Efficient post programming verification in a nonvolatile memory

    公开(公告)号:US20200005873A1

    公开(公告)日:2020-01-02

    申请号:US16202127

    申请日:2018-11-28

    Applicant: Apple Inc.

    Abstract: A storage device includes storage circuitry and multiple memory cells. The memory cells are organized in multiple memory blocks of a nonvolatile memory. The storage circuitry is configured to define a partial verification scheme that specifies testing only a data portion of the data programmed to the memory blocks, to program data to a memory block, calculate redundancy data over the data, and save the calculated redundancy data in a dedicated memory, to verify that the data portion specified for the memory block in the partial verification scheme has been programmed successfully, to check a predefined condition for conditionally performing full verification to the memory block, when the predefined condition is fulfilled, to verify that data programmed to the memory block and not tested using the partial verification scheme has been programmed successfully, and to recover, using the redundancy data, at least part of the data programmed that failed verification.

    Tamper-proof storage using signatures based on threshold voltage distributions

    公开(公告)号:US10339324B2

    公开(公告)日:2019-07-02

    申请号:US15387699

    申请日:2016-12-22

    Applicant: Apple Inc.

    Abstract: An apparatus includes an interface and storage circuitry. The interface is configured to communicate with a memory including multiple memory cells that store data as respective analog values. The memory is addressable using physical addresses. The storage circuitry is configured to perform a first read operation from a physical address, and determine a first sequence of analog values retrieved by the first read operation, to further perform a second read operation from the physical address, and determine a second sequence of analog values retrieved by the second read operation, to evaluate a variation between the first sequence and the second sequence, and to determine that an unauthorized re-programming to the physical address has occurred between the first read operation and the second read operation, in response to the evaluated variation exceeding a predefined variation level.

    Data recovery in memory having multiple failure modes

    公开(公告)号:US09996417B2

    公开(公告)日:2018-06-12

    申请号:US15096303

    申请日:2016-04-12

    Applicant: Apple Inc.

    CPC classification number: G06F11/1072 G06F11/108 G11C29/52

    Abstract: A controller includes an interface and a processor. The interface is configured to communicate with a memory including multiple memory cells organized in at least two sections each including multiple sets of word lines (WLs), wherein in a first failure mode multiple WLs fail in a single section, and in a second failure mode a WL fails in multiple sections. The processor is configured to assign multiple cell-groups of the memory cells to a parity-group, such that (i) no two cell-groups in the parity-group belong to a same WL, and (ii) no two cell-groups in the parity-group belong to adjacent WLs in a same section, and, upon detecting a failure to access a cell-group in the parity-group, due to either the first or second failure modes but not both failure modes occurring simultaneously, to recover the data stored in the cell-group using one or more remaining cell-groups in the parity-group.

    DATA RECOVERY IN MEMORY HAVING MULTIPLE FAILURE MODES

    公开(公告)号:US20170293527A1

    公开(公告)日:2017-10-12

    申请号:US15096303

    申请日:2016-04-12

    Applicant: Apple Inc.

    CPC classification number: G06F11/1072 G06F11/108 G11C29/52

    Abstract: A controller includes an interface and a processor. The interface is configured to communicate with a memory including multiple memory cells organized in at least two sections each including multiple sets of word lines (WLs), wherein in a first failure mode multiple WLs fail in a single section, and in a second failure mode a WL fails in multiple sections. The processor is configured to assign multiple cell-groups of the memory cells to a parity-group, such that (i) no two cell-groups in the parity-group belong to a same WL, and (ii) no two cell-groups in the parity-group belong to adjacent WLs in a same section, and, upon detecting a failure to access a cell-group in the parity-group, due to either the first or second failure modes but not both failure modes occurring simultaneously, to recover the data stored in the cell-group using one or more remaining cell-groups in the parity-group.

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