公开(公告)号：US20240186365A1

公开(公告)日：2024-06-06

申请号：US18556537

申请日：2022-04-20

Applicant: Epinovatech AB

Inventor： Martin Andreas OLSSON

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/32

Abstract: A method for forming a matrix of light-emitting diode (LED) elements (11, 21, 31) of different colours is provided. The method comprises epitaxially growing, on a GaN sacrificial layer (140), a first n-doped GaN layer (111), a first InxGa(1-X)N layer (112) and a first p-doped GaN layer (113) to form a first array of first LED elements (11) for emitting light of a first colour, and forming a first etch mask (151) comprising a plurality of first trenches (161). The method further comprises: epitaxially growing a second array of second LED elements (21), for emitting light of a second colour, in the plurality of first trenches; forming a second etch mask (152) protecting the second array and comprising a plurality of second trenches (162); and epitaxially growing a third array of third LED elements (31), for emitting light of a third colour, in the plurality of second trenches.

公开(公告)号：US20230261621A1

公开(公告)日：2023-08-17

申请号：US18297526

申请日：2023-04-07

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/24 ,  H03F3/195

CPC classification number: H03F3/245 ,  H03F3/195 ,  H03F2200/451

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

公开(公告)号：US20230119801A1

公开(公告)日：2023-04-20

申请号：US17905908

申请日：2021-03-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H03K19/17728 ,  H03K19/17736 ,  H03K19/1776

Abstract: There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120)comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

公开(公告)号：US20220396886A1

公开(公告)日：2022-12-15

申请号：US17835804

申请日：2022-06-08

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: C25B1/04 ,  C25B9/23 ,  C25B9/50 ,  C25B11/049 ,  C25B11/046

Abstract: A device for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure comprising a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface, the electron guiding layer of the semiconductor structure comprising an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode arranged on the surface of the semiconductor structure; and at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode comprises a plurality of quantum dots of InxGa(1−x)N material, wherein 0.4≤x≤1. A system comprising such device is also disclosed.

公开(公告)号：US20220393656A1

公开(公告)日：2022-12-08

申请号：US17807677

申请日：2022-06-17

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/24 ,  H03F3/195

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

公开(公告)号：US11316165B2

公开(公告)日：2022-04-26

申请号：US17302907

申请日：2021-05-14

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01M4/134 ,  H01M4/66 ,  H01M4/62 ,  H01M4/04 ,  H01M4/525 ,  H01M4/02

Abstract: There is provided a solid-state battery layer structure which may include an anode current collector metal layer, an anode layer arranged on the anode current collector metal layer, a solid electrolyte layer arranged on the anode layer laterally, a cathode layer arranged on the solid electrolyte layer, and a cathode current collector metal layer, and a plurality of nanowire structures comprising silicon and/or gallium nitride, wherein said nanowire structures are arranged on the anode layer and, wherein said nanowire structures are laterally and vertically enclosed by the solid electrolyte layer, wherein the anode layer comprises silicon and a plurality of metal vias connecting the plurality of nanowire structures with the anode current collector metal layer. Methods for producing solid-state battery layer structures are also provided.

公开(公告)号：US20210327712A1

公开(公告)日：2021-10-21

申请号：US17049535

申请日：2019-04-23

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/20 ,  H01L29/16 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L39/08 ,  H01L39/12 ,  H01L39/22 ,  G06N10/00 ,  G01N27/414

Abstract: A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.

公开(公告)号：US20250160056A1

公开(公告)日：2025-05-15

申请号：US18838581

申请日：2023-02-15

Applicant: EPINOVATECH AB

Inventor： Martin Andreas OLSSON

IPC: H10H20/812 ,  H10H20/01 ,  H10H20/825

Abstract: A device (1) for emitting light, the device (1) comprising: a substrate (2); abase layer (4) arranged on the substrate (2); a diode layer structure (10) arranged on the base layer (4), the diode layer structure (10) comprising a quantum well layer structure (30) sandwiched between an n-doped semiconductor layer (12) and a p-doped semiconductor layer (14); the quantum well layer structure (30) comprising a first (41) and second (42) quantum well, a first (51) and a second (52) proximal barrier layer, and a first (61) and a second (62) distal barrier layer, wherein the first (41) and second (42) quantum wells and the first (51) and second (52) proximal barrier layers are sandwiched between the first (61) and second (62) distal barrier layers

公开(公告)号：US20250063732A1

公开(公告)日：2025-02-20

申请号：US18720608

申请日：2022-12-13

Applicant: EPINOVATECH AB

Inventor： Martin Andreas OLSSON

IPC: H10B43/27 ,  H01L21/28 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H10B43/30

Abstract: A memory device (1) comprising a semiconductor pillar (40) and at least one memory cell (50) associated with the pillar (40), wherein each of the at least one memory cells (50) comprises a charge trap (60) and a transistor (2), wherein. for each of the at least one memory cells (50): the charge trap (60) of the memory cell (50) is configured to control a threshold voltage of the transistor (2) of the memory cell (50) by a stored charge; and the transistor (2) of the memory cell (50) comprises a source pillar segment (10), a drain pillar segment (14) and a body pillar segment (12), wherein at least one p-doped pillar segment (10, 12, 14) of the transistor (2) comprises a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AIGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof.

公开(公告)号：US20240332423A1

公开(公告)日：2024-10-03

申请号：US18739078

申请日：2024-06-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/78 ,  G01N27/414 ,  G06N10/00 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/10 ,  H10N60/83 ,  H10N60/85

CPC classification number: H01L29/7851 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/0924 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/20 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/128 ,  H10N60/83 ,  H10N60/85 ,  G01N27/4146 ,  G06N10/00 ,  H01L29/41791

Abstract: A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.