公开(公告)号：US11955331B2

公开(公告)日：2024-04-09

申请号：US15899656

申请日：2018-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong Chen ,  Kelvin Chan ,  Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01L21/02 ,  C23C16/00 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/0217 ,  C23C16/00 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/67703 ,  H01L21/68771

Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

公开(公告)号：US11761083B2

公开(公告)日：2023-09-19

申请号：US17025405

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/02

CPC classification number: C23C16/45557 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/0228 ,  H01L21/67253

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US20230230830A1

公开(公告)日：2023-07-20

申请号：US18125509

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  H01L21/02186 ,  H01L21/0217 ,  C23C16/45542 ,  H01L21/02205 ,  H01L21/02274 ,  C23C16/34 ,  H01L21/02211

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US20210090877A1

公开(公告)日：2021-03-25

申请号：US17025373

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US20210087688A1

公开(公告)日：2021-03-25

申请号：US17025405

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US20180330927A1

公开(公告)日：2018-11-15

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US12077861B2

公开(公告)日：2024-09-03

申请号：US17025025

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US11626281B2

公开(公告)日：2023-04-11

申请号：US17025373

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US20220389571A1

公开(公告)日：2022-12-08

申请号：US17825229

申请日：2022-05-26

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Philip A. Kraus ,  Thai Cheng Chua ,  James Canducci ,  Hanhong Chen ,  Zhejun Zhang ,  Hao Zhang ,  Xiankai Yu

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

公开(公告)号：US20220327262A1

公开(公告)日：2022-10-13

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.