公开(公告)号：US11114285B2

公开(公告)日：2021-09-07

申请号：US15487324

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Brian T. West ,  Roger M. Johnson ,  Yan Rozenzon ,  Dinkesh Somanna ,  Dustin W. Ho

IPC: H01J37/32 ,  H01L21/67

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

公开(公告)号：US11011356B2

公开(公告)日：2021-05-18

申请号：US16890573

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： Brian T. West ,  Michael S. Cox ,  Jeonghoon Oh

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

公开(公告)号：US09779920B2

公开(公告)日：2017-10-03

申请号：US14456014

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Brian T. West ,  Michael S. Cox ,  Jeonghoon Oh

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/347 ,  H01J37/3491 ,  H01J37/3497

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

公开(公告)号：US09779917B2

公开(公告)日：2017-10-03

申请号：US14480799

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Stanley Detmar ,  Brian T. West ,  Ronald Vern Schauer

IPC: B05B7/12 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334

Abstract: Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.

公开(公告)号：US09240308B2

公开(公告)日：2016-01-19

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: C23C16/54 ,  H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。