公开(公告)号：US10205002B2

公开(公告)日：2019-02-12

申请号：US15418128

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Errol Antonio C. Sanchez ,  Hua Chung

IPC: C23C16/455 ,  C30B25/02 ,  C30B25/04 ,  C30B25/16 ,  C30B25/18 ,  H01L21/02 ,  H01L21/24 ,  H01L21/762 ,  H01L29/04 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes exposing a substrate having one or more fins to a group IV-containing precursor and a surfactant containing antimony to form an epitaxial film over sidewalls of the one or more fin structures, wherein the surfactant containing antimony is introduced into the epitaxy chamber before epitaxial growth of the epitaxial film, and a molar ratio of the surfactant containing antimony to the group IV-containing precursor is about 0.0001 to about 10.

公开(公告)号：US10043870B2

公开(公告)日：2018-08-07

申请号：US14918604

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Keun-Yong Ban

IPC: H01L29/205 ,  H01L27/146 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.

公开(公告)号：US09905412B2

公开(公告)日：2018-02-27

申请号：US15340292

申请日：2016-11-01

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02065 ,  B08B5/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30621 ,  H01L21/67023

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US11164767B2

公开(公告)日：2021-11-02

申请号：US16591354

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Hua Chung ,  Schubert S. Chu

IPC: H01L21/67 ,  H01J37/32 ,  B08B7/00 ,  C30B25/04 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3065 ,  H01L29/66

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

公开(公告)号：US10741393B2

公开(公告)日：2020-08-11

申请号：US16259585

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Yung-chen Lin ,  Qingjun Zhou ,  Xinyu Bao ,  Ying Zhang

IPC: H01L21/033 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/66 ,  H01L21/02

Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second regions of the substrate and form second mandrel structures comprising the hardmask material and the gap fill material. Fin structures are deposited on the substrate using the second mandrel structures as a mask.

公开(公告)号：US10276688B2

公开(公告)日：2019-04-30

申请号：US15896983

申请日：2018-02-14

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Zhiyuan Ye ,  Flora Fong-Song Chang ,  Abhishek Dube ,  Xuebin Li ,  Errol Antonio C. Sanchez ,  Hua Chung ,  Schubert S. Chu

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/167 ,  H01L29/417 ,  H01L21/02

Abstract: A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.

公开(公告)号：US10147596B2

公开(公告)日：2018-12-04

申请号：US15871264

申请日：2018-01-15

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/306 ,  H01L21/67

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US10125415B2

公开(公告)日：2018-11-13

申请号：US15668026

申请日：2017-08-03

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Errol Antonio C. Sanchez ,  Keun-Yong Ban ,  Xinyu Bao

IPC: H01L21/02 ,  C23C8/02

Abstract: Embodiments of the present disclosures provide methods and apparatus for manufacturing semiconductor devices such as transistors used for amplifying or switching electronic signals. Specifically, embodiments of the present disclosure generally relate to a semiconductor device having a film stack including an interlayer of semiconductor material and a buffer layer of semiconductor material underneath an active device layer. In various embodiments, the interlayer may include group III-V semiconductor materials formed between a first surface of a silicon-based substrate and the buffer layer. In certain embodiments the buffer layer may comprise group IV semiconductor materials. The interlayer may have a lattice constant designed to mitigate lattice mismatch between the group IV buffer layer and the silicon-based substrate. The buffer layer may provide improved integration of the active device layer to improve the performance of the resulting device.

公开(公告)号：US10115607B2

公开(公告)日：2018-10-30

申请号：US15267232

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu

IPC: B65B31/00 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.

公开(公告)号：US10002759B2

公开(公告)日：2018-06-19

申请号：US15417556

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Errol Antonio C. Sanchez

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02513 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/31111

Abstract: The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group IV-containing precursor to form an epitaxial layer having a V-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer.