公开(公告)号：US10023960B2

公开(公告)日：2018-07-17

申请号：US15466149

申请日：2017-03-22

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: H01L21/461 ,  C23C16/505 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

公开(公告)号：US20170306478A1

公开(公告)日：2017-10-26

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

CPC classification number: C23C16/38 ,  C23C16/45523 ,  C23C16/45525

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20170191164A1

公开(公告)日：2017-07-06

申请号：US15466149

申请日：2017-03-22

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

公开(公告)号：US20160013024A1

公开(公告)日：2016-01-14

申请号：US14659437

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

公开(公告)号：US20150184291A1

公开(公告)日：2015-07-02

申请号：US14659152

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/452 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

Abstract translation: 公开了与用于处理半导体衬底的硬件和方法相关的实施例。 一个示例性膜沉积反应器包括处理气体分配器，其包括等离子体气体进料入口，该等离子体气体进料入口定位成将等离子体气体供应到膜沉积反应器内的等离子体产生区域;以及前体气体进料入口，其位于将等离子体产生 地区; 绝缘限制容器，其被配置为将所述膜沉积反应器内的等离子体产生区域保持在较低的压力;以及电感耦合等离子体（ICP）线圈，其布置在所述绝缘限制容器的侧壁的一部分周围并且被定位成使得所述侧壁将 来自ICP线圈的等离子体产生区域; 以及基座，被配置为支撑半导体衬底，使得半导体衬底的膜沉积表面暴露于形成在处理气体分配器下游的反应区域。

公开(公告)号：US09029253B2

公开(公告)日：2015-05-12

申请号：US13874708

申请日：2013-05-01

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/20 ,  H01L29/49 ,  H01L29/40 ,  H01L21/28 ,  H01L21/44 ,  H01L29/51 ,  H01L21/67

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/67167 ,  H01L21/67253 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517

Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.

Abstract translation: 公开了含氮相稳定膜，形成相稳定膜的方法，以及包括相稳定膜的结构和器件。 相稳定膜包括基质材料和相稳定剂，其为膜内的基质材料提供形态稳定作用。 相位稳定膜可以用作例如微电子器件中的栅电极和类似膜。