中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

104 records (took 0.02 seconds)

    Wafer level packaging cap and fabrication method thereof
    21.
    发明申请
    Wafer level packaging cap and fabrication method thereof 有权
    晶圆级封装盖及其制造方法

    公开(公告)号：US20070085195A1

    公开(公告)日：2007-04-19

    申请号：US11365838

    申请日：2006-03-02

    Applicant: Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    Inventor： Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    IPC: H01L23/12

    CPC classification number: B81C1/00301 ,  B81B2207/095 ,  H01L21/4817 ,  H01L21/50 ,  H01L2924/16235

    Abstract: A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

    Abstract translation: 提供了一种用于在其上覆盖器件晶片的晶片级封装盖及其制造方法。 该方法包括在晶片上形成多个连接槽的操作，在连接槽上形成种子层，通过用金属材料填充连接槽来形成连接部分，在晶片的顶表面上形成电极盖 连接到连接部分，将支撑膜与其上形成有盖垫的晶片的顶表面接合，在晶片的底表面上形成空腔，以通过空腔露出连接部分，并在其上形成金属线 晶片的底表面电连接到连接部分。

    Monolithic duplexer and fabrication method thereof
    22.
    发明申请
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器及其制造方法

    公开(公告)号：US20070024391A1

    公开(公告)日：2007-02-01

    申请号：US11392624

    申请日：2006-03-30

    Applicant: Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    Inventor： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    IPC: H03H7/46

    CPC classification number: H03H3/02 ,  H03H9/0571 ,  H03H9/706

    Abstract: A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    Abstract translation: 一种单片双工器及其制造方法。 单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面 元素。 还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。 第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。 通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。 第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

    Electrostatic RF MEMS switches
    23.
    发明授权
    Electrostatic RF MEMS switches 有权
    静电RF MEMS开关

    公开(公告)号：US07122942B2

    公开(公告)日：2006-10-17

    申请号：US10951612

    申请日：2004-09-29

    Applicant: In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    Inventor： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    IPC: H01L41/08

    CPC classification number: H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    Abstract: A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    Abstract translation: 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

    Method of forming a via hole through a glass wafer
    24.
    发明授权
    Method of forming a via hole through a glass wafer 有权
    通过玻璃晶片形成通孔的方法

    公开(公告)号：US07084073B2

    公开(公告)日：2006-08-01

    申请号：US10681217

    申请日：2003-10-09

    Applicant: Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    Inventor： Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    IPC: H01L21/302

    CPC classification number: B81C1/00087 ,  H01L21/486 ,  H01L23/13 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.

    Abstract translation: 通过玻璃晶片形成通孔的方法包括在玻璃晶片的外表面上沉积材料层，该材料层的选择比率高于玻璃晶片的选择比，在玻璃晶片的一侧上形成通孔图案部分 所述材料层进行蚀刻所述通路图案部分以形成预备通孔的第一蚀刻，消除在形成所述通路图案部分中使用的剩余图案材料，进行第二蚀刻，其中所述预通孔 被蚀刻以形成具有光滑表面并延伸穿过玻璃晶片的通孔，并且消除材料层。 根据本发明的方法能够通过玻璃晶片形成通孔，而不会形成底切或微小的裂缝，从而提高MEMS元件的成品率和可靠性。

    Biomolecule chip and fabrication method thereof
    25.
    发明申请
    Biomolecule chip and fabrication method thereof 有权
    生物分子芯片及其制造方法

