公开(公告)号：US08921468B2

公开(公告)日：2014-12-30

申请号：US12600621

申请日：2008-03-14

申请人： Tomoaki Hirayama ,  Takao Wada ,  Noboru Wakabayashi ,  Keiji Ikeda

发明人： Tomoaki Hirayama ,  Takao Wada ,  Noboru Wakabayashi ,  Keiji Ikeda

IPC分类号： C08L7/00 ,  C08L15/00 ,  C08L9/00 ,  B60C11/00 ,  B60C1/00 ,  C08K3/00 ,  C08C19/06 ,  C08K5/548 ,  C08L91/06

CPC分类号： C08L7/00 ,  B60C1/0016 ,  B60C1/0025 ,  B60C11/005 ,  B60C2015/0614 ,  C08C19/06 ,  C08K3/013 ,  C08K5/548 ,  C08L15/00 ,  C08L91/06 ,  Y10S152/905 ,  C08K3/0033 ,  C08L2666/08 ,  C08L2666/02

摘要： A rubber composition for a tire includes a rubber component containing at least one of a natural rubber and an epoxidized natural rubber, silica and a natural based wax, wherein the silica is contained in an amount of 10 parts by mass or more based on 100 parts by mass of the rubber component and the natural based wax is contained in an amount of 1.2% by mass or more and 2% by mass or less based on the total mass of the rubber composition for a tire, and to a tread, a side wall, a clinch and a tire using the rubber composition. A rubber composition for a base tread used to form a base tread of a tire, the rubber composition includes a rubber component composed of a diene based rubber, silica contained in an amount 20 parts by mass or more and 70 parts by mass or less based on 100 parts by mass of the rubber component consisting of a diene based rubber and a natural based wax contained in an amount of 2 parts by mass or more and 15 parts by mass or less based on 100 parts by mass of said rubber component composed of the diene based rubber, and to a base tread and a tire obtained by using the rubber composition for a base tread.

摘要翻译： 轮胎用橡胶组合物包含含有天然橡胶和环氧化天然橡胶，二氧化硅和天然蜡中的至少一种的橡胶成分，其中所述二氧化硅的含量相对于100重量份为10质量份以上 的橡胶成分和天然蜡的含量相对于轮胎用橡胶组合物的总质量为1.2质量％以上且2质量％以下，在胎面，侧面 墙壁，搭扣和使用橡胶组合物的轮胎。 一种用于形成轮胎胎面的胎面胎面用橡胶组合物，该橡胶组合物包括由二烯系橡胶构成的橡胶成分，20质量份以上的二氧化硅和70质量份以下的二氧化硅 在100质量份由二烯类橡胶和天然基蜡组成的橡胶组分的量为2质量份以上且15质量份以下的情况下，基于100质量份所述橡胶组分由以下组成： 二烯基橡胶，以及通过使用该基础胎面的橡胶组合物而获得的基底胎面和轮胎。

公开(公告)号：US20120164800A1

公开(公告)日：2012-06-28

申请号：US13336307

申请日：2011-12-23

申请人： Keiji IKEDA

发明人： Keiji IKEDA

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/66803 ,  H01L29/78 ,  H01L29/785

摘要： According to one embodiment, a method of manufacturing a semiconductor device which includes a MISFET, includes: forming a gate insulating film on a semiconductor substrate; forming a gate electrode on the gate insulating film; implanting nitrogen equal to or more than 5.0e14 atoms/cm2 and equal to or less than 1.5e15 atoms/cm2 in the semiconductor substrate by tilted ion implantation in a direction from an outside to an inside with respect to side surfaces of the gate electrode; depositing a metal film including nickel on areas in which nitrogen atoms are implanted, the areas are in a semiconductor substrate on both sides of the gate electrode; and performing first heat processing of reacting the metal film and the semiconductor substrate and forming metal semiconductor compound layers, the shapes of the layers are controlled by the nitrogen profiles of the areas.

摘要翻译： 根据一个实施例，制造包括MISFET的半导体器件的方法包括：在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 通过相对于栅电极的侧面从外侧向内侧的倾斜离子注入，在半导体衬底中注入等于或大于5.0e14原子/ cm 2且等于或小于1.5e15原子/ cm 2的氮; 在其中注入氮原子的区域上沉积包含镍的金属膜，该区域位于栅电极两侧的半导体衬底中; 并进行使金属膜与半导体基板反应并形成金属半导体化合物层的第一热处理，通过该区域的氮分布来控制各层的形状。

公开(公告)号：US20110210375A1

公开(公告)日：2011-09-01

申请号：US12888805

申请日：2010-09-23

申请人： Keiji IKEDA ,  Tsutomu Tezuka

发明人： Keiji IKEDA ,  Tsutomu Tezuka

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L29/0895 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66977 ,  H01L29/7843 ,  H01L29/78684

