公开(公告)号：US11361991B2

公开(公告)日：2022-06-14

申请号：US16975794

申请日：2019-03-07

Applicant: Applied Materials, Inc.

Inventor： Xin Liu ,  Fei Wang ,  Rui Cheng ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/768 ,  C23C16/01 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/06

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.

公开(公告)号：US20210378971A1

公开(公告)日：2021-12-09

申请号：US17341213

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Balaji Ganapathy ,  Jonathan Frankel ,  Shivkumar Chiruvolu ,  Pravin K. Narwankar

IPC: A61K9/50 ,  A61K31/397 ,  A61K31/517 ,  A61K31/4422

Abstract: A pharmaceutical composition containing a metal oxide coated particle comprising 1) an amorphous solid dispersion (ASD) core containing an active pharmaceutical ingredient (API) and a polymer; and 2) a metal oxide coating, and the method of making said metal oxide coated particle by atomic layer deposition (ALD). The metal oxide coated particle is useful because it prevents the ASD from crystallization and helps maintain the ASD in an amorphous form.

公开(公告)号：US20200338008A1

公开(公告)日：2020-10-29

申请号：US16858439

申请日：2020-04-24

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Colin C. Neikirk ,  Jonathan Frankel ,  Pravin K. Narwankar

IPC: A61K9/16

Abstract: A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential atomic layer deposition of a metal oxide layer(s) followed by molecular level deposition of a polymer layer(s). This produces a pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials and one more polymer materials

公开(公告)号：US20180350597A1

公开(公告)日：2018-12-06

申请号：US16001251

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US09875907B2

公开(公告)日：2018-01-23

申请号：US15235048

申请日：2016-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/461 ,  H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  H01L21/3105

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144

Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

公开(公告)号：US09721789B1

公开(公告)日：2017-08-01

申请号：US15332870

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Lala Zhu ,  Fei Wang ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67 ,  H01L21/687 ,  H01L21/673

CPC classification number: H01L21/02334 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67086 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67389 ,  H01L21/68707 ,  H01L21/68742

Abstract: Methods of selectively removing silicon oxide are described. Exposed portions of silicon oxide and spacer material may both be present on a patterned substrate. The silicon oxide may be a native oxide formed on silicon by exposure to atmosphere. The exposed portion of spacer material may have been etched back using reactive ion etching (RIE). A portion of the exposed spacer material may have residual damage from the reactive ion etching. A self-assembled monolayer (SAM) is selectively deposited over the damaged portion of spacer material but not on the exposed silicon oxide or undamaged portions of spacer material. A subsequent gas-phase etch may then be used to selectively remove silicon oxide but not the damaged portion of the spacer material because the SAM has been found to not only preferentially adsorb on the damaged spacer but also to halt the etch rate.