公开(公告)号：US20060269690A1

公开(公告)日：2006-11-30

申请号：US11139311

申请日：2005-05-27

申请人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

发明人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/401 ,  B82Y30/00 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.

摘要翻译： 形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并且将在基板上产生的细颗粒沉积在反应器内部的上下电极之间，同时以约100℃/ cm以下的方式控制基板和上电极之间的温度梯度。

公开(公告)号：US20060105583A1

公开(公告)日：2006-05-18

申请号：US10990562

申请日：2004-11-17

申请人： Shingo Ikeda ,  Nobuo Matsuki ,  Yoshinori Morisada ,  Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura

发明人： Shingo Ikeda ,  Nobuo Matsuki ,  Yoshinori Morisada ,  Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura

IPC分类号： H01L21/31

CPC分类号： C23C16/509 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31695

摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.

摘要翻译： 形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并沉积在放置在反应器内的衬底上产生的微粒。

公开(公告)号：US20050034667A1

公开(公告)日：2005-02-17

申请号：US10641397

申请日：2003-08-14

申请人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

发明人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

IPC分类号： C23C16/42 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H05H1/24 ,  C23C16/00

CPC分类号： C23C16/505 ,  C23C16/401 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/3233 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31612

摘要： A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

摘要翻译： 通过使用包括（i）包含含有多个可交联基团的含硅烃化合物的源气体，（ii）交联气体和（ii）交联气体）的反应气体通过等离子体反应在基板上形成含硅绝缘膜， iii）惰性气体，放入放置基板的反应室中。 然后将绝缘膜暴露于电子束辐射，从而提高膜的机械强度，而不会导致介电常数的显着变化。

公开(公告)号：US07147900B2

公开(公告)日：2006-12-12

申请号：US10641397

申请日：2003-08-14

申请人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

发明人： Naoto Tsuji ,  Atsuki Fukazawa ,  Nobuo Matsuki ,  Shingo Ikeda

IPC分类号： H05H1/24 ,  B05D3/06

CPC分类号： C23C16/505 ,  C23C16/401 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/3233 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31612

摘要： A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

摘要翻译： 通过使用包括（i）包含含有多个可交联基团的含硅烃化合物的源气体，（ii）交联气体和（ii）交联气体）的反应气体通过等离子体反应在基板上形成含硅绝缘膜， iii）惰性气体，放入放置基板的反应室中。 然后将绝缘膜暴露于电子束辐射，从而提高膜的机械强度，而不会导致介电常数的显着变化。

公开(公告)号：US07354873B2

公开(公告)日：2008-04-08

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US20070004204A1

公开(公告)日：2007-01-04

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US06759344B2

公开(公告)日：2004-07-06

申请号：US10309401

申请日：2002-12-03

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/401

摘要： An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

摘要翻译： 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

公开(公告)号：US08003174B2

公开(公告)日：2011-08-23

申请号：US11955766

申请日：2007-12-13

申请人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

IPC分类号： H05H1/24

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/31612

摘要： A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

摘要翻译： 形成电介质膜的方法包括：将基本上由Si，O，C和H构成的硅氧烷气体和基本上由Si，N，H和任选的C组成的硅氮烷气体引入放置基板的反应室中 ; 通过等离子体反应在衬底上沉积包含Si-N键的硅氧烷基膜; 并在退火室中退火基板上的硅氧烷基膜，以从膜中除去Si-N键。

公开(公告)号：US07651959B2

公开(公告)日：2010-01-26

申请号：US11949701

申请日：2007-12-03

申请人： Atsuki Fukazawa ,  Jeongseok Ha ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Jeongseok Ha ,  Nobuo Matsuki

IPC分类号： H01L21/469

CPC分类号： H01L21/3125 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45512 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3185

摘要： A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.

摘要翻译： 形成电介质膜的方法包括：将基本上由Si，N，H和任选地C构成的源气体引入至少一个选自Si-N，Si-Si和Si-H的键到反应室中， 放置基板; 在-50℃至50℃下通过等离子体反应将基本上由Si，N，H和任选C构成的硅氮烷基膜沉积在基板上，其中该膜不含基本上由C构成的溶剂的暴露 ，H和任选的O; 并在热处理室中将基板上的硅氮烷基膜热处理，同时将氧供应源引入热处理室中以从膜中释放C并增加膜中的Si-O键。

公开(公告)号：US07560144B2

公开(公告)日：2009-07-14

申请号：US11086598

申请日：2005-03-22

申请人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

IPC分类号： H05H1/24

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122

摘要： A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

摘要翻译： 一种形成具有低介电常数的膜的方法，包括以下步骤：将反应室内的上部电极和下部电极之间的基板放置在反应室内，引入含硅烃化合物源气体，添加气体和惰性 气体通过控制气体流量比进入上部和下部电极之间的空间，通过在上部电极和基底之间的间隔较窄的状态下对上部和下部电极之间的空间施加RF功率来产生等离子体 衬底的中心附近比其周围附近，并且以小于约的沉积速率在衬底上形成具有低介电常数的膜。 通过控制处理气体的流量来达到790nm / min。