摘要： According to one embodiment, a semiconductor device including a tunnel FET, includes a gate electrode, which is formed on a first semiconductor layer formed of Si1-XGeX (0

摘要翻译： 根据一个实施例，包括隧道FET的半导体器件包括栅极，其通过栅极绝缘膜形成在由Si1-XGeX（0

公开(公告)号：US20110045663A1

公开(公告)日：2011-02-24

申请号：US12917381

申请日：2010-11-01

申请人： Keiji IKEDA

发明人： Keiji IKEDA

IPC分类号： H01L21/265

CPC分类号： H01L29/7839 ,  H01L21/2254 ,  H01L21/28518 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1203 ,  H01L29/16 ,  H01L29/47 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66643 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/78684 ,  Y10S438/933 ,  Y10S438/938

摘要： A field-effect transistor that increases the operation speeds of complementary field-effect transistors. Each of an nMOSFET and a pMODFET has a Ge channel and source and drain regions formed of an NiGe layer. The height of Schottky barriers formed at a junction between a channel region and the source region of the nMOSFET and at a junction between the channel region and the drain region of the nMOSFET is changed by very thin high-concentration segregation layers formed by making As atoms, Sb atoms, S atoms or the like segregate at the time of forming the NiGe layer. As a result, Schottky barrier height suitable for the nMOSFET and the pMODFET can be obtained, this being capable of realizing high-speed CMOSFETS.

摘要翻译： 增加互补场效应晶体管的操作速度的场效应晶体管。 nMOSFET和pMODFET中的每一个具有Ge沟道以及由NiGe层形成的源极和漏极区。 在nMOSFET的沟道区域和源极区域之间以及在nMOSFET的沟道区域和漏极区域之间的结点处形成的肖特基势垒的高度由非常薄的高浓度偏析层改变，该高浓度偏析层通过使As原子 ，Sb原子，S原子等在形成NiGe层时分离。 结果，可以获得适用于nMOSFET和pMODFET的肖特基势垒高度，这能够实现高速CMOSFETS。

公开(公告)号：US20100163150A1

公开(公告)日：2010-07-01

申请号：US12600621

申请日：2008-03-14

申请人： Tomoaki Hirayama ,  Takao Wada ,  Noboru Wakabayashi ,  Keiji Ikeda

发明人： Tomoaki Hirayama ,  Takao Wada ,  Noboru Wakabayashi ,  Keiji Ikeda

IPC分类号： B60C11/01 ,  C08L7/00 ,  C08L15/00 ,  C08L9/00

CPC分类号： C08L7/00 ,  B60C1/0016 ,  B60C1/0025 ,  B60C11/005 ,  B60C2015/0614 ,  C08C19/06 ,  C08K3/013 ,  C08K5/548 ,  C08L15/00 ,  C08L91/06 ,  Y10S152/905 ,  C08K3/0033 ,  C08L2666/08 ,  C08L2666/02

摘要： A rubber composition for a tire includes a rubber component containing at least one of a natural rubber and an epoxidized natural rubber, silica and a natural based wax, wherein the silica is contained in an amount of 10 parts by mass or more based on 100 parts by mass of the rubber component and the natural based wax is contained in an amount of 1.2% by mass or more and 2% by mass or less based on the total mass of the rubber composition for a tire, and to a tread, a side wall, a clinch and a tire using the rubber composition. A rubber composition for a base tread used to form a base tread of a tire, the rubber composition includes a rubber component composed of a diene based rubber, silica contained in an amount 20 parts by mass or more and 70 parts by mass or less based on 100 parts by mass of the rubber component consisting of a diene based rubber and a natural based wax contained in an amount of 2 parts by mass or more and 15 parts by mass or less based on 100 parts by mass of said rubber component composed of the diene based rubber, and to a base tread and a tire obtained by using the rubber composition for a base tread.

