公开(公告)号：US20100239782A1

公开(公告)日：2010-09-23

申请号：US12792226

申请日：2010-06-02

申请人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

发明人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

IPC分类号： C23C16/513

CPC分类号： H01J37/32192 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/3244

摘要： An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

摘要翻译： 绝缘膜由等离子体膜形成装置形成，该等离子体膜形成装置包括具有电磁波入射面F的真空容器，在该真空容器中形成的第一气体注入孔以及在远离电磁波的真空容器中制造的第二气体注入孔 入射面F比第一个气体注入孔。 例如，从距离电磁波入射面F的距离小于10mm的位置引入第一气体到真空容器中。 从与电磁波入射面的距离为10mm以上的位置向真空容器引入包含有机硅化合物的第二气体。

公开(公告)号：US20080099447A1

公开(公告)日：2008-05-01

申请号：US11544051

申请日：2006-10-06

申请人： Makoto Ando ,  Takuichi Hirano ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Masashi Goto ,  Atsushi Sasaki ,  Tetsuya Ide ,  Tetsuya Okamoto

发明人： Makoto Ando ,  Takuichi Hirano ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Masashi Goto ,  Atsushi Sasaki ,  Tetsuya Ide ,  Tetsuya Okamoto

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32229

摘要： A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of λ0>p>a2>b2 and p=(λg1/2)+±α (where α is 5% or below of λg1), where λ0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, εr1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and λg1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

摘要翻译： 多个电磁波辐射波导形成为从电磁波分布波导分支。 向每个电磁波辐射波导提供多个槽。 电磁波辐射波导的宽度，电磁波辐射波导的高度和电磁波辐射波导周期p被设定为满足λ<2> / SUB >> b 2和p =（λ1g1 / 2）+±α（其中α为λ1的5％或更低） ），其中λ<0>是电磁波的自由空间波长，a1是电磁波分布波导的宽度，ε是电介质的介电常数 电磁波分布波导中的材料，λ1g1是从电磁波分布波导中的电磁波源输出的电磁波的波长。

公开(公告)号：US06784455B2

公开(公告)日：2004-08-31

申请号：US10043723

申请日：2002-01-08

申请人： Masashi Maekawa ,  Yukihiko Nakata

发明人： Masashi Maekawa ,  Yukihiko Nakata

IPC分类号： H01L29786

CPC分类号： H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

摘要： A TFT fabricated from a single crystal grain, and fabrication method has been provided. A large crystal grain is made by precise control of annealment, transition metal concentration, the density of transition metal nucleation sites, and the distance between nucleation sites. In one aspect of the invention, a diffusion layer permits the continual delivery of transition metal at a rate that both supports the lateral growth of di-silicide, and large distances between nucleation sites.

摘要翻译： 提供了由单晶制造的TFT及其制造方法。 通过精确控制退火，过渡金属浓度，过渡金属成核位点的密度以及成核位置之间的距离，可以制得大晶粒。 在本发明的一个方面，扩散层允许以支持二硅化物的横向生长和成核位置之间的大距离的速率连续输送过渡金属。

公开(公告)号：US06620744B2

公开(公告)日：2003-09-16

申请号：US10037558

申请日：2002-01-04

申请人： Yukihiko Nakata ,  Takashi Itoga ,  Tetsuya Okamoto ,  Toshimasa Hamada

发明人： Yukihiko Nakata ,  Takashi Itoga ,  Tetsuya Okamoto ,  Toshimasa Hamada

IPC分类号： H01L2131

CPC分类号： H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/31612 ,  H01L21/31662 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/4908 ,  H01L29/66757

摘要： A method for forming an insulator film at a semiconductor temperature of 600° C. or less comprises the steps of forming a first insulator film by oxidizing a surface of a semiconductor in an atmosphere containing oxygen atom radicals, and forming a second insulator film on the first insulator film by deposition without exposing the first insulator film to outside air.

摘要翻译： 在半导体温度为600℃以下的绝缘膜形成方法包括以下步骤：通过在含有氧原子的气氛中氧化半导体的表面来形成第一绝缘膜，并在第二绝缘膜上形成第二绝缘膜 通过沉积而不将第一绝缘膜暴露于外部空气的第一绝缘膜。

公开(公告)号：US06620661B2

公开(公告)日：2003-09-16

申请号：US10043766

申请日：2002-01-08

申请人： Masashi Maekawa ,  Yukihiko Nakata

发明人： Masashi Maekawa ,  Yukihiko Nakata

IPC分类号： H01L21336

CPC分类号： H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

摘要： A TFT fabricated from a single crystal grain, and fabrication method has been provided. A large crystal grain is made by precise control of annealment, transition metal concentration, the density of transition metal nucleation sites, and the distance between nucleation sites. In one aspect of the invention, a diffusion layer permits the continual delivery of transition metal at a rate that both supports the lateral growth of di-silicide, and large distances between nucleation sites.

