公开(公告)号：US20220392750A1

公开(公告)日：2022-12-08

申请号：US17337146

申请日：2021-06-02

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：US20210066036A1

公开(公告)日：2021-03-04

申请号：US17080802

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Rutger MEYER TIMMERMAN THIJSSEN ,  Kartik RAMASWAMY ,  Yang YANG ,  Manivannan THOTHADRI ,  Chien-An CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01J37/073 ,  G02B6/13 ,  H01J37/147 ,  H01L21/3065 ,  G02B5/18

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US20200006036A1

公开(公告)日：2020-01-02

申请号：US16391263

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

公开(公告)号：US20150371824A1

公开(公告)日：2015-12-24

申请号：US14310969

申请日：2014-06-20

Applicant: Applied Materials, Inc.

Inventor： Steven LANE ,  Yang YANG ,  Kartik RAMASWAMY ,  Lawrence WONG

IPC: H01J37/32 ,  C23F4/00 ,  C23C16/513

CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334

Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.

Abstract translation: 本文所述的实施方案将原料气体注入到电感耦合等离子体处理反应器的多个区域中，对工艺偏差具有最小或没有影响。 在一个实施例中，提供集成的气体和线圈组件，其包括上表面和下表面，在上表面和下表面界定的第一RF场施加器线圈，由第一RF场限定的第二RF场施加器线圈 施加器线圈并且在上表面和下表面处限定，并且RF屏蔽设置在第一和第二RF场发生器之间，其中RF屏蔽件从下表面延伸并且经过上表面。 RF屏蔽件可以具有穿过其中布置的至少一个气体通道。

公开(公告)号：US20250157791A1

公开(公告)日：2025-05-15

申请号：US18388821

申请日：2023-11-11

Applicant: Applied Materials, Inc.

Inventor： Yuhui ZHANG ,  Yang YANG ,  Zhimin JIANG ,  Kartik RAMASWAMY ,  Alok RANJAN

IPC: H01J37/32 ,  H01L21/3065

Abstract: An apparatus for generating plasma inductively in a process chamber leverages a radial coil network. In some embodiments, the radial coil network is a planar structure comprising an inner conductor with an open center where at least one RF power source is electrically connected to the inner conductor at a power node, an outer conductor spaced away from and surrounding the inner conductor where at least one ground is electrically connected to the outer conductor at a ground node, a plurality of branch conductors extending from the inner conductor to the outer conductor where the plurality of branch conductors is distributed uniformly in the radial coil network, and a plurality of capacitors where at least one capacitor of the plurality of capacitors is electrically interposed into each branch conductor of the plurality of branch conductors.

公开(公告)号：US20240290578A1

公开(公告)日：2024-08-29

申请号：US18115537

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Yang YANG ,  Nicolas J. BRIGHT

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/321

Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

公开(公告)号：US20240234087A1

公开(公告)日：2024-07-11

申请号：US18612757

申请日：2024-03-21

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO ,  Fernando SILVEIRA

IPC: H01J37/32 ,  H03K17/687

CPC classification number: H01J37/32091 ,  H03K17/687 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

公开(公告)号：US20240177968A1

公开(公告)日：2024-05-30

申请号：US18059658

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yue GUO ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32128

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for processing a substrate in a plasma processing system. The apparatus includes a pulse voltage (PV) waveform generator comprising at least one synchronization signal and a plurality of pulsers to provide a plurality of TTL inputs. The PV waveform generator generates a waveform containing pulses or bursts which contain micropulses corresponding to the plurality of TTL input signals and the at least one synchronization signal. The method includes receiving a first TTL input signal and a synchronization waveform signal from a controller, delivering a first micropulse to an electrode assembly after receiving the first TTL input signal and synchronization signal, and delivering a second micropulse to the electrode assembly after receiving the second TTL input signal and the synchronization signal.

公开(公告)号：US20240118328A1

公开(公告)日：2024-04-11

申请号：US17960666

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Fernando SILVEIRA ,  A N M Wasekul AZAD

IPC: G01R29/08

CPC classification number: G01R29/0885

Abstract: Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic sensor, and a controller. The electro-optic sensor may include a package comprising a first electro-optic crystal disposed within a body; and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The controller is configured to generate a command signal based on a signal received from the first light sensor.

公开(公告)号：US20230335376A1

公开(公告)日：2023-10-19

申请号：US17723722

申请日：2022-04-19

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Fernando SILVEIRA ,  Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Imad YOUSIF

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/06375 ,  H01J2237/2007

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.