公开(公告)号：US07405140B2

公开(公告)日：2008-07-29

申请号：US11206059

申请日：2005-08-18

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

公开(公告)号：US20080035055A1

公开(公告)日：2008-02-14

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。

公开(公告)号：US07202186B2

公开(公告)日：2007-04-10

申请号：US10630970

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US20070048956A1

公开(公告)日：2007-03-01

申请号：US11213871

申请日：2005-08-30

申请人： Anthony Dip ,  Seungho Oh ,  Allen Leith

发明人： Anthony Dip ,  Seungho Oh ,  Allen Leith

IPC分类号： H01L21/331

CPC分类号： C30B25/165 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45523 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.

摘要翻译： 提供了一种在中断沉积工艺中在衬底上选择性地形成含Si膜的方法。 该方法包括提供含有生长表面和非生长表面的基底，并且通过将基底暴露于HX气体同时将基底暴露于氯化硅烷气体脉冲，从而在生长表面上选择性地形成含Si膜。 含Si膜可以是选择性地在Si或SiGe生长表面上形成但不在氧化物，氮化物或氮氧化物非生长表面上的Si膜或SiGe膜。

公开(公告)号：US20070042569A1

公开(公告)日：2007-02-22

申请号：US11206059

申请日：2005-08-18

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

公开(公告)号：US20120003825A1

公开(公告)日：2012-01-05

申请号：US12830210

申请日：2010-07-02

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/20

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。

公开(公告)号：US08043432B2

公开(公告)日：2011-10-25

申请号：US11673852

申请日：2007-02-12

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45551 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/68764 ,  H01L21/68771

摘要： Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.

摘要翻译： 使用原子层沉积（ALD）沉积薄膜的系统和方法。 沉积系统包括具有外围侧壁的处理室，将处理室内的处理空间分成至少第一和第二隔室的隔板，以及支撑处理空间内的基板的盘片。 盘片相对于固定的外围侧壁和隔间旋转衬底。 第一隔室接收用于在每个基板上沉积层的工艺材料。 注射加工材料的注射器通过周边侧壁与第一隔室连通。

公开(公告)号：US07994070B1

公开(公告)日：2011-08-09

申请号：US12894513

申请日：2010-09-30

申请人： Anthony Dip ,  Kimberly G Reid

发明人： Anthony Dip ,  Kimberly G Reid

IPC分类号： H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/3105

摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.

摘要翻译： 用于在基板上沉积电介质膜的方法包括将多个基板定位在处理室中，将处理室加热到400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体 进入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜 。 一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

公开(公告)号：US20110151122A1

公开(公告)日：2011-06-23

申请号：US13035049

申请日：2011-02-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US07632354B2

公开(公告)日：2009-12-15

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/455 ,  H01L21/302

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。