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公开(公告)号：US12055904B2
公开(公告)日：2024-08-06
申请号：US17293373
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Youping Zhang , Boris Menchtchikov , Cyrus Emil Tabery , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxime Philippe Frederic Genin
IPC: G06F30/10 , G03F7/00 , G05B13/02 , G05B13/04 , G06F30/27 , G06N3/045 , G06N3/08 , G06F119/02 , G06F119/22
CPC classification number: G05B13/048 , G03F7/705 , G03F7/70616 , G03F7/706837 , G05B13/027 , G05B13/042 , G06F30/10 , G06F30/27 , G06N3/045 , G06N3/08 , G06F2119/02 , G06F2119/22
Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.
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公开(公告)号：US12038694B2
公开(公告)日：2024-07-16
申请号：US18118695
申请日：2023-03-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Youping Zhang , Maxime Philippe Frederic Genin , Cong Wu , Jing Su , Weixuan Hu , Yi Zou
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/70675
Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.
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23.发明授权公开(公告)号：US11803127B2
公开(公告)日：2023-10-31
申请号：US17295193
申请日：2019-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Chenxi Lin , Cyrus Emil Tabery , Hakki Ergün Cekli , Simon Philip Spencer Hastings , Boris Menchtchikov , Yi Zou , Yana Cheng , Maxime Philippe Frederic Genin , Tzu-Chao Chen , Davit Harutyunyan , Youping Zhang
IPC: G03F7/00 , G05B13/02 , G05B19/418 , H01L21/66
CPC classification number: G03F7/705 , G05B13/027 , G05B19/41875 , H01L22/20 , G05B2219/32193 , G05B2219/32368 , G05B2219/45031
Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
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公开(公告)号：US11429029B2
公开(公告)日：2022-08-30
申请号：US17081325
申请日：2020-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Maurits Van Der Schaar , Patrick Warnaar , Youping Zhang , Arie Jeffrey Den Boef , Feng Xiao , Martin Ebert
Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.
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公开(公告)号：US11281113B2
公开(公告)日：2022-03-22
申请号：US17053255
申请日：2019-05-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Danying Li , Chi-Hsiang Fan , Abdalmohsen Elmalk , Youping Zhang , Jay Jianhui Chen , Kui-Jun Huang
IPC: G03F7/20
Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.
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Patent Agency Ranking
公开(公告)号：US11092900B2
公开(公告)日：2021-08-17
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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公开(公告)号：US11079684B2
公开(公告)日：2021-08-03
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US10578980B2
公开(公告)日：2020-03-03
申请号：US16465161
申请日：2017-11-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Ralph Timotheus Huijgen , Marc Jurian Kea , Marcel Theodorus Maria Van Kessel , Masashi Ishibashi , Chi-Hsiang Fan , Hakki Ergün Cekli , Youping Zhang , Maurits Van Der Schaar , Liping Ren
IPC: G03B27/32 , G03F7/20 , G01N21/956 , G03F9/00
Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.
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公开(公告)号：US10296681B2
公开(公告)日：2019-05-21
申请号：US15982933
申请日：2018-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US10007744B2
公开(公告)日：2018-06-26
申请号：US14941347
申请日：2015-11-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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