公开(公告)号：US4714868A

公开(公告)日：1987-12-22

申请号：US783565

申请日：1985-10-03

申请人： Toshio Maruyama ,  Noriaki Shibuya ,  Yukihiko Nakata

发明人： Toshio Maruyama ,  Noriaki Shibuya ,  Yukihiko Nakata

IPC分类号： H02J7/35 ,  H02J7/00

CPC分类号： H02J7/008 ,  H02J7/0078 ,  Y10S323/906

摘要： A charging and discharge control circuit includes a charging control for detecting a voltage across a storage battery connected with a source of electromotive force and for outputting a first switching signal for a charging circuit of the storage battery, and a discharge control for integrating the amount of voltage discharged from the storage battery and for outputting a second switching signal for a discharge circuit. The second switching signal corresponds to the amount of voltage remaining in the storage battery. The integrated value of the amount of the voltage discharged is reset by an output signal from the charging control which is outputted at the time of completion of the charging of the storage battery.

摘要翻译： 充放电控制电路包括用于检测与电动势源连接的蓄电池两端的电压并输出用于蓄电池的充电电路的第一开关信号的充电控制，以及用于对蓄电池的充电电流进行积分的放电控制 电压从蓄电池放电并输出用于放电电路的第二开关信号。 第二开关信号对应于蓄电池中剩余的电压量。 通过在蓄电池的充电完成时输出的充电控制的输出信号来复位放电电压量的积分值。

公开(公告)号：US07311796B2

公开(公告)日：2007-12-25

申请号：US10681615

申请日：2003-10-08

申请人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

发明人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01J37/32192 ,  C23C16/511

摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

摘要翻译： 等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。

公开(公告)号：US20070034157A1

公开(公告)日：2007-02-15

申请号：US11584566

申请日：2006-10-23

申请人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

发明人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192

摘要： Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

摘要翻译： 公开了一种用于执行等离子体处理的等离子体处理装置，包括用于产生电磁波的电磁波源，矩形波导，形成在矩形波导中并构成波导天线的多个槽，电磁波辐射窗， 电介质体和真空室，其中通过电磁波辐射窗通过从槽辐射到真空室中的电磁波产生等离子体，等离子体处理装置被构造成包括用于分配电磁波的电磁波分配波导部分 从电磁波源产生的每个波导的波形，多个波导从电场平面或与电磁波分配波导部分的磁场平面垂直的平面分支。

公开(公告)号：US20060090704A1

公开(公告)日：2006-05-04

申请号：US11259190

申请日：2005-10-27

申请人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： C23C16/00

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

摘要翻译： 在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。 作为处理对象的基板由所生成的等离子体进行处理。 电介质板连接到与处理室相对的梁的那些表面。 每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。 使用等离子体处理装置可以均匀地进行大面积的处理。

公开(公告)号：US20050000446A1

公开(公告)日：2005-01-06

申请号：US10876550

申请日：2004-06-28

申请人： Yukihiko Nakata ,  Tetsuya Ide

发明人： Yukihiko Nakata ,  Tetsuya Ide

IPC分类号： H01L21/3065 ,  C23C16/00 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A plasma processing apparatus includes at least one electromagnetic wave source for generating an electromagnetic wave, an electromagnetic wave-distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source, a plurality of waveguides each coupled with the electromagnetic wave-distributing waveguide portion, the waveguides being provided on the same plane, a plurality of slots provided in each of the waveguides, at least one electromagnetic wave radiating window provided to face each slot, and a vacuum vessel in which a plasma is generated by the electromagnetic wave radiated from the electromagnetic wave radiating window. The electromagnetic wave-distributing waveguide portion is provided on the plural waveguides.

摘要翻译： 等离子体处理装置包括至少一个用于产生电磁波的电磁波源，用于分配从电磁波源产生的电磁波的电磁波分配波导部分，多个波导，每个波导与电磁波分配波导部分 波导设置在同一平面上，设置在每个波导中的多个槽，设置成面对每个槽的至少一个电磁波辐射窗口，以及真空容器，其中通过从 电磁波辐射窗。 电磁波分布波导部分设置在多个波导上。