公开(公告)号：US20100085764A1

公开(公告)日：2010-04-08

申请号：US12285389

申请日：2008-10-03

Applicant: Ping-Han Chuang

Inventor： Ping-Han Chuang

IPC: F21V7/00 ,  F21V5/00

CPC classification number: F21V5/00 ,  F21S6/005 ,  F21S8/08 ,  F21V7/0008 ,  F21V7/0091 ,  F24S23/00 ,  F24S23/30 ,  G02B19/0028 ,  G02B19/0033 ,  G02B19/0042 ,  G02B19/0047 ,  Y02B20/72 ,  Y02E10/44

Abstract: Practical for use to make a road divider/reflector or a solar collector, a light distribution panel is disclosed to include four faces that can be planar or arched faces and constitute a light distribution curve to control the moving direction of light. When used in a lamp, light is evenly distributed onto the expected illumination area, avoiding formation of Gauss distribution and providing broad area illumination. When used as a road reflector, the light distribution panel provides excellent driving safety effect. When used in a solar collector system, the light distribution panel collects a wide range of incident light.

Abstract translation: 公开了用于制造道路分隔器/反射器或太阳能收集器的配光面板，其包括可以是平面或拱形面的四个面，并且构成控制光的移动方向的光分布曲线。 当在灯中使用时，光均匀地分布在预期的照明区域上，避免形成高斯分布并提供广阔的面积照明。 配光板用作道路反射镜时，可提供良好的驾驶安全性。 当用于太阳能收集器系统时，配光板收集各种入射光。

公开(公告)号：US20090317957A1

公开(公告)日：2009-12-24

申请号：US12552352

申请日：2009-09-02

Applicant: Roland Hampp ,  Alois Gutmann ,  Jin-Ping Han ,  O Sung Kwon

Inventor： Roland Hampp ,  Alois Gutmann ,  Jin-Ping Han ,  O Sung Kwon

IPC: H01L21/762 ,  H01L21/336

CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7846

Abstract: A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.

Abstract translation: 在所提供的半导体本体的表面中形成沟槽。 在沟槽中沉积氧化物，并且在氧化物上沉积帽，其中帽和氧化物的组合在半导体本体上赋予机械应力。

公开(公告)号：US20090289379A1

公开(公告)日：2009-11-26

申请号：US12125238

申请日：2008-05-22

Applicant: Jin-Ping Han ,  Jong Ho Yang ,  Chung Woh Lai ,  Henry Utomo

Inventor： Jin-Ping Han ,  Jong Ho Yang ,  Chung Woh Lai ,  Henry Utomo

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/94 ,  H01L21/20 ,  H01L29/76 ,  H01L21/36 ,  H01L31/00

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636

Abstract: Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material.

Abstract translation: 公开了制造半导体器件的方法及其结构。 在一个实施例中，制造半导体器件的方法包括在工件的第一区域和第二区域中形成凹陷。 工件的第一区域被掩蔽，并且工件的第二区域中的凹部填充有第一半导体材料。 工件的第二区域被掩蔽，并且工件的第一区域中的凹部填充有第二半导体材料。

公开(公告)号：US20090039442A1

公开(公告)日：2009-02-12

申请号：US11834398

申请日：2007-08-06

Applicant: Jin-Ping Han ,  Thomas W. Dyer ,  Henry Utomo ,  Rajendran Krishnasamy

Inventor： Jin-Ping Han ,  Thomas W. Dyer ,  Henry Utomo ,  Rajendran Krishnasamy

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/762

CPC classification number: H01L29/6656 ,  H01L21/76232 ,  H01L21/823481 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming at least one isolation structure within the semiconductor wafer, and forming at least one feature over the semiconductor wafer. A top portion of the at least one isolation structure is removed, and a liner is formed over the semiconductor wafer, the at least one feature, and the at least one isolation structure. A fill material is formed over the liner. The fill material and the liner are removed from over at least a portion of a top surface of the semiconductor wafer.

