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公开(公告)号：US06573504B2
公开(公告)日：2003-06-03
申请号：US09819596
申请日：2001-03-29
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J520
CPC分类号： H01L31/103 , G01J5/10 , H01L27/1463 , H01L27/14649 , H01L27/14683 , H01L31/024 , H01L31/035281 , Y02E10/50
摘要： An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.
摘要翻译： 本发明的目的是提供一种高灵敏度红外传感器。 根据本发明，与传统结构相比，用于支撑腔结构中的传感器部分的支撑构件形成为非常薄，支撑构件的截面积显着减小，导热性可以显着降低， 结果，可以获得具有非常高的灵敏度的红外线传感器。 此外，根据本发明，由于蚀刻了支撑构件区域的绝缘层，并且在该区域中埋设牺牲硅膜，所以用于形成支撑腿的绝缘层RIE的纵横比显着降低。 便于制造过程，作为副作用，支撑腿的截面积进一步减小，并且可以进一步提高红外线传感器的灵敏度。
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公开(公告)号：US06504153B1
公开(公告)日：2003-01-07
申请号：US09624996
申请日：2000-07-25
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： H01L2714
CPC分类号： H01L27/14649 , H01L31/03529 , Y02E10/50
摘要： In a semiconductor infrared image pick-up system, thermo-sensing sections arrayed in a matrix format are supported by a supporting section above a base substrate in a floating state such that they are thermally independent of the base substrate and of each other. Each thermo-sensing section includes first and second semiconductor layers stacked on an insulating layer to form a pn junction. The second layer is in contact with the first layer via an irregular interface to enlarge the surface area of the pn junction. An infrared image is picked up with reference to a change in electric current flowing through the pn junctions, which is caused when the thermo-sensing sections are irradiated with infrared rays in a state where forward bias voltage is applied to the pn junctions.
摘要翻译： 在半导体红外图像拾取系统中，以矩阵形式排列的热感测部分以浮动状态的基底基板上方的支撑部分支撑，使得它们与基底基板和彼此热独立。 每个热敏感部分包括堆叠在绝缘层上以形成pn结的第一和第二半导体层。 第二层通过不规则界面与第一层接触，以扩大pn结的表面积。 参照流过pn结的电流的变化来拾取红外图像，当在pn结处施加正向偏置电压的状态下，当感温部分被红外线照射时引起。
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23.发明授权Multi-wavelength semiconductor image sensor and method of manufacturing the same 失效多波长半导体图像传感器及其制造方法公开(公告)号：US06465860B2
公开(公告)日：2002-10-15
申请号：US09386294
申请日：1999-08-31
申请人： Keitaro Shigenaka , Fumio Nakata
发明人： Keitaro Shigenaka , Fumio Nakata
IPC分类号： H01L310296
CPC分类号： H01L31/1032 , H01L27/14652
摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
摘要翻译： 多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.7Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，连接到这些n +区中的每一个的铟电极和地面 电极连接到光吸收层，半导体隔离层与光吸收层电隔离。
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24.发明授权
公开(公告)号：US5641973A
公开(公告)日：1997-06-24
申请号：US527582
申请日：1995-09-13
IPC分类号： H01L27/14 , H01L27/148 , H01L31/032 , H01L31/00
CPC分类号： H01L37/00 , H01L27/148 , H01L31/032
摘要： A semiconductor photoelectric converting device and an imaging device using such semiconductor photoelectric converting devices are provided according to the present invention, the semiconductor photoelectric converting device including an electric charge transfer area provided in a surface portion of a semiconductor substrate and a light-receiving area formed of a piezoelectric material, electrically connected to the electric charge transfer area and provided in contact with the semiconductor substrate, in which electric charges generated by a piezoelectric effect produced by a strain resulting from heat evolved upon the falling of light onto the light-receiving area are conducted to the charge transfer area.
