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    Apparatus for radial delivery of gas to a chamber and methods of use thereof
    23.
    发明授权
    Apparatus for radial delivery of gas to a chamber and methods of use thereof 失效
    用于将气体径向输送到室的装置及其使用方法

    公开(公告)号：US08562742B2

    公开(公告)日：2013-10-22

    申请号：US12907947

    申请日：2010-10-19

    Applicant: Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

    Inventor： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

    IPC: C23C16/00 ,  C23C16/455 ,  H01L21/3065

    CPC classification number: H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68785 ,  Y10T137/6416 ,  Y10T137/8593

    Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

    Abstract translation: 本文提供了将气体输送到室的装置及其使用方法。 在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。

    METHOD AND APPARATUS FOR WAFER TEMPERATURE MEASUREMENT USING AN INDEPENDENT LIGHT SOURCE
    24.
    发明申请
    METHOD AND APPARATUS FOR WAFER TEMPERATURE MEASUREMENT USING AN INDEPENDENT LIGHT SOURCE 审中-公开
    使用独立光源进行温度温度测量的方法和装置

    公开(公告)号：US20130059403A1

    公开(公告)日：2013-03-07

    申请号：US13539340

    申请日：2012-06-30

    Applicant: Jared Ahmad Lee ,  Jiping Li

    Inventor： Jared Ahmad Lee ,  Jiping Li

    IPC: H01L21/66 ,  H01L21/306

    CPC classification number: G01J5/0007 ,  H01L21/67248

    Abstract: An apparatus is provided for measuring a substrate temperature during an etching process, comprising: one or more windows formed in a substrate supporting surface; a first signal generator configured to pulse a first signal; and a first sensor positioned to receive energy transmitted from the first signal generator through the one or more windows. A method is provided for measuring a substrate temperature during an etching process comprising: heating a substrate using radiant energy; pulsing a first light; determining a metric indicative of total transmittance through the substrate when the first light is pulsed on; determining a metric indicative of background transmittance through the substrate when the first light is pulsed off; and determining a process temperature.

    Abstract translation: 提供一种用于在蚀刻工艺期间测量衬底温度的装置，包括：形成在衬底支撑表面中的一个或多个窗口; 第一信号发生器，被配置为脉冲第一信号; 以及第一传感器，其被定位成从所述一个或多个窗口接收从所述第一信号发生器传送的能量。 提供了一种用于在蚀刻工艺期间测量衬底温度的方法，包括：使用辐射能加热衬底; 脉冲第一光; 当所述第一光脉冲通过时，确定指示通过所述基板的总透射率的度量; 当所述第一光被脉冲熄灭时，确定指示通过所述衬底的背景透射率的度量; 并确定工艺温度。

    VACUUM CHAMBERS WITH SHARED PUMP
    25.
    发明申请
    VACUUM CHAMBERS WITH SHARED PUMP 审中-公开
    真空泵与共享泵

    公开(公告)号：US20120222813A1

    公开(公告)日：2012-09-06

    申请号：US13408810

    申请日：2012-02-29

    Applicant: Aniruddha Pal ,  Martin Jeffrey Salinas ,  Jared Ahmad Lee ,  Paul B. Reuter ,  Imad Yousif

    Inventor： Aniruddha Pal ,  Martin Jeffrey Salinas ,  Jared Ahmad Lee ,  Paul B. Reuter ,  Imad Yousif

    IPC: C23C16/455 ,  B05C11/00 ,  C23C16/50 ,  B05C5/02 ,  B05B1/18

    CPC classification number: C23C16/4412

    Abstract: Embodiments of the present disclosure generally relate to vacuum processing chambers having different pumping requirements and connected to a shared pumping system through a single foreline. In one embodiment, the vacuum processing chambers include a high conductance pumping conduit and a low conductance pumping conduit coupled to a single high conductance foreline. In another embodiment, a plurality of unbalanced chamber groups may be connected to a common pumping system by a final foreline.