Abstract translation: 公开了半导体器件及其制造方法。 在优选实施例中，制造半导体器件的方法包括提供半导体晶片，在半导体晶片内形成至少一个隔离结构，并在半导体晶片上形成至少一个特征。 移除所述至少一个隔离结构的顶部，并且在所述半导体晶片，所述至少一个特征以及所述至少一个隔离结构之上形成衬垫。 在衬套上形成填充材料。 填充材料和衬垫从半导体晶片的顶表面的至少一部分上方被去除。

公开(公告)号：US20080315267A1

公开(公告)日：2008-12-25

申请号：US11766234

申请日：2007-06-21

Applicant: Roland Hampp ,  Alois Gutmann ,  Jin-Ping Han ,  O Sung Kwon

Inventor： Roland Hampp ,  Alois Gutmann ,  Jin-Ping Han ,  O Sung Kwon

IPC: H01L29/94 ,  H01L21/76 ,  H01L29/06

CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7846

Abstract: A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.

Abstract translation: 在所提供的半导体本体的表面中形成沟槽。 在沟槽中沉积氧化物，并且在氧化物上沉积帽，其中帽和氧化物的组合在半导体本体上赋予机械应力。

公开(公告)号：US20080017936A1

公开(公告)日：2008-01-24

申请号：US11477707

申请日：2006-06-29

Applicant: Douglas A. Buchanan ,  Eduard A. Cartier ,  Kevin K. Chan ,  Leland Chang ,  Christopher P. D'Emic ,  Martin M. Frank ,  Evgeni Gusev ,  Jin-Ping Han ,  Rajarao Jammy ,  Vamsi K. Paruchuri ,  Sufi Zafar

Inventor： Douglas A. Buchanan ,  Eduard A. Cartier ,  Kevin K. Chan ,  Leland Chang ,  Christopher P. D'Emic ,  Martin M. Frank ,  Evgeni Gusev ,  Jin-Ping Han ,  Rajarao Jammy ,  Vamsi K. Paruchuri ,  Sufi Zafar

IPC: H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC classification number: H01L21/823857 ,  H01L21/28167 ,  H01L21/28194 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

Abstract: A semiconductor structure, particularly a gate stack, useful in field effect transistors (FETs) in which the threshold voltage thereof is controlled by introducing a fixed spatial distribution of electric charge density to the gate dielectric material and a method of forming the same are provided. nFETs and/or pFETs structures are disclosed. In accordance with the present invention, the fixed spatial distribution of electric charge density of the gate stack or FET denotes an electrical charge density that occupies space which remains substantially constant as a function of time under device operation conditions and is non-zero at least at one location within the dielectric material or at its interface with the channel, gate electrode, spacer, or any other structural elements of the device.

Abstract translation: 提供了一种半导体结构，特别是栅极堆叠，其中通过向栅极电介质材料引入电荷密度的固定空间分布来控制其阈值电压的场效应晶体管（FET）及其形成方法。 公开了nFET和/或pFET结构。 根据本发明，栅极堆叠或FET的电荷密度的固定空间分布表示占空间的电荷密度，其在器件操作条件下作为时间的函数保持基本上恒定，并且至少在 电介质材料内的一个位置，或其与沟道，栅电极，间隔物或器件的任何其它结构元件的界面。

公开(公告)号：US20070272618A1

公开(公告)日：2007-11-29

申请号：US10569967

申请日：2004-08-27

Applicant: Shequan Gou ,  Jianwen Da ,  Yougui Zhang ,  Ping Han ,  Jingyi Zhang

Inventor： Shequan Gou ,  Jianwen Da ,  Yougui Zhang ,  Ping Han ,  Jingyi Zhang

IPC: B01D21/01

CPC classification number: C10G33/06 ,  B01D17/0208 ,  B01D17/04 ,  B01D17/06 ,  C02F1/36 ,  C02F1/40 ,  C02F2101/325

Abstract: A method for demulsifying water-oil emulsions through ultrasonic action, comprises a step of making the water-oil emulsions flow through at least one ultrasonic acting region in a flow direction, wherein: within the ultrasonic acting region, a concurrent ultrasonic wave whose traveling direction is the same as the flow direction of the water-oil emulsions is generated by at least a one first ultrasonic transducer provided at the upstream end of the ultrasonic acting region, and at same time, a countercurrent ultrasonic wave whose traveling direction is opposite to the flow direction of the water-oil emulsions is generated by at least a one second ultrasonic transducer provided at the downstream end of the ultrasonic acting region; and the concurrent ultrasonic wave and the countercurrent ultrasonic wave act simultaneously on the water-oil emulsions which flow through the ultrasonic acting region, so as to demulsify the water-oil emulsions. After being demulsified, the water-oil emulsions gravity settle and separate, or settle and separate under an electric field, so as to be dewatered. The present invention can apply to various water-oil separating technologies in the procedures from mining to processing of crude oil.

