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36 条记录 (耗时 0.037 秒)

    Lighting device having illumination, backlighting and display applications
    21.
    发明申请
    Lighting device having illumination, backlighting and display applications 有权
    照明设备具有照明，背光和显示应用

    公开(公告)号：US20090167151A1

    公开(公告)日：2009-07-02

    申请号：US12005583

    申请日：2007-12-27

    申请人： Boris Kolodin ,  Srinath Aanegola ,  Emil Vergilov Radkov

    发明人： Boris Kolodin ,  Srinath Aanegola ,  Emil Vergilov Radkov

    IPC分类号： H01J1/62

    CPC分类号： G02F1/133603 ,  G02F2001/133614 ,  H01J1/63 ,  H01L33/504 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are a lighting device, a backlighting device, and a display device that comprise a radiation source such as LED and wavelength converting members comprising phosphors. In one embodiment, self-absorption within the devices is suppressed or reduced by placing a selective reflector between two wavelength converting members, and the wavelength converting member emitting light with longer peak wavelength is substantially isolated from the irradiation of another wavelength converting member emitting light with shorter peak wavelength. In other embodiments, the wavelength converting members are arranged in strip configuration; or in adjacent hexagons configuration.

    摘要翻译： 提供了包括诸如LED的辐射源和包括磷光体的波长转换构件的照明装置，背光装置和显示装置。 在一个实施例中，通过在两个波长转换构件之间放置选择性反射器来抑制或减少器件内的自吸收，并且发射具有较长峰值波长的光的波长转换构件基本上与发射具有 较短的峰值波长。 在其他实施例中，波长转换构件被布置成带状构造; 或相邻的六边形配置。

    Flip chip light emitting diode devices having thinned or removed substrates
    22.
    发明申请
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US20050023550A1

    公开(公告)日：2005-02-03

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil Stefanov

    IPC分类号： H01L21/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

    Phosphor down converting element for an LED package and fabrication method
    25.
    发明授权
    Phosphor down converting element for an LED package and fabrication method 有权
    一种LED封装的荧光降低转换元件及其制造方法

    公开(公告)号：US07737457B2

    公开(公告)日：2010-06-15

    申请号：US11862534

    申请日：2007-09-27

    申请人： Boris Kolodin ,  Emil Vergilov Radkov

    发明人： Boris Kolodin ,  Emil Vergilov Radkov

    IPC分类号： H01L33/00

    CPC分类号： H01L33/501

    摘要： There is provided a phosphor down converting element based on fluoropolymer resin and a method for fabricating the same. There is further provided a method for using said phosphor down converting element to generate white light from a radiation source. The method for fabricating phosphor down converting element includes preparing an appropriate phosphor powder mixture that is capable of absorbing a first band of wavelengths and emitting a second band of wavelengths being greater in length than the first bands, incorporating the phosphor powder mixture into or on a phosphor carrier element comprising a fluoropolymer material, and molding the phosphor down converting elements into useful shapes. Fluoropolymers are the most chemically inert of all plastics, can withstand both extremely high and low temperatures, and show a resistance to weavering and UV degradation, making fluoropolymers optimal for use as a phosphor carrier.

    摘要翻译： 提供了一种基于氟聚合物树脂的磷光体下变换元件及其制造方法。 还提供了一种使用所述磷光体下变换元件从辐射源产生白光的方法。 制造磷光体下变换元件的方法包括制备适当的荧光体粉末混合物，其能够吸收波长的第一波长并且发射长度大于第一波段的波长的第二波长，将荧光体粉末混合物掺入到 荧光体载体元件包括含氟聚合物材料，并将磷光体成型为有用的形状。 含氟聚合物是所有塑料中最具化学惰性的，可以承受极高和低温，并且显示出对织造和UV降解的抗性，使得氟聚合物最适合用作荧光体载体。

    CIRCUIT BOARD FOR DIRECT FLIP CHIP ATTACHMENT
    26.
    发明申请
    CIRCUIT BOARD FOR DIRECT FLIP CHIP ATTACHMENT 失效
    电路板直接连接芯片连接

