公开(公告)号：US20140084585A1

公开(公告)日：2014-03-27

申请号：US14116353

申请日：2011-07-21

申请人： Makoto Wada ,  Koji Katsuta

发明人： Makoto Wada ,  Koji Katsuta

IPC分类号： F15B21/04 ,  F16L17/06

CPC分类号： F15B21/048 ,  F16L17/06 ,  F16L23/04

摘要： In relation to fluid pressure devices, a connection apparatus, by which a filter, a regulator and a lubricator that constitute a fluid pressure unit are mutually connected, is equipped with a base member having a hole therein, a pair of first and second fastening members mounted respectively on one side surface and another side surface of the base member, and first and second holders in which the first and second fastening members are retained. Additionally, the first and second holders engage respectively with engagement projections of the filter, the regulator and the lubricator, and first and second nuts are screw-engaged with the first and second fastening members, whereby the fluid pressure devices are connected together through the first and second holders.

摘要翻译： 关于流体压力装置，构成流体压力单元的过滤器，调节器和润滑器相互连接的连接装置配备有在其中具有孔的基座构件，一对第一和第二紧固构件 分别安装在基部构件的一个侧面和另一个侧面上，第一和第二保持件保持第一和第二紧固构件。 此外，第一和第二保持器分别接合过滤器，调节器和润滑器的接合突起，并且第一和第二螺母与第一和第二紧固构件螺纹接合，由此流体压力装置通过第一和第二紧固构件连接在一起 和第二个持有人。

公开(公告)号：US08482126B2

公开(公告)日：2013-07-09

申请号：US13224929

申请日：2011-09-02

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。

公开(公告)号：US08358008B2

公开(公告)日：2013-01-22

申请号：US12726520

申请日：2010-03-18

申请人： Makoto Wada ,  Noriaki Matsunaga ,  Yosuke Akimoto

发明人： Makoto Wada ,  Noriaki Matsunaga ,  Yosuke Akimoto

IPC分类号： H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.

摘要翻译： 根据一个实施例的半导体器件包括：半导体衬底; 绝缘膜，设置在所述半导体基板上并且包含布线沟槽; 第一催化剂层，直接地或经由布线沟槽的侧表面和底表面上的另一个构件提供; 以及设置在所述布线沟槽中以沿着所述布线沟槽的侧面和底面的第一石墨烯层，所述第一石墨烯层设置在所述第一催化剂层上以与所述第一催化剂层接触。

公开(公告)号：US20120080796A1

公开(公告)日：2012-04-05

申请号：US13233312

申请日：2011-09-15

申请人： Makoto Wada ,  Yuichi Yamazaki

发明人： Makoto Wada ,  Yuichi Yamazaki

IPC分类号： H01L23/48 ,  B82Y99/00

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a device includes an insulating layer with a first trench, a first interconnect layer in the first trench, the first interconnect layer including copper and includes a concave portion, and a first graphene sheet on an inner surface of the concave portion.

摘要翻译： 根据一个实施例，一种器件包括具有第一沟槽的绝缘层，第一沟槽中的第一互连层，包括铜的第一互连层，并包括凹部，以及在凹部的内表面上的第一石墨烯片 。

公开(公告)号：US20120080661A1

公开(公告)日：2012-04-05

申请号：US13216435

申请日：2011-08-24

申请人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita ,  Atsuko Sakata

发明人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita ,  Atsuko Sakata

IPC分类号： H01L29/15 ,  H01L21/441

CPC分类号： H01L21/76885 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a graphene interconnection includes an insulating film, a catalyst film, and a graphene layer. An insulating film includes an interconnection trench. A catalyst film is formed in the interconnection trench and filling at least a portion of the interconnection trench. A graphene layer is formed on the catalyst film in the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to a bottom surface of the interconnection trench.

摘要翻译： 根据一个实施例，石墨烯互连包括绝缘膜，催化剂膜和石墨烯层。 绝缘膜包括互连沟槽。 在互连沟槽中形成催化剂膜并填充互连沟槽的至少一部分。 在互连沟槽中的催化剂膜上形成石墨烯层，并且包括沿垂直于互连沟槽的底表面的方向堆叠的石墨烯片。

公开(公告)号：US20120049370A1

公开(公告)日：2012-03-01

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L23/522 ,  H01L21/768 ,  B82Y99/00

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US20110189849A1

公开(公告)日：2011-08-04

申请号：US13087026

申请日：2011-04-14

申请人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/768

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US07989880B2

公开(公告)日：2011-08-02

申请号：US12615598

申请日：2009-11-10

申请人： Makoto Wada ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Tsuneo Uenaka

发明人： Makoto Wada ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Tsuneo Uenaka

IPC分类号： H01L29/76

CPC分类号： H01L23/481 ,  H01L21/76808 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

摘要翻译： 非易失性半导体存储器件包括存储器串和布线。 存储器串包括半导体层，电荷存储层和多个第一导电层。 多个第一导电层包括形成为阶梯形状的阶梯部分，使得多个第一导电层的端部的位置彼此不同。 布线包括从包括台阶部分的第一导电层的上表面向上延伸的多个第二导电层。 多个第二导电层形成为使得其上端与平行于基板的表面对齐，并且其直径从其上端向下端减小。 多个第二导电层形成为使得其在垂直方向上的长度越大，其上端的直径越大。

公开(公告)号：US20100145515A1

公开(公告)日：2010-06-10

申请号：US12538167

申请日：2009-08-10

申请人： Mitsuaki NAKANISHI ,  Makoto WADA

发明人： Mitsuaki NAKANISHI ,  Makoto WADA

IPC分类号： G05B19/04

CPC分类号： B25J9/1676 ,  G05B2219/42288 ,  G05B2219/49162 ,  G05B2219/50103 ,  G05B2219/50112

摘要： A robot system includes a robot arm driven by a motor, a collision detector that detects a collision between the robot arm and an obstacle, which is provided on the robot arm, and a stopping method selector that controls the robot arm by selecting any one of all stopping methods on the basis of the information obtained by the collision detector, thereby selecting a stopping method in accordance with the status of the collision.

摘要翻译： 机器人系统包括由马达驱动的机器人手臂，检测机器人手臂与设置在机器人手臂上的障碍物之间的碰撞的碰撞检测器，以及通过选择任意一个来控制机器人手臂的停止方法选择器 基于由碰撞检测器获得的信息的所有停止方法，从而根据碰撞状态选择停止方法。

公开(公告)号：US20090085214A1

公开(公告)日：2009-04-02

申请号：US12239236

申请日：2008-09-26

申请人： Makoto WADA ,  Kazuyuki Higashi

发明人： Makoto WADA ,  Kazuyuki Higashi

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L23/5226 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member, a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.

摘要翻译： 根据一个实施例的半导体器件包括：设置有半导体元件的半导体衬底; 形成在所述半导体衬底上的第一导电构件; 形成在与所述第一导电构件相同的层上的第一绝缘膜; 形成为与第一导电构件的上表面的一部分接触的第二导电构件，形成在第一绝缘膜上以与第一导电构件的上表面的一部分接触的第二绝缘膜，以及 包括除Si之外的第一绝缘膜中包含的元素中的至少一种元素; 以及形成在所述第二绝缘膜上以与所述第二导电构件的侧表面的一部分接触并且具有位于所述第二导电构件的上表面下方的上边缘的蚀刻阻挡膜。