Abstract translation: 一种通过超声波作用对水 - 油乳化液进行破乳的方法，包括使水 - 油乳液在流动方向上流过至少一个超声波作用区域的步骤，其中：在超声作用区域内，并行超声波的行进方向 与通过设置在超声波作用区域的上游端的至少一个第一超声波振子产生水油乳剂的流动方向相同，同时，与其相反的逆流超声波 通过设置在超声波作用区域的下游端的至少一个第二超声换能器产生水 - 油乳液的流动方向; 同时超声波和逆流超声波同时作用于流过超声波作用区域的水 - 油乳液，从而使水 - 油乳化液破乳。 破乳后，水油乳液重力沉降分离，或在电场下沉降分离，脱水。 本发明可应用于从采矿到原油加工的各种水油分离技术。

公开(公告)号：US20070134861A1

公开(公告)日：2007-06-14

申请号：US11300147

申请日：2005-12-14

Applicant: Jin-Ping Han ,  Renee Mo ,  Tsong Tai ,  Anita Madan ,  Nivo Rovedo ,  Victor Ku ,  Martin Frank ,  Daeyoung Lim ,  Richard Haight

Inventor： Jin-Ping Han ,  Renee Mo ,  Tsong Tai ,  Anita Madan ,  Nivo Rovedo ,  Victor Ku ,  Martin Frank ,  Daeyoung Lim ,  Richard Haight

IPC: H01L21/8234

CPC classification number: H01L21/823857 ,  H01L21/823828

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment includes providing a workpiece, forming a gate dielectric material over the workpiece, the gate dielectric material comprising an insulator and at least one metal element, and forming a conductive material over the gate dielectric material. The conductive material comprises the at least one metal element of the gate dielectric material.

Abstract translation: 公开了半导体器件及其制造方法。 优选实施例包括提供工件，在工件上形成栅极电介质材料，栅极电介质材料包括绝缘体和至少一个金属元件，并在栅极电介质材料上形成导电材料。 导电材料包括栅介电材料的至少一个金属元件。

公开(公告)号：US20060254154A1

公开(公告)日：2006-11-16

申请号：US11127085

申请日：2005-05-12

Applicant: Wei Huang ,  Ming-Ta Yang ,  Ping-Han Lin

Inventor： Wei Huang ,  Ming-Ta Yang ,  Ping-Han Lin

IPC: B24D3/00

CPC classification number: B24B7/228 ,  B24D7/02 ,  B24D18/00

Abstract: An abrasive tool includes a substrate, a plurality of abrasive particle groups, and a bonding layer. The abrasive particle group consists of a plurality of abrasive particles grouped together. The abrasive particle groups are disposed in a regular pattern on the surface of the substrate and fixed on the surface by the bonding layer. To control the disposition of the abrasive particle groups, an abrasive particle template is used to form the required pattern. The size of the abrasive particle positioning holes on the template is used to adjust the number of particles in an abrasive particle group.

Abstract translation: 研磨工具包括基底，多个研磨粒子组和结合层。 研磨颗粒组由组合在一起的多个磨料颗粒组成。 磨料颗粒组以规则图案设置在基材表​​面上，并通过粘结层固定在表面上。 为了控制磨料颗粒组的布置，使用磨料颗粒模板来形成所需的图案。 模板上的磨料颗粒定位孔的尺寸用于调整磨料颗粒组中的颗粒数。

公开(公告)号：US09102520B2

公开(公告)日：2015-08-11

申请号：US12540027

申请日：2009-08-12

Applicant: Si-Ping Han ,  Hareem Maune ,  Robert D. Barish ,  William A. Goddard, III

Inventor： Si-Ping Han ,  Hareem Maune ,  Robert D. Barish ,  William A. Goddard, III

IPC: C07H21/02 ,  C40B40/04 ,  B82B1/00 ,  B82Y30/00

CPC classification number: B82B1/00 ,  B82Y30/00

Abstract: The disclosure relates to nanotube composite structures and related methods and systems. In particular, structures, methods and systems are provided herein to allow for precise, tunable separation between nanomaterials such as carbon nanotubes.

Abstract translation: 本公开涉及纳米管复合结构及相关方法和系统。 特别地，本文提供了结构，方法和系统，以允许诸如碳纳米管之类的纳米材料之间的精确的，可调节的分离。