(公告)日：2004-06-29

申请号：US09839360

申请日：2001-04-20

Applicant: Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

Inventor： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC: C23C1600

CPC classification number: H01J37/32431

Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

Abstract translation: 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。