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    Light emitting diode and method of fabricating the same
    22.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号：US08039280B2

    公开(公告)日：2011-10-18

    申请号：US12601165

    申请日：2008-05-16

    Applicant: Shiro Sakai ,  Yoshiki Naoi

    Inventor： Shiro Sakai ,  Yoshiki Naoi

    IPC: H01L21/00

    CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/44

    Abstract: The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.

    Abstract translation: 本发明提供一种制造发光二极管的方法，其包括以下步骤：在衬底上形成化合物半导体层，所述化合物半导体层包括下半导体层，有源层和上半导体层; 以及通过用研磨剂摩擦基材来刮擦基材的表面。 根据本发明，研磨剂用于擦拭和划伤发光二极管的表面，从而使得可以使从有源层发射的光有效地离开到外部。 因此，可以提高发光二极管的光提取效率。

    SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF
    23.
    发明申请
    SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF 有权
    半导体基板，半导体器件及其制造方法

    公开(公告)号：US20110193236A1

    公开(公告)日：2011-08-11

    申请号：US12875649

    申请日：2010-09-03

    Applicant: Shiro SAKAI

    Inventor： Shiro SAKAI

    IPC: H01L23/52 ,  H01L21/28 ,  H01L21/20

    CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02656 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention provides a method of manufacturing a gallium nitride (GaN) substrate on a heterogeneous substrate at low cost while realizing performance improvement and long operational lifespan of semiconductor devices, such as LEDs or laser diodes, which are manufactured using the GaN substrate. The semiconductor substrate includes a substrate, a first semiconductor layer arranged on the substrate, a mask arranged on a first region of the first semiconductor layer, a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity in the first semiconductor layer and arranged under the metallic material layer.

    Abstract translation: 本发明提供了一种在异质衬底上以低成本制造氮化镓（GaN）衬底的方法，同时实现使用GaN衬底制造的诸如LED或激光二极管的半导体器件的性能改进和长使用寿命。 半导体衬底包括衬底，布置在衬底上的第一半导体层，布置在第一半导体层的第一区域上的掩模，布置在第一半导体层和掩模上的金属材料层，金属材料层布置在 与掩模相交的方向，配置在第一半导体层和金属材料层上的第二半导体层，以及配置在金属材料层的下方的第一半导体层的空腔。

    SEMICONDUCTOR SUBSTRATE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    24.
    发明申请
    SEMICONDUCTOR SUBSTRATE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    半导体基板，其制造方法，半导体器件及其制造方法

    公开(公告)号：US20100314661A1

    公开(公告)日：2010-12-16

    申请号：US12650276

    申请日：2009-12-30

    Applicant: Shiro SAKAI

    Inventor： Shiro SAKAI

    IPC: H01L29/06 ,  H01L21/20

    CPC classification number: H01L21/02502 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/007

    Abstract: The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semiconductor substrate comprises a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and voids formed in the first semiconductor layer under the metallic material layer.

    Abstract translation: 本发明提供了一种半导体衬底的制造方法，通过该方法可以在非均匀衬底上制造容易分离的平面GaN衬底，以及使用该GaN衬底制造的半导体器件。 半导体衬底包括衬底，布置在衬底上的第一半导体层，布置在第一半导体层上的金属材料层，布置在第一半导体层和金属材料层上的第二半导体层，以及形成在第一半导体中的空隙 在金属材料层下面。

    LASER DIODE HAVING NANO PATTERNS AND METHOD OF FABRICATING THE SAME
    25.
    发明申请
    LASER DIODE HAVING NANO PATTERNS AND METHOD OF FABRICATING THE SAME 有权
    具有纳米图案的激光二极管及其制造方法

    公开(公告)号：US20100208762A1

    公开(公告)日：2010-08-19

    申请号：US12768073

    申请日：2010-04-27

    Applicant: Shiro SAKAI

    Inventor： Shiro SAKAI

    IPC: H01S5/30 ,  H01L33/60

    CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/12 ,  H01S5/34333 ,  Y10S977/72

    Abstract: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.

    Abstract translation: 具有纳米图案的激光二极管设置在基板上。 第一导电型覆盖层设置在基板上，第二导电型覆盖层设置在第一导电型覆盖层上。 在第一导电型覆盖层和第二导电型覆盖层之间插入有源层。 柱状纳米图案布置在第二导电型覆盖层的表面，以形成诸如分布式反馈激光二极管的激光二极管。

    Laser diode having nano patterns and method of fabricating the same
    26.
    发明授权
    Laser diode having nano patterns and method of fabricating the same 有权
    具有纳米图案的激光二极管及其制造方法

    公开(公告)号：US07760784B2

    公开(公告)日：2010-07-20

    申请号：US12185995

    申请日：2008-08-05

    Applicant: Shiro Sakai

    Inventor： Shiro Sakai

    IPC: H01S5/00 ,  H01S3/08

    CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/12 ,  H01S5/34333 ,  Y10S977/72

    Abstract: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.

    Abstract translation: 具有纳米图案的激光二极管设置在基板上。 第一导电型覆盖层设置在基板上，第二导电型覆盖层设置在第一导电型覆盖层上。 在第一导电型覆盖层和第二导电型覆盖层之间插入有源层。 柱状纳米图案布置在第二导电型覆盖层的表面，以形成诸如分布式反馈激光二极管的激光二极管。

    LIGHT EMITTING DEVICE HAVING LIGHT EMITTING ELEMENTS
    30.
    发明申请
    LIGHT EMITTING DEVICE HAVING LIGHT EMITTING ELEMENTS 有权
    具有发光元件的发光装置

    公开(公告)号：US20090108272A1

    公开(公告)日：2009-04-30

    申请号：US12352240

    申请日：2009-01-12

    Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

    Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

    IPC: H01L33/00

    CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

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