POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    21.
    发明申请
    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    正电阻组合物和形成电阻图案的方法

    公开(公告)号:US20100086873A1

    公开(公告)日:2010-04-08

    申请号:US12573686

    申请日:2009-10-05

    Abstract: A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).

    Abstract translation: 一种正型抗蚀剂组合物,其包含:包含含有由通式(a0-1)表示的结构单元(a0)的聚合化合物(A1)和由具有由通式(a0-1)表示的结构单元(a0))的结构单元(a1)的基础组分(A) 酸解离,溶解抑制组; 和含有由通式(I)表示的阴离子部分的酸发生剂(B1)的酸产生剂成分(B):(式(a0-1)中,R 1表示氢原子,低级烷基 1〜5个碳原子的卤代低级烷基或1〜5个碳原子的卤代低级烷基; R2表示二价连接基团; R3表示环状骨架中含有-SO2-的环状基团,式(I)中,X表示 3〜30个碳原子的环状基团,Q1表示含有氧原子的二价连接基团,Y1表示碳原子数1〜4的亚烷基或碳原子数1〜4的氟化亚烷基。

    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND
    22.
    发明申请
    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 有权
    正极性组合物,形成耐火模式的方法和聚合物

    公开(公告)号:US20090269694A1

    公开(公告)日:2009-10-29

    申请号:US12425706

    申请日:2009-04-17

    Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R8 represents a divalent linking group; and R7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R4 represents a branched alkyl group of 3 or more carbon atoms; and each of R5 and R6 independently represents an alkyl group, wherein R5 and R6 are mutually bonded to form a ring).

    Abstract translation: 一种正性抗蚀剂组合物,其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分(A)和暴露时产生酸的酸产生剂组分(B),所述碱成分(A)包含高分子化合物 A1)具有由通式(a0-1)表示的结构单元(a0-1)(其中R1表示氢原子,低级烷基或卤代低级烷基; R8表示二价连接基团,R7表示 酸解离,溶解抑制基)和由通式(a0-2)表示的结构单元(a0-2)(其中R3表示氢原子,低级烷基或卤代低级烷基; R4表示支链烷基 3个以上的碳原子,R5和R6各自独立地表示烷基,其中R5和R6相互键合形成环)。

    METHOD OF PRODUCING INSULATOR THIN FILM, INSULATOR THIN FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
    23.
    发明申请
    METHOD OF PRODUCING INSULATOR THIN FILM, INSULATOR THIN FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
    制造绝缘体薄膜的方法,绝缘体薄膜,制造半导体器件的方法和半导体器件

    公开(公告)号:US20090104788A1

    公开(公告)日:2009-04-23

    申请号:US12349374

    申请日:2009-01-06

    Inventor: Tomoyuki Hirano

    Abstract: A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.

    Abstract translation: 一种用于通过原子层沉积工艺在衬底上形成薄膜的绝缘体薄膜的制造方法包括在衬底上形成硅原子层并在硅原子层上形成氧原子层的第一步骤 以及在所述基板上形成金属原子层并在所述金属原子层上形成氧原子层的第二工序,其中通过控制所述绝缘体薄膜中的金属原子的浓度来控制所述第一步骤和 第二步进行。

    Solvent For Cleaning Semiconductor Manufacturing Apparatus
    25.
    发明申请
    Solvent For Cleaning Semiconductor Manufacturing Apparatus 审中-公开
    半导体制造设备用溶剂

    公开(公告)号:US20080132740A1

    公开(公告)日:2008-06-05

    申请号:US11792467

    申请日:2005-11-08

    CPC classification number: C11D7/5022 C11D7/261 C11D7/262 C11D11/0047

    Abstract: A cleaning solvent is disclosed for removing residual resin compositions. The cleaning solvent contains at least an alcohol solvent having a boiling point of at least 100° C. The alcohol solvent having a boiling point of at least 100° C. is preferably constituted of at least one solvent selected from n-butyl alcohol, isobutyl alcohol, n-pentanol, 4-methyl-2-pentanol, and 2-octanol. It is more preferable that the alcohol solvent is an isobutyl alcohol.

    Abstract translation: 公开了用于除去残留树脂组合物的清洁溶剂。 清洗溶剂至少含有沸点为至少100℃的醇溶剂。沸点至少为100℃的醇溶剂优选由至少一种选自正丁醇,异丁基 醇,正戊醇,4-甲基-2-戊醇和2-辛醇。 醇溶剂更优选为异丁醇。

    Method of manufacturing semiconductor device using chemical mechanical polishing
    26.
    发明授权
    Method of manufacturing semiconductor device using chemical mechanical polishing 有权
    使用化学机械抛光制造半导体器件的方法

    公开(公告)号:US07101801B2

    公开(公告)日:2006-09-05

    申请号:US10704628

    申请日:2003-11-12

    CPC classification number: H01L21/76229 C09G1/02 H01L21/31053

    Abstract: A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened.

    Abstract translation: 一种半导体装置的制造方法,其特征在于,包括利用含有研磨粒子和表面活性剂的第一研磨液对所述具有凹凸表面的物体的表面进行第一次化学机械研磨,并对所述半导体装置进行第二化学机械研磨 通过使用含有研磨颗粒并且具有低于第一研磨液的表面活性剂浓度的第二研磨液,通过第一化学机械抛光抛光的物体的表面,其中将第一化学机械抛光切换到 第二次化学机械抛光时物体表面不平整。

    Resist composition, method of forming resist pattern, and polymeric compound
    28.
    发明授权
    Resist composition, method of forming resist pattern, and polymeric compound 有权
    抗蚀剂组合物,形成抗蚀剂图案的方法和聚合物

    公开(公告)号:US08916332B2

    公开(公告)日:2014-12-23

    申请号:US13441200

    申请日:2012-04-06

    CPC classification number: G03F7/0397 C08F224/00 C08F228/06 G03F7/2041

    Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms).

    Abstract translation: 一种抗蚀剂组合物,其包含在酸的作用下在显影液中显示改变的溶解度的碱成分(A)和曝光时产生酸的酸发生剂成分(B),含有树脂成分(A1 )包括由下述通式(a0-1)表示的结构单元(a0)和衍生自可以具有与被取代基取代的被取代基取代的在α-位上的碳原子键合的丙烯酸酯的结构单元,并且含有 通过酸(其中R表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基)的作用而显示出极性增加的酸可分解基团。

    Positive resist composition, method of forming resist pattern using the same, and polymeric compound
    30.
    发明授权
    Positive resist composition, method of forming resist pattern using the same, and polymeric compound 有权
    正型抗蚀剂组合物,使用其形成抗蚀剂图案的方法和聚合物

    公开(公告)号:US08268529B2

    公开(公告)日:2012-09-18

    申请号:US12687430

    申请日:2010-01-14

    CPC classification number: C08F220/26 C08F228/06 G03F7/0045 G03F7/0397

    Abstract: A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).

    Abstract translation: 一种正性抗蚀剂组合物,其包含在碱的作用下在碱性显影液中的溶解度变化的碱成分(A)和暴露于有机溶剂(S)时产生酸的酸产生剂成分(B),所述碱 含有由侧链上具有含有磺酰基的环状基团的丙烯酸酯衍生的结构单元(a0)的高分子化合物(A1)的组分(A),来源于丙烯酸酯的结构单元(a1) 酸解离,溶解抑制基团和由通式(a5-1)表示的结构单元(a5)(Y1表示脂族烃基; Z表示一价有机基团; a表示1〜3的整数,b表示 0〜2的整数,条件是a + b = 1〜3)。

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