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公开(公告)号：US08227689B2
公开(公告)日：2012-07-24
申请号：US10868080
申请日：2004-06-15
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/0735 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
摘要翻译： 太阳能电池包括具有第一层晶格参数的第一层，具有不同于第一层晶格参数的第二层晶格参数的第二层，其中第二层包括光活性第二层材料; 以及具有不同于所述第二层晶格参数的第三层晶格参数的第三层，其中所述第三层包括光活性第三层材料。 透明缓冲层在第二层和第三层之间延伸并接触第二层和第三层，并且具有随着从第二层朝向第三层的距离的增加而变化的缓冲层晶格参数，以便与第二层和第三层的晶格匹配 层。 在太阳能电池中可能存在附加的子电池层和缓冲层。
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22.发明授权Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer 有权具有晶格失配的GrIII-GrV-X层和组成梯度缓冲层的多结太阳能电池公开(公告)号：US07807921B2
公开(公告)日：2010-10-05
申请号：US10868079
申请日：2004-06-15
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/1852 , Y02E10/544
摘要： A multijunction solar cell includes a first photoactive subcell layer having a first-subcell lattice parameter and a composition including (a) at least one Group III element, at least one Group V element other than (nitrogen, phosphorus), and (nitrogen, phosphorus), or (b) a material selected from the group including GaInAsBi, GaInAsSb, GaInAsP, ZnGeAs2, or BGaInAs. The multijunction solar cell also has a substrate having a substrate lattice parameter different from the first-subcell lattice parameter, and a composition-graded buffer layer between the first photoactive subcell layer and the substrate and having a buffer-layer lattice parameter graded between the first-subcell lattice parameter and the substrate lattice parameter. The substrate may be a second photoactive subcell layer having a second-subcell lattice parameter different from the first-subcell lattice parameter and sensitive to a second-photoactive-subcell-layer wavelength, and the buffer layer is transparent to the second-photoactive-subcell-layer wavelength.
摘要翻译： 多结太阳能电池包括具有第一子电池晶格参数的第一光活性子电池层和包含（a）至少一种III族元素，除（氮，磷）以外的至少一种V族元素和（氮，磷） ）或（b）选自包括GaInAsBi，GaInAsSb，GaInAsP，ZnGeAs2或BGaInAs的材料的材料。 所述多结太阳能电池还具有基板，其具有不同于所述第一子电池晶格参数的基板晶格参数，以及在所述第一光活性子电池层和所述基板之间的组成梯度缓冲层，并且具有在所述第一子电池晶格参数之间分级的缓冲层晶格参数 子单元晶格参数和衬底晶格参数。 衬底可以是具有与第一子电池晶格参数不同的第二子电池晶格参数并且对第二光活性 - 子电池层波长敏感的第二光活性子电池层，并且缓冲层对第二光活性子电池是透明的 层波长。
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公开(公告)号：US10340401B2
公开(公告)日：2019-07-02
申请号：US13239969
申请日：2011-09-22
IPC分类号： H01L31/0687 , H01L31/0304 , H01L31/18
摘要： Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.
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公开(公告)号：US09997659B2
公开(公告)日：2018-06-12
申请号：US13617316
申请日：2012-09-14
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/078 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US08642883B2
公开(公告)日：2014-02-04
申请号：US12852574
申请日：2010-08-09
IPC分类号： H01L31/00
CPC分类号： H01L31/0735 , H01L31/072 , H01L31/0725 , Y02E10/544
摘要： A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.
摘要翻译： 一种太阳能电池，包括具有第一带隙的基底半导体层，具有第二带隙的发射极半导体层和位于所述基底半导体层和所述发射极半导体层之间的耗尽半导体层，所述耗尽半导体层具有第三带隙，其中所述第三带隙 带隙大于第一带隙和第二带隙。
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公开(公告)号：US20130220407A1
公开(公告)日：2013-08-29
申请号：US13407924
申请日：2012-02-29
CPC分类号： H01L31/1844 , H01L31/0304 , H01L31/03042 , H01L31/0687 , H01L31/0693 , H01L31/0735 , Y02E10/544
摘要： A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.
摘要翻译： 一种太阳能电池，包括位于基极区域和背面场层之间的基极区域，背面场层和δ掺杂层。
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公开(公告)号：US20100229930A1
公开(公告)日：2010-09-16
申请号：US12404795
申请日：2009-03-16
IPC分类号： H01L31/00 , H01L31/0216
CPC分类号： H01L31/1844 , H01L29/88 , H01L31/035272 , H01L31/0687 , H01L31/0693 , Y02E10/544 , Y02P70/521
摘要： A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
摘要翻译： 提出了一种用于互连多结太阳能电池中的隧道结的高掺杂层。 高掺杂层是用于连接多结太阳能电池中的两个或更多个p-on-n或n-on-p太阳能电池的隧道二极管结的一个或两个层中的δ掺杂层。 通过中断隧道二极管的一个层的外延生长来制造δ掺杂层，以大大高于在生长隧道二极管的层中使用的浓度沉积三角形掺杂剂，然后继续外延生长 剩余隧道二极管。
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公开(公告)号：US07659474B2
公开(公告)日：2010-02-09
申请号：US11121650
申请日：2005-05-04
IPC分类号： H01L31/00 , H01L25/00 , H02N6/00 , H01L31/042
CPC分类号： H01L27/142 , Y02E10/50
摘要： A solar cell array has at least one solar cell including a photovoltaic structure having a sun-facing front face and a back face, and having an active region, and an isotype heterojunction diode connected in electrical parallel with the active region of the photovoltaic structure.
摘要翻译： 太阳能电池阵列具有至少一个太阳能电池，该太阳能电池包括具有朝阳前面和背面的光电结构，并且具有有源区，以及与光伏结构的有源区并联连接的同形异质结二极管。
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29.发明授权Isoelectronic surfactant induced sublattice disordering in optoelectronic devices 有权等电子表面活性剂诱导光电器件中的亚晶格紊乱公开(公告)号：US07126052B2
公开(公告)日：2006-10-24
申请号：US10263626
申请日：2002-10-02
IPC分类号： H01L31/0264 , H01L31/04
CPC分类号： C30B25/186 , C30B29/40 , H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/02521 , H01L21/02543 , H01L21/02658 , H01L31/0687 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
摘要翻译： 一种使光电子器件层失调的方法，包括： 生长多个下层; 引入等电子表面活性剂; 生长一层; 使表面活性剂解吸; 并且生长的后续层都在25托的低压下进行。
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30.发明授权公开(公告)号：US07122734B2
公开(公告)日：2006-10-17
申请号：US10281302
申请日：2002-10-23
CPC分类号： H01L31/184 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02463 , H01L21/02505 , H01L21/02543 , Y02E10/544
摘要： A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.
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