摘要翻译： 轮胎用橡胶组合物包含含有天然橡胶和环氧化天然橡胶，二氧化硅和天然蜡中的至少一种的橡胶成分，其中所述二氧化硅的含量相对于100重量份为10质量份以上 的橡胶成分和天然蜡的含量相对于轮胎用橡胶组合物的总质量为1.2质量％以上且2质量％以下，在胎面，侧面 墙壁，搭扣和使用橡胶组合物的轮胎。 一种用于形成轮胎胎面的胎面胎面用橡胶组合物，该橡胶组合物包括由二烯系橡胶构成的橡胶成分，20质量份以上的二氧化硅和70质量份以下的二氧化硅 在100质量份由二烯类橡胶和天然基蜡组成的橡胶组分的量为2质量份以上且15质量份以下的情况下，基于100质量份所述橡胶组分由以下组成： 二烯基橡胶，以及通过使用该基础胎面的橡胶组合物而获得的基底胎面和轮胎。

公开(公告)号：US20100025744A1

公开(公告)日：2010-02-04

申请号：US12561841

申请日：2009-09-17

申请人： Toshihiko Miyashita ,  Keiji Ikeda

发明人： Toshihiko Miyashita ,  Keiji Ikeda

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

摘要： A semiconductor device includes a gate electrode over a semiconductor substrate, a channel region provided in the semiconductor substrate below the gate electrode, and a strain generation layer configured to apply stress to the channel region, the strain generation layer being configured to apply greater stress in absolute value to the source edge of the channel region than to the drain edge of the channel region.

摘要翻译： 半导体器件包括在半导体衬底上的栅极电极，设置在栅电极下方的半导体衬底中的沟道区域和被配置为向沟道区域施加应力的应变生成层，应变发生层被配置为在 与通道区域的漏极边缘相比，沟道区源极边缘的绝对值。

公开(公告)号：US07316959B2

公开(公告)日：2008-01-08

申请号：US11004836

申请日：2004-12-07

申请人： Takashi Mimura ,  Keiji Ikeda

发明人： Takashi Mimura ,  Keiji Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/268 ,  H01L29/1054 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/7834 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78684 ,  H01L29/78687

摘要： The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

摘要翻译： 半导体器件包括形成在绝缘层16上的半导体层18，形成在半导体层上的栅电极22，其间形成有栅极绝缘膜20，形成在栅极两侧的半导体层上的源/漏区24 电极，以及在栅电极下方的区域中埋设在绝缘层16中的半导体区域14。 可以在抑制短通道效应的同时，防止载流子的表面散射和声子散射。 结果，半导体器件可以具有高移动性和高速度。

公开(公告)号：US20050059197A1

公开(公告)日：2005-03-17

申请号：US10871049

申请日：2004-06-21

申请人： Yoshimi Yamashita ,  Akira Endoh ,  Keiji Ikeda

发明人： Yoshimi Yamashita ,  Akira Endoh ,  Keiji Ikeda

IPC分类号： H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/7787

摘要： In a nitride-system semiconductor, being different from GaAs and Si, Schottky barrier heights ΦB change significantly against work functions ΦM of metals. Then, for example, on an HEMT in which a buffer layer and a barrier layer constituted by nitride-system semiconductors are sequentially formed on a substrate, and a gate electrode is formed on the barrier layer, when a metal having a relatively large work function ΦM is selected as a metal constituting the gate electrode, and the thickness of the barrier layer is adjusted so that the Schottky barrier height ΦB becomes larger as compared to a semiconductor surface potential ΦS on both sides of the gate electrode, a two-dimensional electron gas cannot exist below the gate electrode even when no recess is formed on a portion immediately beneath the gate electrode on the barrier layer, so that the enhancement operation becomes possible.

摘要翻译： 在与GaAs和Si不同的氮化物系半导体中，肖特基势垒高度PhiB相对于金属的PhiM的功函数显着变化。 然后，例如，在衬底上依次形成由氮化物系半导体构成的缓冲层和阻挡层的HEMT，在阻挡层上形成栅电极的情况下，当具有较大功函数的金属 选择PhiM作为构成栅电极的金属，并且调节阻挡层的厚度，使得肖特基势垒高度PhiB与栅电极两侧的半导体表面电位PhiS相比变大，二维电子 即使在阻挡层上的栅电极正下方的部分上没有形成凹部，也不能在栅电极下方存在气体，从而可以进行增强操作。

公开(公告)号：US08394690B2

公开(公告)日：2013-03-12

申请号：US13546222

申请日：2012-07-11

申请人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

发明人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

IPC分类号： H01L21/336

CPC分类号： H01L29/7853 ,  H01L29/045 ,  H01L29/66795

摘要： According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0

摘要翻译： 根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0

公开(公告)号：US08242568B2

公开(公告)日：2012-08-14

申请号：US12888674

申请日：2010-09-23

申请人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

发明人： Keiji Ikeda ,  Tsutomu Tezuka ,  Yoshihiko Moriyama

IPC分类号： H01L29/76

CPC分类号： H01L29/7853 ,  H01L29/045 ,  H01L29/66795

摘要： According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0

摘要翻译： 根据一个实施例，具有Ge或SiGe鳍结构的半导体器件包括在Si衬底的表面区域上沿着一个方向形成的凸形有源区，Si1-xGex的缓冲层（0