Abstract:
There is provided a circuit and a method for generating a power up signal. The circuit for generating a power up signal, includes an external power voltage divider for dividing a magnitude of an external power voltage so as to output the divided voltage, an external power voltage detector for activating a detection signal when the output voltage of the external power voltage divider reaches a preset level, and a power up signal generator for outputting a power up signal according to the detection signal and a first internal power voltage. Herein, the power up signal is generated when the internal power voltage as well as the external power voltage reaches a sufficient level so that a power up signal skew may be reduced to stabilize its operation and enhance reliability of a device.
Abstract:
A semiconductor apparatus includes: a slave chip including a signal transfer unit configured to determine whether or not to transfer an input signal in response to a chip select signal; a master chip including a replica circuit unit having the same configuration as the signal transfer unit and a signal output unit configured to receive an output signal of the signal transfer unit and an output signal of the replica circuit unit and generate an output signal in response to the control signal; a first through-chip via vertically formed through the slave chip, and having one end connected to the master chip to receive the input signal and the other end connected to the signal transfer unit; and a second through-chip via vertically formed through the slave chip, and having one end connected to the signal transfer unit and the other end connected to the signal output unit.
Abstract:
A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.
Abstract:
A semiconductor apparatus has a plurality of chips stacked therein. Read control signals for controlling read operations of the plurality of chips are synchronized with a reference clock such that the time taken from the application of a read command to the output of data for each of the plurality of chips is maintained substantially the same.
Abstract:
A semiconductor integrated circuit includes a plurality of semiconductor chips respectively selected in response to a plurality of chip selection signals, and a chip selection signal generator configured to generate the chip selection signals in response to one first control signal for deciding whether to drive the semiconductor chips and at least one second control signal for selecting at least one semiconductor chip from among the semiconductor chips.
Abstract:
A semiconductor apparatus includes an individual-chip-designating-code setting block configured to generate a plurality of sets of individual-chip-designating-codes which have different code values or in which at least two sets of individual-chip-designating-codes have the same code value, in response to a plurality of chip fuse signals; a control block configured to generate a plurality of enable control signals in response to the plurality of chip fuse signals and most significant bits of the plurality of sets of individual-chip-designating-codes; and an individual chip activation block configured to compare individual-chip-designating-codes of the plurality of sets of individual-chip-designating-codes excluding the most significant bits, with chip selection addresses in response to the plurality of enable control signals, and enable one of a plurality of individual-chip-activation-signals depending upon a comparison result.
Abstract:
A semiconductor apparatus may comprise: a first chip ID generation unit configured to receive an enable signal through a first through-silicon via and a clock signal through a second through-silicon via and generate a first chip ID signal and a delayed enable signal; a second chip ID generation unit configured to receive the delayed enable signal through a third through-silicon via from the first chip ID generation unit and the clock signal and generate a second chip ID signal; a first chip selection signal generation unit configured to receive the first chip ID signal and a main ID signal and generate a first chip selection signal; and a second chip selection signal generation unit configured to receive the second chip ID signal and the main ID signal and generate a second chip selection signal.
Abstract:
A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.
Abstract:
A semiconductor system for identifying stacked chips includes a first semiconductor chip and a plurality of second semiconductor chips. The first semiconductor chip generates a plurality of counter codes by using an internal clock or an external input clock and transmits slave address signals and the counter codes through a through-chip via. The second semiconductor chips are given corresponding identifications (IDs) by latching the counter codes for a predetermined delay time, compare the latched counter codes with the slave address signals, and communicate data with the first semiconductor chip through the through-chip via according to the comparison result.
Abstract:
A semiconductor apparatus includes an individual-chip-designating-code setting block configured to generate a plurality of sets of individual-chip-designating-codes which have different code values or in which at least two sets of individual-chip-designating-codes have the same code value, in response to a plurality of chip fuse signals; a control block configured to generate a plurality of enable control signals in response to the plurality of chip fuse signals and most significant bits of the plurality of sets of individual-chip-designating-codes; and an individual chip activation block configured to compare individual-chip-designating-codes of the plurality of sets of individual-chip-designating-codes excluding the most significant bits, with chip selection addresses in response to the plurality of enable control signals, and enable one of a plurality of individual-chip-activation-signals depending upon a comparison result.