公开(公告)号：US20100317179A1

公开(公告)日：2010-12-16

申请号：US12382419

申请日：2009-03-16

申请人： Juha T. RANTALA ,  Jyri PAULASAARI ,  Janne KYLMA ,  Turo T. TORMANEN ,  Jarkko PIETIKAINEN ,  Nigel HACKER ,  Admir HADZIC

发明人： Juha T. RANTALA ,  Jyri PAULASAARI ,  Janne KYLMA ,  Turo T. TORMANEN ,  Jarkko PIETIKAINEN ,  Nigel HACKER ,  Admir HADZIC

IPC分类号： H01L21/28 ,  H01L21/768

CPC分类号： C09D183/14 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76822 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

摘要： A method for making an integrated circuit device by: forming a plurality of transistors on a semiconductor substrate; forming multilayer interconnects by depositing a layer of metal; patterning the metal layer; depositing a first dielectric material, depositing a second dielectric material, patterning the first and second dielectric materials; and depositing a via filling metal material into the patterned areas; or, alternatively, by forming transistors on a substrate; depositing one of an electrically insulating or electrically conducting material; patterning said one of an electrically insulating or electrically conducting material; and depositing the other of the electrically insulating or electrically conducting material, so as to form a layer over said transistors having both electrically insulating and electrically conducting portions; wherein the first dielectric material, which is an organosiloxane material, and the electrically insulating material each has a carbon to silicon ratio of 1.5 to 1 or more.

摘要翻译： 一种制造集成电路器件的方法，包括：在半导体衬底上形成多个晶体管; 通过沉积一层金属形成多层互连; 图案化金属层; 沉积第一电介质材料，沉积第二介电材料，图案化第一和第二电介质材料; 以及将通孔填充金属材料沉积到图案化区域中; 或者，通过在衬底上形成晶体管; 沉积电绝缘或导电材料之一; 图案化所述电绝缘或导电材料之一; 以及沉积所述电绝缘或导电材料中的另一个，以便在所述晶体管上形成具有电绝缘和导电部分的层; 其中作为有机硅氧烷材料的第一介电材料和电绝缘材料各自具有1.5至1或更大的碳硅比。

公开(公告)号：US07479462B2

公开(公告)日：2009-01-20

申请号：US11213427

申请日：2005-08-29

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

IPC分类号： H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。

公开(公告)号：US07144827B2

公开(公告)日：2006-12-05

申请号：US10346539

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  T Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

发明人： Juha T. Rantala ,  Jason S. Reid ,  T Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit. Also disclosed is a method for making an integrated circuit comprising forming alternating areas of electrically conductive and dielectric materials, the dielectric materials formed by hydrolysing, partially or fully, one or more precursors, at least one of which having the formula (I): where R2 is a halogen, —OH, or alkoxy group, where M1 and M2 are independently a metal or metalloid, and where R1 is a fully or partially fluorinated alkyl group having from 1 to 10 carbon atoms or a fully or partially fluorinated aromatic group.

公开(公告)号：US06924384B2

公开(公告)日：2005-08-02

申请号：US10041122

申请日：2002-01-08

申请人： Juha T. Rantala ,  Arto L. T. Maaninen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

发明人： Juha T. Rantala ,  Arto L. T. Maaninen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

IPC分类号： C07F7/08 ,  C07F7/12 ,  C07F7/18 ,  C07F7/04 ,  C07F7/21

CPC分类号： C07F7/12 ,  C07F7/0874 ,  C07F7/123 ,  C07F7/1888

摘要： A compound of the general formula R1R2MR4R5 is disclosed wherein R1 and R2 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1 and R2 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, wherein R4 and R5 are independently an alkoxy group, OR3, or a halogen group, X, except where M is Si, R4 and R5 are both ethoxy groups or both chlorine groups, and R1 and R2 are perfluorinated groups. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R1MR4R5R6 are also disclosed.

摘要翻译： 公开了通式为R 1，R 2，R 4，R 5和R 5的化合物，其中R 1 R 2和R 2独立地是芳基，烷基，烯基，环氧基或炔基，其中R 1和R 2中的至少一个是/ SUP>完全或部分氟化，其中M选自周期表的第14族，其中R 4和R 5独立地是烷氧基， 3或卤素基团X除外，其中M为Si，R 4和R 5均为乙氧基或两个氯基， SUP> 1和R 2是全氟化基团。 形成的该化合物可以进一步反应以附加另外的有机R基团和/或单独或与一种或多种类似化合物水解形成分子量为500至10,000的材料，该材料可以沉积在各种 衬底作为涂层或沉积和图案化用于波导或其它光学器件部件。 还公开了制备通式为R 1，R 5，R 5，R 6和S 6的化合物的方法。

公开(公告)号：US09190616B2

公开(公告)日：2015-11-17

申请号：US14126447

申请日：2012-06-14

申请人： Jyri Paulasaari ,  Juha T. Rantala

发明人： Jyri Paulasaari ,  Juha T. Rantala

IPC分类号： H01L51/00 ,  C07F7/18 ,  C07F7/30 ,  C08G77/392

CPC分类号： H01L51/0036 ,  C07F7/1804 ,  C07F7/30 ,  C08G77/392 ,  H01L51/0074 ,  H01L51/0094

摘要： Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability. They are useful as dielectric films for semiconductor industry and for optical applications, including high-RI materials in CMOS image sensors.

摘要翻译： 提出了含有硅烷和锗烷单体的噻蒽部分的合成及其聚合。 聚合物显示出高折射率，高透明度和优异的热稳定性。 它们可用作半导体工业和光学应用的介电膜，包括CMOS图像传感器中的高RI材料。

公开(公告)号：US07643717B2

公开(公告)日：2010-01-05

申请号：US10150625

申请日：2002-05-17

申请人： Juha T. Rantala ,  Arto L. T. Maaninen ,  T. Teemu T. Tormanen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

发明人： Juha T. Rantala ,  Arto L. T. Maaninen ,  T. Teemu T. Tormanen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

IPC分类号： G02B6/02 ,  H01L21/00

CPC分类号： G02B6/138 ,  G02B6/132 ,  G02B2006/12097

摘要： Waveguides are disclosed (and other devices and materials including but not limited to hybrid organic-inorganic coatings, passivation materials, glob top materials, underfill materials, materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by being formed of a novel hybrid organic-inorganic material. In one embodiment of the invention, a method for making a waveguide includes: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer comprises a hybrid organic-inorganic material—that has many desirable properties relating to stability, hydrophobicity, roughness, optical absorbance, polarization dependent loss, among others.

摘要翻译： 公开了波导（以及其他装置和材料，包括但不限于混合有机 - 无机涂层，钝化材料，球形顶材料，底部填充材料，用于IC和其它应用的材料，微透镜以及各种光学装置中的任何一种） 通过由新型杂化有机 - 无机材料形成。 在本发明的一个实施例中，制造波导的方法包括：在衬底上形成下包层; 在下包层之后形成芯层; 以及在所述芯层之后形成上包层; 其中下包层，芯层和/或上敷层包括杂化有机 - 无机材料，其具有与稳定性，疏水性，粗糙度，光吸收率，偏振相关损耗等有关的许多期望性能。

公开(公告)号：US07473650B2

公开(公告)日：2009-01-06

申请号：US11606941

申请日：2006-12-01

申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR33的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 33的化合物; 水解和冷凝R1MOR33，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。