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公开(公告)号：US07041200B2
公开(公告)日：2006-05-09
申请号：US10126333
申请日：2002-04-19
IPC分类号： C23C14/35
CPC分类号： H01J37/32495 , C23C14/34 , C23C14/564 , H01J37/3408
摘要： In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm2 of substrate surface area.
摘要翻译： 在磁控溅射室中，将衬底放置在腔室中，并且围绕衬底保持沉积屏蔽以屏蔽腔室中的内表面。 沉积屏蔽具有可以通过热压工艺或涂覆工艺形成的纹理表面，并且允许积聚的溅射残余物粘附到其上而不会剥落。 将电力施加到面向基板的高密度溅射靶，以在腔室中形成等离子体，同时围绕靶施加至少约300高斯的旋转磁场以溅射靶。 有利地，对于至少约8,000个衬底可以重复溅射工艺循环，而不清洁腔室中的内表面，并且即使在仍然在每个处理的衬底上产生的平均粒子数小于每10cm 2小于1个颗粒时， / SUP>的衬底表面积。
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22.发明授权Substrate processing system having symmetric RF distribution and return paths 有权基板处理系统具有对称的RF分布和返回路径公开(公告)号：US09255322B2
公开(公告)日：2016-02-09
申请号：US13436776
申请日：2012-03-30
申请人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
发明人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/32577 , H01J37/3405 , H01J37/3411 , H01J37/3414
摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.
摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。
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公开(公告)号：US20150162171A9
公开(公告)日：2015-06-11
申请号：US13524859
申请日：2012-06-15
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
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公开(公告)号：US08900427B2
公开(公告)日：2014-12-02
申请号：US13213367
申请日：2011-08-19
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.
摘要翻译： 一种磁控管致动器，用于在等离子体溅射反应器中的靶的背面中几乎任意的径向和方位角路径上移动磁控管。 磁控管包括沿着腔室中心轴延伸并且耦合到两个可独立控制的旋转致动器的两个同轴旋转轴。 行星齿轮机构或青蛙腿结构将轴机械地连接到磁控管以控制其径向和方位位置。 垂直致动器串联地垂直移动轴以改变磁控管与目标背面的分离并补偿前表面的侵蚀。 旋转致动器可以单独地联接到轴上，或者可旋转的环形齿轮可以通过分别固定和绕动的空转齿轮联接到轴。 两个径向间隔的传感器检测附接到行星齿轮机构的内臂和外臂的反射器，用于归位控制器。
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公开(公告)号：US08685215B2
公开(公告)日：2014-04-01
申请号：US12794452
申请日：2010-06-04
申请人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
发明人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza-Jing Gung , Hong S. Yang , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。
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公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。
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公开(公告)号：US20130192629A1
公开(公告)日：2013-08-01
申请号：US13740083
申请日：2013-01-11
申请人： Vineet Mehta , Karl M. BROWN , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. PARKHE
发明人： Vineet Mehta , Karl M. BROWN , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. PARKHE
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译： 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。
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公开(公告)号：US08435379B2
公开(公告)日：2013-05-07
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： H01L21/306
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译： 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。
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公开(公告)号：USD646452S1
公开(公告)日：2011-10-04
申请号：US29389733
申请日：2011-04-15
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公开(公告)号：US08021527B2
公开(公告)日：2011-09-20
申请号：US11924573
申请日：2007-10-25
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.
摘要翻译： 一种磁控管致动器，用于在等离子体溅射反应器中的靶的背面中几乎任意的径向和方位角路径上移动磁控管。 磁控管包括沿着腔室中心轴延伸并且耦合到两个可独立控制的旋转致动器的两个同轴旋转轴。 行星齿轮机构或青蛙腿结构将轴机械地连接到磁控管以控制其径向和方位位置。 垂直致动器串联地垂直移动轴以改变磁控管与目标背面的分离并补偿前表面的侵蚀。 旋转致动器可以单独地联接到轴上，或者可旋转的环形齿轮可以通过分别固定和绕动的空转齿轮联接到轴。 两个径向间隔的传感器检测附接到行星齿轮机构的内臂和外臂的反射器，用于归位控制器。
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