摘要翻译： 根据本发明，提供一种半导体光电转换装置和使用这种半导体光电转换装置的成像装置，该半导体光电转换装置包括设置在半导体基板的表面部分中的电荷转移区域和形成的光接收区域 压电材料电连接到电荷转移区域并且与半导体衬底接触地提供，其中由通过由光产生的应变产生的压电效应产生的电荷在光入射到光接收区域 被传送到电荷转移区域。
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公开(公告)号：US07172920B2
公开(公告)日：2007-02-06
申请号：US11168423
申请日：2005-06-29
IPC分类号： H01L21/00
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译： 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。
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26.发明授权Sensor device which detects a physical change amount or a chemical change amount 失效检测物理变化量或化学变化量的传感器装置公开(公告)号：US07145142B2
公开(公告)日：2006-12-05
申请号：US10306160
申请日：2002-11-29
IPC分类号： G01J5/24 , H01L27/14 , H01L31/105 , H03K3/42 , C12Q1/68
CPC分类号： G01J5/24 , C12Q1/68 , C12Q1/6837 , G01J5/023 , G01J5/20 , C12Q2565/607
摘要： A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.
摘要翻译： 传感器装置包括其中布置有红外传感器的传感器阵列和连接到传感器阵列的输出信号线的检测电路。 检测电路包括具有选择性驱动的充电电路的电容器，检测并放大流向输出信号线的传感器电流的变化的读出放大器电路，将输出电流从 感测放大器电路变为电压，放电电路由电流 - 电压转换电路的输出电压控制以对电容器进行放电;以及输出电路，其输出电容器的端子电压。
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公开(公告)号：US07122798B2
公开(公告)日：2006-10-17
申请号：US10753386
申请日：2004-01-09
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： G01J5/00
摘要： An infrared image sensor comprises, a substrate having an image area on which infrared radiation is made incident and an non-image area out of the image area, plural first heat-sensitive parts arranged in rows and columns on the image area, plural second heat-sensitive parts provided in the non-image area so as to correspond to the respective rows of the first heat-sensitive parts in the image area with the same thermoelectric conversion function as that of the first heat-sensitive parts, a bias current supply circuit supplying a bias current to the first heat-sensitive parts and second heat-sensitive parts, an output circuit outputting an electric signal of the first heat-sensitive parts, and a bias current control circuit controlling the bias current to be fed to the first heat-sensitive parts, according to an electric signal of the second heat-sensitive parts.
摘要翻译： 红外图像传感器包括具有入射红外线的图像区域和图像区域中的非图像区域的基板，在图像区域上排列成行和列的多个第一热敏部件，多个第二热量 设置在所述非图像区域中的与所述图像区域中的所述第一热敏部件的各行对应的感光部件具有与所述第一热敏部件相同的热电转换功能，偏置电流供给电路 向第一热敏部件和第二热敏部件提供偏置电流;输出电路，输出第一热敏部件的电信号;以及偏置电流控制电路，控制要馈送到第一热敏部件的第一热量 敏感部件，根据第二热敏部件的电信号。
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公开(公告)号：US07087900B2
公开(公告)日：2006-08-08
申请号：US10957623
申请日：2004-10-05
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
CPC分类号： H01L27/14649 , H04N5/33
摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.
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公开(公告)号：US06974953B2
公开(公告)日：2005-12-13
申请号：US10960988
申请日：2004-10-12
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J1/02 , G01J5/20 , G01J5/24 , H01L21/28 , H01L27/14 , H01L27/146 , H01L27/16 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/09 , H01L37/02
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.
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公开(公告)号：US20050061980A1
公开(公告)日：2005-03-24
申请号：US10960988
申请日：2004-10-12
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J1/02 , G01J5/20 , G01J5/24 , H01L21/28 , H01L27/14 , H01L27/146 , H01L27/16 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/09 , H01L37/02
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.
摘要翻译： 一种用于支撑在半导体衬底上的腔中的支撑束线，包括用于吸收入射红外线并将其转换成热的红外吸收部分的红外检测像素和用于转换由热量引起的温度变化的热电转换部分 在红外线吸收部分中产生的电信号由与外围电路中使用的镶嵌金属栅极MOS晶体管的栅极相同的一层上的镶嵌金属形成。 支撑梁线包括具有U形横截面的导体线，其中填充有金属。
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