公开(公告)号：US20080299326A1

公开(公告)日：2008-12-04

申请号：US11755491

申请日：2007-05-30

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Lee Woo Jin ,  Mikio Shimizu

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Lee Woo Jin ,  Mikio Shimizu

IPC分类号： C23C16/44

CPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/463 ,  C23C16/509

摘要： A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.

摘要翻译： 等离子体CVD装置包括：用于将基板放置在其上并用作电极的冷却基座; 以及用于经由形成在其中的多个通孔将气体引向基座的喷淋板。 淋浴板用作电极并且平行于基座设置。 冷却基座由陶瓷材料制成，该陶瓷材料设置有用于使冷却流体从其中通过的冷却流体流动路径。

公开(公告)号：US07148154B2

公开(公告)日：2006-12-12

申请号：US10644195

申请日：2003-08-20

申请人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

发明人： Yasuyoshi Hyodo ,  Nobuo Matsuki ,  Masashi Yamaguchi ,  Atsuki Fukazawa ,  Naoki Ohara ,  Yijun Liu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

摘要翻译： 通过引入包含（i）包含含有至少一个乙烯基的含硅烃化合物的源气体（Si-乙烯基化合物））的反应气体，通过等离子体聚合在基板上形成含硅绝缘膜，和（ii） 添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

公开(公告)号：US07147900B2

公开(公告)日：2006-12-12

申请号：US10641397

申请日：2003-08-14

申请人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

发明人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

IPC分类号： H05H1/24 ,  B05D3/06

CPC分类号： C23C16/505 ,  C23C16/401 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/3233 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31612

摘要： A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

摘要翻译： 通过使用包括（i）包含含有多个可交联基团的含硅烃化合物的源气体，（ii）交联气体和（ii）交联气体）的反应气体通过等离子体反应在基板上形成含硅绝缘膜， iii）惰性气体，放入放置基板的反应室中。 然后将绝缘膜暴露于电子束辐射，从而提高膜的机械强度，而不会导致介电常数的显着变化。

公开(公告)号：US20060269690A1

公开(公告)日：2006-11-30

申请号：US11139311

申请日：2005-05-27

申请人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

发明人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/401 ,  B82Y30/00 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.

摘要翻译： 形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并且将在基板上产生的细颗粒沉积在反应器内部的上下电极之间，同时以约100℃/ cm以下的方式控制基板和上电极之间的温度梯度。

公开(公告)号：US07064088B2

公开(公告)日：2006-06-20

申请号：US10412363

申请日：2003-04-11

申请人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

发明人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US07012268B2

公开(公告)日：2006-03-14

申请号：US10847127

申请日：2004-05-17

申请人： Nobuo Matsuki ,  Atsuki Fukazawa ,  Naoto Tsuji

发明人： Nobuo Matsuki ,  Atsuki Fukazawa ,  Naoto Tsuji

IPC分类号： H01J37/32 ,  H01J37/06

CPC分类号： H01J33/00 ,  H01J37/06

摘要： An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.

摘要翻译： 电子束照射装置包括容纳灯丝和阳极并具有非活性气体入口的惰性气体入口的可抽出的灯丝电子枪室; 连接到排气系统的可抽空处理室; 以及用于分离灯丝电极枪室和处理室的分离壁。 分隔壁具有孔，该孔被配置为使电子和气体从灯丝电子枪室通过。

公开(公告)号：US07470633B2

公开(公告)日：2008-12-30

申请号：US11524037

申请日：2006-09-20

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Sik Lee

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Sik Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  B05D1/62 ,  G03F7/167 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3127 ,  H01L21/3146

摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃。 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。

公开(公告)号：US20070224833A1

公开(公告)日：2007-09-27

申请号：US11387527

申请日：2006-03-23

申请人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

发明人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

公开(公告)号：US20060084280A1

公开(公告)日：2006-04-20

申请号：US11172031

申请日：2005-06-30

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Lee

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Seijiro Umemoto ,  Jea Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/0332 ,  B05D1/62 ,  G03F7/167 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/3146

摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。

公开(公告)号：US06410463B1

公开(公告)日：2002-06-25

申请号：US09691079

申请日：2000-10-18

申请人： Nobuo Matsuki

发明人： Nobuo Matsuki

IPC分类号： H01L2131

CPC分类号： C09D4/00 ,  B05D1/62 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, the improvement can be achieved by lengthening a residence time, Rt, of a reaction gas in the reactor, wherein 100 msec≦Rt. The film includes insulation films and mask films.

摘要翻译： 在通过等离子体反应在半导体衬底上在反应器中形成具有低相对介电常数的膜的方法中，可以通过延长反应器中的反应气体的停留时间Rt来实现改进，其中100ms = Rt。 该膜包括绝缘膜和掩模膜。