公开(公告)号：US09552979B2

公开(公告)日：2017-01-24

申请号：US13907718

申请日：2013-05-31

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/469 ,  H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  H01L29/20

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在分批处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环来在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。

公开(公告)号：US20160372365A1

公开(公告)日：2016-12-22

申请号：US14741249

申请日：2015-06-16

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Jacob Huffman Woodruff ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76829 ,  C23C16/02 ,  C23C16/045 ,  C23C16/305 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/285 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract translation: 在一些方面，提供了形成金属硫族化物薄膜的方法。 根据一些方法，金属硫族化物薄膜在循环沉积过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相 硫属反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施例中，该方法包括在衬底和导电层之间形成金属硫属元素化物介质层。 在一些实施例中，该方法包括形成包括金属硫族化物介电层的MIS型接触结构。

公开(公告)号：US09478419B2

公开(公告)日：2016-10-25

申请号：US14133511

申请日：2013-12-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/336 ,  H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US20160133628A1

公开(公告)日：2016-05-12

申请号：US14997683

申请日：2016-01-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L27/0928 ,  H01L29/0649 ,  H01L29/165

Abstract: Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both n-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.

Abstract translation: 公开了形成结构和装置的半导体结构，器件和方法。 示例性结构包括可以包括n沟道MOS（NMOS）和p沟道MOS（PMOS）器件的多栅极或FinFET结构，以在衬底上形成CMOS结构和器件。 可以使用选择性外延和浅沟槽隔离技术来形成器件。

公开(公告)号：US20150170914A1

公开(公告)日：2015-06-18

申请号：US14133511

申请日：2013-12-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：US20140322862A1

公开(公告)日：2014-10-30

申请号：US14256728

申请日：2014-04-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C13/0007 ,  G11C2213/71 ,  H01L45/08 ,  H01L45/085 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1641

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括：形成第一电极，通过热原子层沉积（ALD）形成包含金属氧化物的电阻式开关氧化物层，用与形成金属氧化物的金属不同的金属掺杂剂掺杂电阻式开关氧化物层，以及形成第二电极 通过热原子层沉积（ALD），其中电阻式开关层介于第一电极和第二电极之间。 在一些实施例中，在沉积金属氧化物之后，可以进行形成电阻式开关氧化物而不使开关氧化物层的表面暴露于表面改性等离子体处理。

公开(公告)号：US20250062128A1

公开(公告)日：2025-02-20

申请号：US18922849

申请日：2024-10-22

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20240150892A1

公开(公告)日：2024-05-09

申请号：US18404983

申请日：2024-01-05

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US20240093363A1

公开(公告)日：2024-03-21

申请号：US18522778

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US11898243B2

公开(公告)日：2024-02-13

申请号：US17113301

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.