公开(公告)号：US20070042569A1

公开(公告)日：2007-02-22

申请号：US11206059

申请日：2005-08-18

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

公开(公告)号：US07165011B1

公开(公告)日：2007-01-16

申请号：US11217230

申请日：2005-09-01

申请人： Sanjeev Kaushal ,  Pradeep Pandey ,  Kenji Sugishima ,  Anthony Dip ,  David Smith ,  Raymond Joe ,  Sundar Gandhi

发明人： Sanjeev Kaushal ,  Pradeep Pandey ,  Kenji Sugishima ,  Anthony Dip ,  David Smith ,  Raymond Joe ,  Sundar Gandhi

IPC分类号： G06F11/30 ,  G06F15/00

CPC分类号： H01L22/10 ,  G05B23/0254 ,  H01L21/67248

摘要： A method of monitoring a thermal processing system in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers in a processing chamber in the thermal processing system; executing a real-time dynamic model to generate a predicted dynamic process response for the processing chamber during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BIST table.

摘要翻译： 一种使用内置自检（BIST）表实时监测热处理系统的方法，其包括将多个晶片定位在热处理系统中的处理室中; 执行实时动态模型以在处理时间期间为处理室生成预测的动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 以及将动态估计误差与由BIST表中的一个或多个规则建立的操作阈值进行比较。

公开(公告)号：US20120003825A1

公开(公告)日：2012-01-05

申请号：US12830210

申请日：2010-07-02

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/20

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。

公开(公告)号：US08043432B2

公开(公告)日：2011-10-25

申请号：US11673852

申请日：2007-02-12

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45551 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/68764 ,  H01L21/68771

摘要： Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.

摘要翻译： 使用原子层沉积（ALD）沉积薄膜的系统和方法。 沉积系统包括具有外围侧壁的处理室，将处理室内的处理空间分成至少第一和第二隔室的隔板，以及支撑处理空间内的基板的盘片。 盘片相对于固定的外围侧壁和隔间旋转衬底。 第一隔室接收用于在每个基板上沉积层的工艺材料。 注射加工材料的注射器通过周边侧壁与第一隔室连通。

公开(公告)号：US07994070B1

公开(公告)日：2011-08-09

申请号：US12894513

申请日：2010-09-30

申请人： Anthony Dip ,  Kimberly G Reid

发明人： Anthony Dip ,  Kimberly G Reid

IPC分类号： H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/3105

摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.

摘要翻译： 用于在基板上沉积电介质膜的方法包括将多个基板定位在处理室中，将处理室加热到400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体 进入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜 。 一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

公开(公告)号：US20110151122A1

公开(公告)日：2011-06-23

申请号：US13035049

申请日：2011-02-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US07632354B2

公开(公告)日：2009-12-15

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/455 ,  H01L21/302

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。

公开(公告)号：US07534731B2

公开(公告)日：2009-05-19

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5 ×10 12 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12 / cc的界面态密度。

公开(公告)号：US07358194B2

公开(公告)日：2008-04-15

申请号：US11206199

申请日：2005-08-18

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/28 ,  C23C16/4408 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3185

摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.

摘要翻译： 提供了用于在顺序沉积工艺中形成Si膜的方法。 该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。 其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

公开(公告)号：US20070238302A1

公开(公告)日：2007-10-11

申请号：US11393736

申请日：2006-03-31

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/67109

摘要： A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

摘要翻译： 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板，并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将衬底在第一衬底温度下暴露于含有F 2 N的第一蚀刻气体的流动以从衬底部分地去除氧化物层，从而将衬底的温度从 将第一衬底温度升至第二衬底温度，并将衬底在第二温度下暴露于含有H 2 N 2的第二蚀刻气体的流动，以进一步从衬底去除氧化物层。 在一个实施例中，可以在顺序氧化物去除工艺之后在衬底上形成膜。