公开(公告)号：US20240371887A1

公开(公告)日：2024-11-07

申请号：US18773582

申请日：2024-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yuhang LU ,  Fengjuan LIU ,  Hehe HU ,  Zhengliang LI ,  Ce NING ,  Guangcai YUAN ,  Dandan ZHOU ,  Cheng XU

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L25/075 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

Abstract: A thin film transistor includes a first active layer, a second active layer, a first electrode, a second electrode and a third electrode. The first active layer includes a first surface away from a substrate. The second active layer includes a second surface in contact with the first surface. The first electrode, the first active layer and the second active layer have an overlapping region. The second electrode, the first active layer and the second active layer have an overlapping region. The third electrode, the first active layer and the second active layer have an overlapping region, and the third electrode is opposite to the second electrode. The second surface is located within the first surface, and a distance between at least part of a border of the second surface and a border of the first surface is less than or equal to 0.5 μm.

公开(公告)号：US20240355978A1

公开(公告)日：2024-10-24

申请号：US18254210

申请日：2022-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Zhongpeng TIAN ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Jiayu HE ,  Feifei LI ,  Kun ZHAO ,  Yimin CHEN

IPC: H01L33/62 ,  G02F1/13357 ,  H05K3/46

CPC classification number: H01L33/62 ,  G02F1/133603 ,  H05K3/4688

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

公开(公告)号：US20240329478A1

公开(公告)日：2024-10-03

申请号：US18638710

申请日：2024-04-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Ce NING ,  Hui GUO ,  Fengjuan LIU ,  Dongfang WANG ,  Zhengliang LI ,  Jiayu HE

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1259

Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.

公开(公告)号：US20240244747A1

公开(公告)日：2024-07-18

申请号：US17927576

申请日：2021-12-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Feifei LI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Jie HUANG ,  Kun ZHAO ,  Zhanfeng CAO ,  Ke WANG

IPC: H05K1/11 ,  H01L23/498 ,  H01L33/62 ,  H05K1/09 ,  H05K1/18

CPC classification number: H05K1/111 ,  H01L23/49838 ,  H01L33/62 ,  H05K1/09 ,  H05K1/181 ,  H05K2201/0338 ,  H05K2201/10106 ,  H05K2201/10151

Abstract: A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.

公开(公告)号：US20240194686A1

公开(公告)日：2024-06-13

申请号：US17908652

申请日：2021-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Shuilang DONG ,  Lizhong WANG ,  Dapeng XUE ,  Jiayu HE ,  Jie HUANG ,  Lubin SHI ,  Liping LEI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. As an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.

公开(公告)号：US20240186330A1

公开(公告)日：2024-06-06

申请号：US17786177

申请日：2021-08-26

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H01L27/12

CPC classification number: H01L27/124

Abstract: Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.

公开(公告)号：US20230122965A1

公开(公告)日：2023-04-20

申请号：US17784398

申请日：2021-06-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO

IPC: H10K59/126 ,  H10K59/131 ,  H10K71/60 ,  H10K59/13 ,  H10K59/121 ,  H01L27/12

Abstract: A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.

公开(公告)号：US20220131009A1

公开(公告)日：2022-04-28

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20210063793A1

公开(公告)日：2021-03-04

申请号：US16631331

申请日：2019-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe HU ,  Xiaochen MA ,  Guangcai YUAN ,  Ce NING ,  Xin GU

IPC: G02F1/1368 ,  G02F1/1362

Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

公开(公告)号：US20190267409A1

公开(公告)日：2019-08-29

申请号：US16302850

申请日：2018-03-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe HU ,  Wei YANG ,  Xinhong LU ,  Ke WANG ,  Yu WEN

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.