利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.027 秒)

    Low-frequency bias power in HDP-CVD processes
    1.
    发明授权
    Low-frequency bias power in HDP-CVD processes 失效
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US07571698B2

    公开(公告)日：2009-08-11

    申请号：US11034515

    申请日：2005-01-10

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： C23C16/00 ,  C23C14/00

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体传送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

    LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES
    2.
    发明申请
    LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES 审中-公开
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US20090263594A1

    公开(公告)日：2009-10-22

    申请号：US12493878

    申请日：2009-06-29

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： C23C16/50 ,  C23C16/40

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

    Low-frequency bias power in HDP-CVD processes
    3.
    发明申请
    Low-frequency bias power in HDP-CVD processes 失效
    HDP-CVD工艺中的低频偏置功率

    公开(公告)号：US20060150913A1

    公开(公告)日：2006-07-13

    申请号：US11034515

    申请日：2005-01-10

    申请人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    发明人： Rongping Wang ,  Canfeng Lai ,  Yuri Trachuk ,  Siamak Salimian

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 设置在处理室内的衬底保持器在衬底处理期间支撑衬底。 气体输送系统将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体发生系统在处理室内形成密度大于10 11 / cm 3的等离子体。 射频偏置系统以小于5MHz的频率在衬底上产生电偏压。 控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER
    4.
    发明申请
    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
    双等离子体源，灯加热等离子体室

    公开(公告)号：US20120222618A1

    公开(公告)日：2012-09-06

    申请号：US13193453

    申请日：2011-07-28

    申请人： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    发明人： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/511

    CPC分类号： C23C16/517 ,  H01J37/32082 ,  H01J37/32357

    摘要： Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

    摘要翻译： 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

    Chamber clean method using remote and in situ plasma cleaning systems
    5.
    发明授权
    Chamber clean method using remote and in situ plasma cleaning systems 失效
    室内清洁方法使用远程和原位等离子体清洁系统

    公开(公告)号：US07588036B2

    公开(公告)日：2009-09-15

    申请号：US10187817

    申请日：2002-07-01

    申请人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

    发明人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

    IPC分类号： B08B7/00 ,  B08B7/04

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J2237/022 ,  Y10S438/905

    摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.

    摘要翻译： 一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。 根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
    7.
    发明申请
    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
    用于感应耦合高密度等离子体加工室的内部平衡线圈

    公开(公告)号：US20080185284A1

    公开(公告)日：2008-08-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。