公开(公告)号：US20200013862A1

公开(公告)日：2020-01-09

申请号：US16502285

申请日：2019-07-03

Applicant: Analog Devices, Inc.

Inventor： Puneet Srivastava ,  James G. Fiorenza ,  Daniel Piedra

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778

Abstract: A semiconductor device having a back-side field plate includes a buffer layer that includes a first compound semiconductor material, where the buffer layer is epitaxial to a crystalline substrate. The semiconductor device also includes field plate layer that is disposed on a surface of the buffer layer. The semiconductor device further includes a first channel layer disposed over the field plate layer, where the first channel layer includes the first compound semiconductor material. The semiconductor device further includes a region comprising a two-dimensional electron gas, where the two-dimensional electron gas is formed at an interface between the first channel layer and a second channel layer. The semiconductor device additionally includes a back-side field plate that is formed by a region of the field plate layer and is electrically isolated from other regions of the field plate layer.

公开(公告)号：US20240420957A1

公开(公告)日：2024-12-19

申请号：US18815302

申请日：2024-08-26

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

Abstract: Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.

公开(公告)号：US12106960B2

公开(公告)日：2024-10-01

申请号：US17504391

申请日：2021-10-18

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/02694 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

Abstract: Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.

公开(公告)号：US20240258383A1

公开(公告)日：2024-08-01

申请号：US18413723

申请日：2024-01-16

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/404 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: This disclosure describes various techniques to use a backside field-plated GaN HEMT device as a four-terminal device. The backside field plate (BFP) may be independently biased and used to adjust the 2DEG current density in the device. By independently controlling the 2DEG channel density using the BFP, the channel current may be reduced prior to switching events, thereby enabling soft-switching using the BFP. Thus, the BFP may be used to reduce the current through the device during switching events to reduce the power loss and stress on the device that may occur during hard-switching.

公开(公告)号：US20240213354A1

公开(公告)日：2024-06-27

申请号：US18069824

申请日：2022-12-21

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Guanghai Ding ,  Daniel Piedra

IPC: H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7786

Abstract: Techniques to increase the number of current paths (or “channels”) in a GaN transistor, without increasing the device area, thereby decreasing the on-resistance. In addition, this disclosure describes techniques to utilize back-side field management to improve the device's performance. For example, the techniques can include using p-type implantation into the substrate, e.g., silicon carbide (SiC), as a field management tool to form a superjunction device, thereby increasing the effective field and reducing the on-resistance multiplied by the output charge (Qoss).

公开(公告)号：US20240097016A1

公开(公告)日：2024-03-21

申请号：US18039919

申请日：2021-12-02

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra ,  Joshua Andrew Perozek

IPC: H01L29/778 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7783 ,  H01L29/0843 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/207

Abstract: Integrated circuits can include compound semiconductor devices having conductive components that control electrical characteristics of the compound semiconductor devices. In one or more examples, one or more conductive components can be located to increase the concentration of electrons in relation to a source electrical contact or a drain electrical contact. In one or more additional examples, a conductive component can be located to reduce the concentration of electrons in relation to a gate electrical contact. The compound semiconductor devices can include a number of compound semiconductor layers that include one or more materials having at least one Group 13 element and at least one Group 15 element.

公开(公告)号：US20230377882A1

公开(公告)日：2023-11-23

申请号：US18196733

申请日：2023-05-12

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L21/02694 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254

Abstract: During gallium nitride (GaN) semiconductor fabrication, a nucleation layer, e.g., aluminum nitride (AlN) may be formed superjacent a substrate, e.g., silicon carbide (SiC). Next, a semiconductor layer, such as including GaN, may be formed over the nucleation layer. This disclosure describes various techniques for forming a thick enough layer of gallium nitride (GaN) to ensure complete coalescence and minimal surface roughness, then removing the excess GaN until a desired thickness is achieved. In some examples, the GaN removal may be performed by desorption, such as may be performed in-situ by using hydrogen gas close to the growth temperature.

公开(公告)号：US11569182B2

公开(公告)日：2023-01-31

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US20210126120A1

公开(公告)日：2021-04-29

申请号：US17067988

申请日：2020-10-12

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10

Abstract: Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

公开(公告)号：US20210118871A1

公开(公告)日：2021-04-22

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter A. Stubler

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/45 ,  H01L23/66 ,  H01L29/205 ,  H01L23/48 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.