    公开(公告)号：US20090212317A1

    公开(公告)日：2009-08-27

    申请号：US12038200

    申请日：2008-02-27

    申请人： Boris Kolodin ,  James Reginelli

    发明人： Boris Kolodin ,  James Reginelli

    IPC分类号： H01L33/00 ,  H01L21/60

    CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01079 ,  H05K3/027 ,  H05K3/064 ,  H05K2201/09363 ,  H05K2201/10106 ,  H05K2203/1476 ,  Y10T29/49155 ,  H01L2924/00

    摘要： A packaging method comprises: forming a circuit board by forming a substantially continuous conductive layer on an insulating board and removing selected portions of the continuous conductive layer to define an electrically conductive trace; laser cutting the electrically conductive trace to define sub-traces electrically isolated from each other by a laser-cut gap formed by the laser cutting; and bonding a light emitting diode (LED) chip to the circuit board across or adjacent to the laser-cut gap, the bonding including operatively electrically connecting an electrode of the LED chip to one of the sub-traces without using an interposed submount. A semiconductor package comprises an LED chip flip-chip bonded to sub-traces of an electrically conductive trace of a circuit board, the sub-traces being electrically isolated from each other by a narrow gap of less than or about 100 microns.

    摘要翻译： 封装方法包括：通过在绝缘板上形成基本上连续的导电层形成电路板，并移除所述连续导电层的选定部分以限定导电迹线; 激光切割导电迹线以通过激光切割形成的激光切割间隙来彼此电隔离的子迹线; 以及将发光二极管（LED）芯片连接到所述激光切割间隙上或与所述激光切割间隙相邻的所述电路板，所述接合包括在不使用插入的基座的情况下将所述LED芯片的电极可操作地电连接到所述子迹线之一。 半导体封装包括结合到电路板的导电迹线的子迹线的LED芯片倒装芯片，子迹线通过小于或约100微米的窄间隙彼此电隔离。

    Phosphor down converting element for an LED package and fabrication method
    27.
    发明申请
    Phosphor down converting element for an LED package and fabrication method 有权
    一种LED封装的荧光降低转换元件及其制造方法

    公开(公告)号：US20090085049A1

    公开(公告)日：2009-04-02

    申请号：US11862534

    申请日：2007-09-27

    申请人： Boris Kolodin ,  Emil Vergilov Radkov

    发明人： Boris Kolodin ,  Emil Vergilov Radkov

    IPC分类号： H01L33/00 ,  B28B1/00

    CPC分类号： H01L33/501

    摘要： There is provided a phosphor down converting element based on fluoropolymer resin and a method for fabricating the same. There is further provided a method for using said phosphor down converting element to generate white light from a radiation source. The method for fabricating phosphor down converting element includes preparing an appropriate phosphor powder mixture that is capable of absorbing a first band of wavelengths and emitting a second band of wavelengths being greater in length than the first bands, incorporating the phosphor powder mixture into or on a phosphor carrier element comprising a fluoropolymer material, and molding the phosphor down converting elements into useful shapes. Fluoropolymers are the most chemically inert of all plastics, can withstand both extremely high and low temperatures, and show a resistance to weavering and UV degradation, making fluoropolymers optimal for use as a phosphor carrier.

    摘要翻译： 提供了一种基于氟聚合物树脂的磷光体下变换元件及其制造方法。 还提供了一种使用所述磷光体下变换元件从辐射源产生白光的方法。 制造磷光体下变换元件的方法包括制备适当的荧光体粉末混合物，其能够吸收波长的第一波长并且发射长度大于第一波段的波长的第二波长，将荧光体粉末混合物掺入到 荧光体载体元件包括含氟聚合物材料，并将磷光体成型为有用的形状。 含氟聚合物是所有塑料中最具化学惰性的，可以承受极高和低温，并且显示出对织造和UV降解的抵抗力，使氟聚合物最适合用作荧光体载体。

    Flip chip light emitting diode devices having thinned or removed substrates
    29.
    发明授权
    Flip chip light emitting diode devices having thinned or removed substrates 有权
    倒装芯片发光二极管器件具有减薄或移除的衬底

    公开(公告)号：US07456035B2

    公开(公告)日：2008-11-25

    申请号：US10899864

    申请日：2004-07-27

    申请人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    发明人： Ivan Eliashevich ,  Boris Kolodin ,  Emil P. Stefanov

    IPC分类号： H01L21/00

    CPC分类号： H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

    摘要翻译： 在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件管芯（10,110）。 器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。 倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112） （12,112）的底部（26,28,126）。 在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。