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    Method to improve mask critical dimension uniformity (CDU)
    21.
    发明授权
    Method to improve mask critical dimension uniformity (CDU) 有权
    改善掩模临界尺寸均匀性（CDU）的方法

    公开(公告)号：US08609545B2

    公开(公告)日：2013-12-17

    申请号：US12031501

    申请日：2008-02-14

    Applicant: I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    Inventor： I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: G03F1/32 ,  G03F1/36 ,  G03F1/80 ,  H01J37/32422 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67236

    Abstract: A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

    Abstract translation: 公开了一种用于制造衬底的方法和系统。 首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后，在衬底中进行蚀刻处理。

    Model import for electronic design automation
    22.
    发明授权
    Model import for electronic design automation 有权
    电子设计自动化模型导入

    公开(公告)号：US08214772B2

    公开(公告)日：2012-07-03

    申请号：US13116981

    申请日：2011-05-26

    Applicant: Ru-Gun Liu ,  Chih-Ming Lai ,  Wen-Chun Huang ,  Boren Luo ,  I-Chang Shin ,  Yao-Ching Ku ,  Cliff Hou

    Inventor： Ru-Gun Liu ,  Chih-Ming Lai ,  Wen-Chun Huang ,  Boren Luo ,  I-Chang Shin ,  Yao-Ching Ku ,  Cliff Hou

    IPC: G06F17/50

    CPC classification number: G06F17/50

    Abstract: Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility.

    Abstract translation: 公开了以安全格式提供处理参数的方法和系统。 一方面，公开了一种向设计设备提供半导体制造处理参数的方法。 该方法包括提供制造设施的一组处理参数; 从一组处理参数创建模型; 将模型转换为相应的一组内核; 将所述内核集合转换成相应的矩阵集合; 并将该组矩阵传送到设计设施。 另一方面，公开了一种用于提供半导体制造处理参数的方法。 该方法包括提供制造设施的一组处理参数; 从一组处理参数创建一个处理模型; 将处理模型加密成与多个EDA工具一起使用的格式; 并将加密的处理模型格式传送到设计设施。

    DESIGN-DRIVEN METAL CRITICAL DIMENSION (CD) BIASING
    25.
    发明申请
    DESIGN-DRIVEN METAL CRITICAL DIMENSION (CD) BIASING 有权
    设计驱动金属关键尺寸（CD）偏移

    公开(公告)号：US20100293514A1

    公开(公告)日：2010-11-18

    申请号：US12464578

    申请日：2009-05-12

    Applicant: Louis Chao-Chiuan Liu ,  Lee-Chung Lu ,  Yao-Ching Ku

    Inventor： Louis Chao-Chiuan Liu ,  Lee-Chung Lu ,  Yao-Ching Ku

    IPC: G06F17/50

    CPC classification number: G06F17/5072 ,  G06F17/5031 ,  G06F17/5036 ,  G06F17/5077 ,  G06F2217/84

    Abstract: A method of designing an integrated circuit (“IC”) is provided that includes placing an IC design, where the IC design includes a first element, a second element, and a path coupling the first and second elements, and routing the IC design. Further, the method includes obtaining at least one of resistivity data and capacitance data related to the path, and obtaining timing data related to the path. The method also includes using at least one of the resistivity data, the capacitance data, and the timing data to determine a critical dimension (“CD”) bias to be applied to the path, and modifying the IC design, where modifying includes applying the CD bias to the path.

    Abstract translation: 提供一种设计集成电路（“IC”）的方法，其包括放置IC设计，其中IC设计包括第一元件，第二元件和耦合第一和第二元件的路径，以及布线IC设计。 此外，该方法包括获得与路径相关的电阻率数据和电容数据中的至少一个，并获得与该路径相关的定时数据。 该方法还包括使用电阻率数据，电容数据和定时数据中的至少一个来确定要施加到路径的临界尺寸（“CD”）偏差，以及修改IC设计，其中修改包括应用 CD偏向路径。

    System and method for processing masks with oblique features
    27.
    发明授权
    System and method for processing masks with oblique features 有权
    用倾斜特征处理掩模的系统和方法