    Abstract translation: 本公开的实施例一般涉及具有不同泵送要求的真空处理室，并且通过单个前级管线连接到共享泵送系统。 在一个实施例中，真空处理室包括高电导泵送管道和耦合到单个高电导前级管线的低电导泵送导管。 在另一个实施例中，多个不平衡室组可以通过最终的前级管线连接到共同的泵送系统。

    PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF
    27.
    发明申请
    PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF 审中-公开
    具有共享资源的过程池及其使用方法

    公开(公告)号：US20110269314A1

    公开(公告)日：2011-11-03

    申请号：US12905032

    申请日：2010-10-14

    Applicant: JARED AHMAD LEE ,  JAMES P. CRUSE ,  ANDREW NGUYEN ,  CORIE LYNN COBB ,  MING XU ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER

    Inventor： JARED AHMAD LEE ,  JAMES P. CRUSE ,  ANDREW NGUYEN ,  CORIE LYNN COBB ,  MING XU ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER

    IPC: H01L21/3065

    CPC classification number: H01L21/67109 ,  H01L21/6719

    Abstract: Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.

    Abstract translation: 提供了具有共享资源和使用方法的过程室。 在一些实施例中，衬底处理系统可以包括第一处理室，其具有设置在第一处理室内的第一衬底支撑件，其中第一衬底支撑件具有第一加热器和第一冷却板以控制第一衬底支撑件的温度; 第二处理室，具有设置在所述第二处理室内的第二基板支撑件，其中所述第二基板支撑件具有第二加热器和第二冷却板，以控制所述第二基板支撑件的温度; 以及共用传热流体源，其具有出口以向第一冷却板和第二冷却板提供传热流体，以及从第一冷却板和第二冷却板接收传热流体的入口。

    SYSTEM AND METHOD FOR CALIBRATING PRESSURE GAUGES IN A SUBSTRATE PROCESSING SYSTEM
    28.
    发明申请
    SYSTEM AND METHOD FOR CALIBRATING PRESSURE GAUGES IN A SUBSTRATE PROCESSING SYSTEM 有权
    用于在基板处理系统中校准压力计的系统和方法

    公开(公告)号：US20110265899A1

    公开(公告)日：2011-11-03

    申请号：US12916450

    申请日：2010-10-29

    Applicant: JAMES P. CRUSE ,  EZRA ROBERT GOLD ,  JARED AHMAD LEE ,  MING XU

    Inventor： JAMES P. CRUSE ,  EZRA ROBERT GOLD ,  JARED AHMAD LEE ,  MING XU

    IPC: F15D1/00 ,  G01L27/00

    CPC classification number: G01L27/005 ,  H01L21/67253 ,  Y10T137/86083

    Abstract: Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge.

    Abstract translation: 本文公开了用于校准耦合到具有转移体积的转移室的一个或多个处理室中的压力计的系统和方法。 该方法包括在传送体积和连接到传送室的第一处理室的第一内部容积中提供第一压力，其中传送体积和第一内部体积被流体耦合，将校准气体注入到传送体积中 将传送体积和第一内部体积中的压力提高到第二压力，使用耦合到传送室的参考压力表中的每一个测量第二压力，以及耦合到第一处理室的第一压力表，同时传送体积和 第一内部体积流体耦合，并且基于测量的参考压力计和第一压力计之间的第二压力的差异校准第一压力计。

    METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS
    29.
    发明申请
    METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS 失效
    将气体混合物提供给过程池对的方法和装置

    公开(公告)号：US20110265831A1

    公开(公告)日：2011-11-03

    申请号：US12907944

    申请日：2010-10-19

    Applicant: JARED AHMAD LEE ,  MARTIN JEFF SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

    Inventor： JARED AHMAD LEE ,  MARTIN JEFF SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

    IPC: B08B5/00 ,  B08B13/00 ,  F15D1/00 ,  C23F1/08

    CPC classification number: F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

    Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

    Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

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