公开(公告)号：US08669698B2

公开(公告)日：2014-03-11

申请号：US13598454

申请日：2012-08-29

申请人： Miyoko Shimada ,  Akhiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideto Furuyama ,  Yoshiaki Sugizaki

发明人： Miyoko Shimada ,  Akhiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideto Furuyama ,  Yoshiaki Sugizaki

IPC分类号： H01L33/00 ,  H01J1/62

CPC分类号： H01L33/501 ,  H01L2933/0091

摘要： According to an embodiment, a wavelength converter includes a resin allowing light emitted from a light source to pass through, a plurality of particle-shaped fluorescent substances dispersed in the resin, and fillers dispersed in the resin with a particle diameter smaller than the fluorescent substance. The fluorescent substances absorb the light emitted from the light source and emits fluorescence having a wavelength different from a wavelength of the light emitted from the light source; and a distribution of the fillers has higher density near the fluorescent substance than a density at a middle position between the fluorescent substances adjacent to each other.

摘要翻译： 根据实施例，波长转换器包括允许从光源发射的光通过的树脂，分散在树脂中的多个颗粒状荧光物质和分散在粒径小于荧光物质的树脂中的填料 。 荧光物质吸收从光源发射的光并发射波长不同于从光源发出的光的波长的荧光; 并且填充物的分布在荧光物质附近具有比在彼此相邻的荧光物质之间的中间位置处的密度更高的密度。

公开(公告)号：US20130285536A1

公开(公告)日：2013-10-31

申请号：US13598454

申请日：2012-08-29

申请人： Miyoko SHIMADA ,  Akhiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideto Furuyama ,  Yoshiaki Sugizaki

发明人： Miyoko SHIMADA ,  Akhiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideto Furuyama ,  Yoshiaki Sugizaki

IPC分类号： H05B33/12

CPC分类号： H01L33/501 ,  H01L2933/0091

摘要： According to an embodiment, a wavelength converter includes a resin allowing light emitted from a light source to pass through, a plurality of particle-shaped fluorescent substances dispersed in the resin, and fillers dispersed in the resin with a particle diameter smaller than the fluorescent substance. The fluorescent substances absorb the light emitted from the light source and emits fluorescence having a wavelength different from a wavelength of the light emitted from the light source; and a distribution of the fillers has higher density near the fluorescent substance than a density at a middle position between the fluorescent substances adjacent to each other.

摘要翻译： 根据实施例，波长转换器包括允许从光源发射的光通过的树脂，分散在树脂中的多个颗粒状荧光物质和分散在粒径小于荧光物质的树脂中的填料 。 荧光物质吸收从光源发射的光并发射波长不同于从光源发出的光的波长的荧光; 并且填充物的分布在荧光物质附近具有比在彼此相邻的荧光物质之间的中间位置处的密度更高的密度。

公开(公告)号：US20130285091A1

公开(公告)日：2013-10-31

申请号：US13599892

申请日：2012-08-30

申请人： Yosuke Akimoto ,  Miyoko Shimada ,  Akihiro Kojima ,  Hideyuki Tomizawa ,  Yoshiaki Sugizaki ,  Hideto Furuyama

发明人： Yosuke Akimoto ,  Miyoko Shimada ,  Akihiro Kojima ,  Hideyuki Tomizawa ,  Yoshiaki Sugizaki ,  Hideto Furuyama

IPC分类号： H01L33/50

CPC分类号： H01L33/44 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/46 ,  H01L33/505 ,  H01L2933/0016

摘要： According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances.

摘要翻译： 根据实施例，半导体发光器件的制造方法包括在半导体层的第一面上形成荧光体层并在荧光物质层的侧面形成遮光膜的工序。 荧光物质层包括分散在树脂中的树脂和荧光物质，并且在与半导体层的第一面相反的一侧具有发光面，以及以90度的角连接到发光面的侧面， 更多地在发光面和侧面之间。 遮光膜屏蔽从半导体层中包含的发光层发射的光和从荧光物质辐射的光。

公开(公告)号：US20130285077A1

公开(公告)日：2013-10-31

申请号：US13597055

申请日：2012-08-28

申请人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA

发明人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA

IPC分类号： H01L27/15

CPC分类号： H01L33/42 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/486 ,  H01L33/507 ,  H01L33/508 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0091

摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.

公开(公告)号：US06746969B2

公开(公告)日：2004-06-08

申请号：US09982003

申请日：2001-10-19

申请人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

发明人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

IPC分类号： H01L2131

CPC分类号： H01L21/02351 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76834

摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

摘要翻译： 一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体 所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度 的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

公开(公告)号：US06703302B2

公开(公告)日：2004-03-09

申请号：US10141578

申请日：2002-05-09

申请人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

发明人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC分类号： H01L214763

CPC分类号： H01L21/76825 ,  H01L21/76828

摘要： A method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低介电常数 绝缘膜在加热期间或之后至促进Si原子的键形成的气体。