    公开(公告)号：US07314689B2

    公开(公告)日：2008-01-01

    申请号：US10765531

    申请日：2004-01-27

    Applicant: Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

    Inventor： Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

    IPC: G03F1/00 ,  G03C5/00

    CPC classification number: G03F7/70425 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70383 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7046 ,  G03F9/7049

    Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

    Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。

    In-situ overlay alignment
    28.
    发明授权
    In-situ overlay alignment 有权
    原位重叠对齐

    公开(公告)号：US07218400B2

    公开(公告)日：2007-05-15

    申请号：US10792147

    申请日：2004-03-03

    Applicant: Grace H. Ho ,  Ming-Che Wu ,  Li-Heng Chou ,  Hung-Chang Hsieh ,  Jung Ting Chen ,  Yao-Ching Ku

    Inventor： Grace H. Ho ,  Ming-Che Wu ,  Li-Heng Chou ,  Hung-Chang Hsieh ,  Jung Ting Chen ,  Yao-Ching Ku

    IPC: G01B11/00

    CPC classification number: G03F9/7084 ,  G03F7/70633

    Abstract: A semiconductor wafer is disclosed that includes a plurality of fields, including a plurality of alignment fields. Each alignment field includes a plurality of intra-field small scribe lane primary mark (SSPM) overlay mark pairs there around. The SSPM mark pairs allow for in-situ, non-passive intra-field alignment correction. In one embodiment, there may be between two and four alignment fields, and between two and four SSPM mark pairs around each alignment field. The SSPM marks of each mark pair may be extra scribe-lane marks.

    Abstract translation: 公开了一种半导体晶片，其包括多个场，包括多个对准场。 每个对准场包括在其周围的多个场内小划线通道主标记（SSPM）覆盖标记对。 SSPM标记对允许原位，非被动场内对准校正。 在一个实施例中，可以在两个和四个对准场之间以及围绕每个对准场的两个和四个SSPM标记对之间。 每个标记对的SSPM标记可能是额外的划线标记。

    Mixed mode photomask for optical proximity correction in a lithographic process
    29.
    发明授权
    Mixed mode photomask for optical proximity correction in a lithographic process 有权
    用于光刻过程中的光学邻近校正的混合模式光掩模

    公开(公告)号：US6087049A

    公开(公告)日：2000-07-11

    申请号：US457119

    申请日：1999-12-07

    Applicant: Chin-Lung Lin ,  Yao-Ching Ku

    Inventor： Chin-Lung Lin ,  Yao-Ching Ku

    IPC: G03F1/00 ,  G03F1/26 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F1/26 ,  G03F1/36 ,  G03F7/70283 ,  G03F7/70433 ,  G03F7/70441

    Abstract: A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be -transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.

    Abstract translation: 适用于混合模式光掩模的光学邻近校正方法。 原始模式将从混合模式光掩模传输。 获得反映光掩模的关键尺寸与原始图案之间的关系的二进制掩模曲线和相移掩模曲线。 选择关键维度的临界值。 对于二进制掩模曲线，选择原始图案的临界尺寸大于临界值的部分。 相反，对于相移掩模曲线，选择原始图案的临界尺寸小于临界值的部分。 将这两个部分组合为光学特性曲线。 因此可以根据光学特性曲线制造混合模式光掩模。

    Method of optical proximity correction
    30.
    发明授权
    Method of optical proximity correction 有权

    公开(公告)号：US6064485A

    公开(公告)日：2000-05-16

    申请号：US345168

    申请日：1999-06-30

    Applicant: Chin-Lung Lin ,  Yao-Ching Ku

    Inventor： Chin-Lung Lin ,  Yao-Ching Ku

    IPC: G03F1/00 ,  G03F1/26 ,  G03F1/36 ,  G03F7/20 ,  G01N11/00

    CPC classification number: G03F1/26 ,  G03F1/36 ,  G03F7/70283 ,  G03F7/70433 ,  G03F7/70441

    Abstract: A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.

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