摘要:
A method for allocating real pages larger than a conventional size to a plurality of virtual pages of the conventional size in a system including a real storage containing a plurality of real pages and a storage key for holding storage keys used for storage protection purposes of the real pages. The method includes the steps of (A) allocating one of plural split regions having the conventional size obtained by subdividing one of a plurality of real pages having a larger size equal to a value n being a positive integer larger than 1) times larger than the conventional size, to one virtual page having the conventional size (B) repeating step (A) so that split regions having the conventional size within the one real page and within other real pages having the larger size are allocated to virtual pages having the conventional size. Either a real page of a larger size or a group of consecutively located split regions of the convention size are allocated to a virtual page of a size larger than the conventional size.
摘要:
A pillared clay possessing a desired amount of pillers is produced by heating clay thereby changing the cation-exchange capacity owned by the clay and then adding a cation oligomer as a pillar precursor to the clay thereby causing the oligomer to exchange ion with the cation of the clay.
摘要:
According to an aspect of the present invention, there is provided a semiconductor design apparatus including: a determination section that determines a connection position of a capacitor to suppress a noise on a layout data in which a layout of circuit cells are completed; a calculation section that calculates a capacitance value required to suppress the noise; a generation section that generates the capacitor satisfying the capacitance value; and a wiring section that wires the capacitor to a power wiring and a ground wiring at the connection position.
摘要:
In a multilayer wiring board comprising a core board, and a wiring layer and an electrically insulating layer that are stacked on one surface of said core board, a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode being the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer.
摘要:
An installation vertical groove (13) is formed in a circuit member-installing surface (12) of a resin-molded panel (11). Then, a flat circuit member (14) is inserted into the installation vertical groove, so that the flat circuit member is installed in such a manner that this flat circuit member stands in a direction perpendicular to the circuit member-installing surface. The installation vertical groove has opposed surfaces which are spaced from each other by a distance, corresponding to a thickness of the flat circuit member and are disposed perpendicularly to the circuit member-installing surface, and this installation vertical groove is formed to be disposed below the circuit member-installing surface.
摘要:
In a multilayer wiring board comprising a core board, and a wiring layer and an electrically insulating layer that are stacked on one surface of said core board, a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode being the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer.
摘要:
An user interface apparatus that receives a user operation of an electrical device and notifies the electrical device of the instruction to execute an action according to the user operation predicts at least one action, the execution of which is supposed to be desired by the user, provides a user interface for having the user designate one action out of the at least one action, and receives a designation by the user. When receiving the user designation, the user interface apparatus notifies the electrical device of the instruction to execute the action that has been designated by the user.
摘要:
A first vertical frame of a frame structure is supported on one side portion of a door by hinges. A latch tacker is attached to a strike that is provided on a second vertical frame of the casing. The latch tacker has a shape such that a latch bolt of a lock body on the door can be held at least from both above and below. A latch bolt receiving aperture is formed in the latch tacker. The latch tacker is fitted into the strike, and the latch bolt is inserted into the latch bolt receiving aperture, whereupon the second vertical frame is supported on the other side portion of the door by the latch tacker.
摘要:
A device includes an electrically programmable semiconductor integrated circuit or circuits, such as a Field Programmable Gate Array. Each circuit comprises a plurality of fundamental sections connected to a plurality of signal lines, wherein each fundamental section is permitted to carry out both operation in a logical operation mode for performing a logical operation using signals delivered from the signal lines and operation in a wiring formation mode for carrying out setting of connecting states between the respective signal lines, whereby the semiconductor integrated circuit is operable in any operation mode arbitrarily selected. The fundamental section may be of a structure capable of performing a sequential logical operation as the logical operation mode. In this case, at least one of the memories of the memory section corresponds to a latch memory.
摘要:
An interlayer cross-linked smectite is produced by a method which includes the steps of preparing a smectite suspension containing a dissolved water-soluble macromolecular compound, adding a cationic hydroxide oligomer to the suspension thereby subjecting the exchangeable cation in the smectite to ion exchange, allowing the resultant smectite suspension to stand at a fixed temperature for a fixed time thereby allowing the cationic hydroxide oligomer of the smectite to age, separating a solid smectite from the resultant suspension, and heating the separated solid smectite. The interlayer interval of the produced smectite can be controlled by adjusting the amount of the cationic hydroxide oligomer.