Array substrate, display apparatus, and method of fabricating array substrate

    公开(公告)号:US11335712B2

    公开(公告)日:2022-05-17

    申请号:US16755652

    申请日:2019-05-13

    Abstract: An array substrate is provided. The array substrate includes a base substrate; a first bonding pad layer including a plurality of first bonding pads on a first side of the base substrate; a second bonding pad layer including a plurality of second bonding pads on a second side of the base substrate, wherein the second side is opposite to the first side; and a plurality of signal lines on a side of the second bonding pad layer away from the base substrate. A respective one of the plurality of second bonding pads extends through the base substrate to electrically connect to a respective one of the plurality of first bonding pads. The respective one of the plurality of first bonding pads includes a protruding portion protruding away from the first side of the base substrate along a direction from the second side to the first side.

    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISLAY DEVICE

    公开(公告)号:US20200091263A1

    公开(公告)日:2020-03-19

    申请号:US16556342

    申请日:2019-08-30

    Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.

    Thin film transistor, method for manufacturing the same and display device

    公开(公告)号:US10510857B2

    公开(公告)日:2019-12-17

    申请号:US15865793

    申请日:2018-01-09

    Abstract: A method for manufacturing a thin film transistor includes: forming a source electrode and a first insulation pattern, where an orthographic projection of the first insulation pattern at a substrate is within an orthographic projection of the source electrode at the substrate; forming an active layer, a second insulation pattern and a gate electrode on the substrate, an exposed portion of the source electrode not covered by the first insulation pattern and the first insulation pattern; exposing a first portion of the action layer on the first insulation pattern by removing parts of the gate electrode and the second insulation pattern; and performing a plasma treatment to the exposed first portion, thereby forming a drain electrode.

    Thin film transistor and fabrication method thereof, array substrate, and display panel

    公开(公告)号:US10211342B2

    公开(公告)日:2019-02-19

    申请号:US15564055

    申请日:2017-05-10

    Inventor: Ke Wang

    Abstract: A thin film transistor and a fabrication method thereof, an array substrate, and a display panel are provided. The fabrication method of the thin film transistor includes: forming an active layer on a base substrate, the active layer including a channel region; forming an amorphous carbon layer on a region of the active layer other than the channel region; and forming a source electrode and a drain electrode on the amorphous carbon layer, the source electrode and the drain electrode being respectively electrically connected with the active layer through the amorphous carbon layer.

Patent Agency Ranking