公开(公告)号：US10851454B2

公开(公告)日：2020-12-01

申请号：US16597526

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  H01L21/285 ,  C23C16/455

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US10559497B2

公开(公告)日：2020-02-11

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US10480066B2

公开(公告)日：2019-11-19

申请号：US16123437

申请日：2018-09-06

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190185993A1

公开(公告)日：2019-06-20

申请号：US16220794

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/18 ,  C23C16/455 ,  C23C14/00

CPC classification number: C23C16/18 ,  C07F15/0046 ,  C23C14/0047 ,  C23C16/45529 ,  C23C16/45542 ,  H01B1/06

Abstract: Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.

公开(公告)号：US20180308694A1

公开(公告)日：2018-10-25

申请号：US15951726

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziping Duan ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US11289374B2

公开(公告)日：2022-03-29

申请号：US16467669

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US11066743B2

公开(公告)日：2021-07-20

申请号：US16220794

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/04 ,  C23C14/00 ,  C23C16/458 ,  C23C16/02 ,  H01B1/06 ,  C07F15/00

Abstract: Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.

公开(公告)号：US10991586B2

公开(公告)日：2021-04-27

申请号：US16835279

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/02

Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US20200373318A1

公开(公告)日：2020-11-26

申请号：US16876280

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M. Barnal Ramos ,  Shih Chung Chen

IPC: H01L27/11556 ,  H01L21/285 ,  H01L21/67 ,  H01L21/28 ,  H01L29/423 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/06

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

公开(公告)号：US20200335334A1

公开(公告)日：2020-10-22

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.