    公开(公告)号：US20060154242A1

    公开(公告)日：2006-07-13

    申请号：US11329240

    申请日：2006-01-10

    Applicant: Young-il Kim ,  Moon-chul Lee ,  Jung-ho Kang ,  Tae-sik Park

    Inventor： Young-il Kim ,  Moon-chul Lee ,  Jung-ho Kang ,  Tae-sik Park

    IPC: C12Q1/70 ,  C12Q1/68 ,  G01N33/53 ,  H01L21/00

    CPC classification number: G01N33/544

    Abstract: Disclosed is a biomolecule chip and a fabrication method thereof The biomolecule chip of the invention includes: a substrate; an insulating layer formed on the substrate; an adhesive layer formed on the insulating layer; a seed layer formed on the adhesive layer; an opening patterned at a predetermined location within the adhesive layer, the seed layer and the electroplating layer; and a biomolecule immobilized layer formed on the electroplating layer, the electroplating layer comprising a plasma-treated electroplating layer prior to the formation of the biomolecule immobilized layer. Accordingly, the immobilization of biomolecules onto the surface can be done more effectively by modifying the surface of the substrate in favor of biomolecules.

    Abstract translation: 公开了一种生物分子芯片及其制造方法。本发明的生物分子芯片包括：基板; 形成在所述基板上的绝缘层; 形成在所述绝缘层上的粘合剂层; 形成在粘合剂层上的种子层; 在粘合剂层内的预定位置图案化的开口，种子层和电镀层; 以及形成在所述电镀层上的生物分子固定层，所述电镀层在形成所述生物分子固定化层之前包含等离子体处理的电镀层。 因此，通过改变基质表面有利于生物分子，可以更有效地进行生物分子固定在表面上。

    Bio-molecules detecting apparatus using electromagnetic induction and detecting method using the same
    27.
    发明申请
    Bio-molecules detecting apparatus using electromagnetic induction and detecting method using the same 有权
    使用电磁感应的生物分子检测装置及使用其的检测方法

    公开(公告)号：US20060019299A1

    公开(公告)日：2006-01-26

    申请号：US11184894

    申请日：2005-07-20

    Applicant: Jung-ho Kang ,  Sung-hee Lee ,  Young-il Kim ,  Moon-chul Lee ,  Tae-sik Park

    Inventor： Jung-ho Kang ,  Sung-hee Lee ,  Young-il Kim ,  Moon-chul Lee ,  Tae-sik Park

    IPC: C12Q1/68 ,  C12M1/34

    CPC classification number: G01N27/3276 ,  G01N29/036

    Abstract: Provided are a bio-molecules detecting apparatus using electromagnetic induction and a detecting method using the same. An exemplary apparatus includes: a cantilever of which one end is fixed and the other end is set up to be movable; a first metal formed on a plane of the cantilever and receiving a signal; a bio chip formed in the first metal and having probe biomolecules for searching particular information on a sample to be analyzed; an electromagnetic inductor configured to form a magnetic field; a signal source for applying the signal to the first metal; and a detector for measuring signal values of the first metal before and after the biomolecule is coupled with the sample. The apparatus detects the bio-couple by converting a change in mechanical properties before and after the bio-coupling based on electromagnetic induction to detect a bio-couple.

    Abstract translation: 提供了使用电磁感应的生物分子检测装置和使用其的检测方法。 一种示例性装置包括：其一端被固定并且另一端被设置为可移动的悬臂; 形成在悬臂的平面上并接收信号的第一金属; 在第一金属中形成的生物芯片，并具有用于搜索待分析样品的特定信息的探针生物分子; 构造成形成磁场的电磁感应器; 用于将信号施加到第一金属的信号源; 以及用于测量生物分子之前和之后第一金属的信号值与检测器结合的检测器。 该装置通过基于电磁感应转换生物耦合之前和之后的机械特性的变化来检测生物耦合，以检测生物耦合。

    Electrostatic RF MEMS switches
    28.
    发明申请
    Electrostatic RF MEMS switches 有权
    静电RF MEMS开关

    公开(公告)号：US20050040486A1

    公开(公告)日：2005-02-24

    申请号：US10951612

    申请日：2004-09-29

    Applicant: In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    Inventor： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

    IPC: B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L29/417 ,  H01L41/09 ,  H01P1/12 ,  H01L21/76

    CPC classification number: H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

    Abstract: A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    Abstract translation: 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

Patent Agency Ranking