公开(公告)号：US08580094B2

公开(公告)日：2013-11-12

申请号：US13163817

申请日：2011-06-20

申请人： Rongjun Wang ,  Sally Lou ,  Muhammad Rasheed ,  Jianxin Lei ,  Xianmin Tang ,  Srinivas Gandikota ,  Ryan Hanson ,  Tza-Jing Gung ,  Keith A. Miller ,  Thanh X. Nguyen

发明人： Rongjun Wang ,  Sally Lou ,  Muhammad Rasheed ,  Jianxin Lei ,  Xianmin Tang ,  Srinivas Gandikota ,  Ryan Hanson ,  Tza-Jing Gung ,  Keith A. Miller ,  Thanh X. Nguyen

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3461

摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

公开(公告)号：US20100252416A1

公开(公告)日：2010-10-07

申请号：US12723199

申请日：2010-03-12

申请人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

发明人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/342 ,  H01J37/3423

摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

摘要翻译： 公开了包括目标组件的目标组件和PVD室。 目标组件包括具有凹形目标的目标。 当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

公开(公告)号：US09752228B2

公开(公告)日：2017-09-05

申请号：US12723199

申请日：2010-03-12

申请人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

发明人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： C23C14/3407 ,  H01J37/342 ,  H01J37/3423

摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

公开(公告)号：US20100252417A1

公开(公告)日：2010-10-07

申请号：US12754473

申请日：2010-04-05

申请人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

发明人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US08557094B2

公开(公告)日：2013-10-15

申请号：US11689720

申请日：2007-03-22

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

IPC分类号： C23C14/34

CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

公开(公告)号：US20080190760A1

公开(公告)日：2008-08-14

申请号：US11838796

申请日：2007-08-14

申请人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

发明人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/358 ,  C23C14/5826 ,  C23C14/584 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.

摘要翻译： 一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射 房间。 沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。 蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。 可以执行两个或更多个沉积/蚀刻循环。 最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

公开(公告)号：US08992741B2

公开(公告)日：2015-03-31

申请号：US12188937

申请日：2008-08-08

申请人： Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Maurice E. Ewert

发明人： Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Maurice E. Ewert

IPC分类号： C23C14/35 ,  C23C14/54 ,  C23C14/34 ,  H01J37/34 ,  H01L21/02 ,  H01J37/32

CPC分类号： C23C14/54 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/34 ,  H01J37/347 ,  H01L21/02266

摘要： In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.

摘要翻译： 在等离子体增强的物理气相沉积反应器中，通过将RF和DCC功率施加到目标并且独立地调节RF和DC电源的功率电平来增强穿过工件的沉积速率的径向分布的均匀性。 通过调整磁体在目标上方的高度，调整磁体在目标上方的轨道运动的半径，并提供目标的角度边缘表面，可获得进一步优化。

公开(公告)号：US20080083610A1

公开(公告)日：2008-04-10

申请号：US11689720

申请日：2007-03-22

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

IPC分类号： C23C14/35

CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

公开(公告)号：US08129280B2

公开(公告)日：2012-03-06

申请号：US12508820

申请日：2009-07-24

申请人： Rongjun Wang ,  Xianmin Tang ,  Dengliang Yang ,  Zhendong Liu ,  Srinivas Gandikota

发明人： Rongjun Wang ,  Xianmin Tang ,  Dengliang Yang ,  Zhendong Liu ,  Srinivas Gandikota

IPC分类号： H01L21/311

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517

摘要： Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius.

摘要翻译： 提供具有调谐功能的衬底器件及其形成方法。 在一些实施例中，在衬底上形成器件可以包括在具有导电性的衬底顶上淀积介电层; 在所述电介质层的顶部沉积包含具有第一氮组成的钛铝或氮化铝钛的功函数层; 蚀刻功函数层以从电介质层顶部选择性地去除功函数层的至少一部分; 在所述功函数层和所述衬底的顶部上沉积包含具有第二氮组成的钛铝或氮化铝钛的层，其中所述功函数层或所述层中的至少一个包含氮; 蚀刻所述层和所述介电层以从所述衬底顶部选择性地去除所述层和所述电介质层的一部分; 并在低于约1500摄氏度的温度下退火衬底。

公开(公告)号：US20160293798A1

公开(公告)日：2016-10-06

申请号：US15183594

申请日：2016-06-15

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.