摘要:
Waveguides are disclosed (and other devices and materials including but not limited to hydrophobic coatings, passivation materials, glob top materials, underfill materials, dielectric materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by a high hydrophobicity and high stability and, among other things. In one embodiment of the invention, a method for making a waveguide comprises: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.
摘要:
A method comprises reacting a compound of the general formula R14−mMOR3m wherein m is an integer from 2 to 4, OR3 is an alkoxy group, and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2X2+Mg, wherein X2 is Br or I; where R1 and R2 are independently selected from alkyl, alkenyl, aryl, alkynyl, or epoxy, and wherein at least one of R1 and R2 is partially or fully fluorinated; so as to make a compound of the general formula R2R14−mMOR3m−1; followed by reacting R2R14−mMOR3m−1 with a halogen or halogen compound in order to replace one or more OR3 groups with a halogen group so as to form R2R14−mMOR3m−1−nXn, where X is a halogen and n is from 1 to 3 and m
摘要翻译:一种方法包括使通式R 1〜4-mMOR 3 m的化合物(其中m为2〜4的整数),或3为烷氧基,M为选自 周期表; 与通式为R 2 X 2 + Mg的化合物,其中X 2为Br或I; 其中R 1和R 2独立地选自烷基,烯基,芳基,炔基或环氧基,并且其中R 1和R 2中的至少一个是部分或完全氟化的; 以制备通式为R 2 R 4 -OROROR 3-m-1的化合物; 然后使R 2 R 1,4-mMOR 3 m-1与卤素或卤素化合物反应,以便用卤素基团取代一个或多个OR 3以形成R 2, R 1,4-mMOR 3,m-1-n X n,其中X是卤素,n是1至3且m 是乙氧基。 如此形成的这些化合物可以进一步反应以附加另外的Rx基团,或单独或与一种或多种类似化合物水解形成分子量为500至10,000的材料,该材料可以沉积在各种底物上作为 用于波导或其他光学器件部件的涂层或沉积和图案化。
摘要:
A compound of the general formula R1R2MR4R5 is disclosed wherein R1 and R2 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1 and R2 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, wherein R4 and R5 are independently an alkoxy group, OR3, or a halogen group, X, except where M is Si, R4 and R5 are both ethoxy groups or both chlorine groups, and R1 and R2 are perfluorinated groups. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R1MR4R5R6 are also disclosed.
摘要:
Waveguides are disclosed (and other devices and materials including but not limited to hybrid organic-inorganic coatings, passivation materials, glob top materials, underfill materials, materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by being formed of a novel hybrid organic-inorganic material. In one embodiment of the invention, a method for making a waveguide includes: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer comprises a hybrid organic-inorganic material—that has many desirable properties relating to stability, hydrophobicity, roughness, optical absorbance, polarization dependent loss, among others.
摘要:
A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.
摘要:
A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit. Also disclosed is a method for making an integrated circuit comprising forming alternating areas of electrically conductive and dielectric materials, the dielectric materials formed by hydrolysing, partially or fully, one or more precursors, at least one of which having the formula (I): where R2 is a halogen, —OH, or alkoxy group, where M1 and M2 are independently a metal or metalloid, and where R1 is a fully or partially fluorinated alkyl group having from 1 to 10 carbon atoms or a fully or partially fluorinated aromatic group.
摘要:
Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability. They are useful as dielectric films for semiconductor industry and for optical applications, including high-RI materials in CMOS image sensors.
摘要:
An optical light diffuser component and a method of producing the same. The component comprises at least one substrate material with an index of refraction of n1 and at least one optical coating on the substrate with having an index of refraction of n2. The indices n1 and n2 are different. The optical light diffuser component produces uniform and diffuse light pattern from spot like light source, such as LED lamp, in terms of high optical transmission. The optical transmission is better than 90% at the visible spectrum of the light.
摘要:
A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).
摘要翻译:公开了一种用于制造集成电路的方法,其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上,其中介电材料的区域通过水解多个前体而形成,以形成由 氧化硅主链并具有与主链结合的有机取代基,并将杂化有机无机材料沉积在基材上,去除所选区域中的杂化有机 - 无机材料,以及在选定区域中沉积导电材料,其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物,其中R 1,R 2,R 3各自与Si结合,独立地为芳基,可交联基团或具有1-14个碳原子的烷基,其中R4为 选自烷氧基,酰氧基,-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法,包括:将通式(IV)的化合物与四烷氧基硅烷,三烷氧基硅烷,三氯硅烷,二烷氧基硅烷和二氯硅烷选自下列的硅烷水解: :R1R2R4MR5,其中R1,R2和R4独立地是芳基,烷基,烯基,环氧基或炔基,其中R1,R2和R4中的至少一个是完全或部分氟化的,其中M选自周期表的第14族 ,其中R 5为烷氧基,OR 3或卤素(X)。
摘要:
A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.