摘要:
According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.
摘要:
According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.
摘要:
According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要:
According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要:
A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.
摘要:
A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.
摘要:
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
摘要:
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
摘要:
A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要:
A quartz window can withstand a pressure difference between an atmospheric pressure and a negative pressure environment created in a thermal processing apparatus that applies a thermal process to a target object under the negative pressure environment. The quartz window is adapted to be positioned between a radiation heat source and an object to be subjected to a heat treatment in the process chamber. The quartz window has a plate made of quartz and a plurality of ribs formed on the plate so as to reinforce the plate.